• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.374-374
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• 2010

Charge transfer mechanism of poly(4,4'-aminotriphenylene hexafluoroisopropylidenediphthalimide) (TP6F PI) which exhibits bistable ON and OFF switching has been studied using photoemission electron spectroscopy (PES) and near-edge x-ray absorption fine structure (NEXAFS). Here, we demonstrate novel set-up in which holes are injected by photoemission process instead of direct charge carrier injection via metal electrode. The accumulated charges on the PI surface in the OFF state abruptly flow across the PI film when the bias voltage of a back electrode reaches a specific value, indicating that the film is changed to the ON state. Core level and x-ray absorption spectra probed at charge injection region via photoemission process do not show any evidences implying structural modification of TP6F PI during the phase change. Whereas, in valence band spectra, the highest occupied molecular orbital (HOMO) is shifted toward Fermi level, responsible for improved hole-mobility of TP6F PI of ON state.

• Journal of Pharmaceutical Investigation
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• 제25권3호
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• pp.193-204
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• 1995

In order to examine the effect of extrahepatic cholestasis induced by common bile duct ligation on the hepatic function, the pharmacokinetics of antipyrine and d-propranolol were investigated in rats. In addition, in an attempt to observe the degree of direct hepatic injury, light and electron microscopic observations and conventional pathologic test using serum were performed. Five days after common bile duct ligation, antipyrine(15 mg/kg) and d-propranolol(3 mg/kg) were intravenously administrated to the rats, respectively. The total clearances of antipyrine and d-propranolol were significantly(p<0.05) decreased. Because hepatic clearance of antipyrine poorly extracted by the liver and that of d-propranolol highly extracted by the liver are respectively dependent on the hepatic intrinsic clearance and the hepatic blood flow, it may be concluded that extrahepatic cholestasis following five days after common bile duct ligation decreased the hepatic intrinsic clearance and the hepatic blood flow. SGPT, SGOT, cholesterol, bilirubin(total bilirubin, direct bilirubin) and alkaline phosphatase were significantly increased(p<0.05). The proliferation of bile ducts was prominent, and degeneration and necrosis of hepatocytes were observed by light microscope. Also, ultrastructurally, bile canaliculi were containing the amorphous materials and losing microvilli, and SER and RER in hepatocytes were dilated and vacuolated.

• Composites Research
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• 제32권6호
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• pp.301-306
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• 2019

정전 소자는 기계적 에너지를 전기적 에너지로 바꿀 수 있는 소자로, 제작 공정이 간단하고 높은 전기적 출력을 발생시키는 장점이 부각되어 주목받고 있는 소자이다. 정전 소자가 소개된 이례 높은 출력으로 휴대형 전자기기를 충전할 수 있는 시스템이 소개되었으나, 최근 연구에서는 기체 항복과 전계 방출 현상으로 인한 출력의 한계가 보고되고 있다. 이와 같은 한계를 극복하기 위하여 본 연구에서는 금속-금속 표면 간 접촉을 활용하여 정전 소자에 이온 강화 전계 방출 현상과 전자 사태를 유도해 전자가 직접적으로 전극 사이를 흐를 수 있는 정전 소자 설계를 소개한다. 본 정전 소자의 출력은 평균 피크 개로 전압 340 V, 평균 피크 폐회로 전류 10 mA 정도로 측정되었고, 표면 전하 생성층의 표면 전하의 양에 따라 출력이 변화하였다. 본 연구에서 개발된 정전 소자는 실효 출력이 약 0.9 mW로, 기존 정전 소자에 비해 2.4배 높은 일률을 보였다. 본 정전 소자는 높은 출력을 통해 배터리, 커패시터 등을 사용하는 휴대형 전자기기 및 센서들을 독립적으로 충전시켜 유용하게 사용될 수 있을 것으로 사료된다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 추계학술대회 초록집
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• pp.47.1-47.1
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• 2011

We report on a direct measurement of two-dimensional chemical and electrical distribution on the surface of photovoltaic Cu(In,Ga)$Se_2$ thin-films using a nano-scale spectroscopic and electrical characterization, respectively. The Raman measurement reveals non-uniformed surface phonon vibration which comes from different compositional distribution and defects in the nature of polycrystalline thin-films. On the other hand, potential analysis by scanning Kelvin probe force microscopy shows a higher surface potential or a small work function on grain boundaries of the thin-films than on the grain surfaces. This demonstrates the grain boundary is positively charged and local built-in potential exist on grain boundary, which improve electron-hole separation on grain boundary. Local electrical transport measurements with scanning probe microscopy on the thin-films indicates that as external bias is increases, local current is started to flow from grain boundary and saturated over 0.3 V external bias. This accounts for carrier behavior in the vicinity of grain boundary with regard to defect states. We suggest that electron-hole separation at the grain boundary as well as chemical and electrical distribution of polycrystalline Cu(In,Ga)$Se_2$ thin-films.

• 한국연소학회지
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• 제21권3호
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• pp.1-6
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• 2016

The effect of applied electric fields on jet flow instability was investigated experimentally by varying the direct current (DC) voltage and the alternating current (AC) frequency and voltage applied to a jet nozzle. We aimed to elucidate the origin of the occurrence of twin-lifted jet flames in laminar jet flow configuration, which occur when AC electric fields are applied. The results indicate that a twin-lifted jet flames originates from cold jet instability, caused by interactions between negative ions in the jet flow via electron attachment as $O_2+e{\rightarrow}O_2{^-}$ when AC electric fields are applied. This was confirmed by experiments in which a variety of gaseous jets were ejected from a nozzle to which DC voltages and AC frequencies and voltages were applied, with ambient air between two deflection plates connected to a DC power source. Experiments in which jet flows of several gases were ejected from a nozzle and AC electric fields were applied in coflow-nitrogen provided further evidence. The flow instability occurred only for oxygen and air jets. Additionally, jet instability occurred when the applied frequency was less than 80 Hz, corresponding to the characteristic collision response time. The effect of AC electric fields on the overall structure of the jet flows is also reported. Based on these results, we propose a mechanism to reduce jet flow instability when AC electric fields are applied to the nozzle.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.387-394
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• 2013

As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

• 열처리공학회지
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• 제35권6호
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• pp.319-326
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• 2022

Direct extrusions of an aluminum 7075 alloy were carried out using 1500 ton machine with and without die cooling system. Cooling of extrusion die has been performed by the flow of liquid nitrogen and controlled by laser thermometer. Billet was 180 mm in diameter and 500 mm in length. The preheating temperatures of billet, container and die were 390℃, 400℃ and 450℃, respectively. Ram speed was kept with 1.25 mm/sec first. The change of ram speed was carried out during extrusion according to the observation of surface defects such as crack or tearing. Extrudates of 8.3 m in length, 100 mm in width and 15 mm in thickness were obtained to observe and analyze surface defects by optical microscopy and EBSD (Electron BackScattered Diffraction). In case of extrusion without die cooling cracks on the surface and tearing in the corner of extrudate occurred in the middle stage and developed in size and frequency during the late stage of extrusion. At the extrusion with die cooling the occurrence of defects could be suppressed on the most part of extrudate. EBSD micrographs showed that cracks and tearings have been resulted from the same origin. Surface defects were generated at the boundaries of grains formed by secondary recrystallization due to surface overheating during extrusion.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1153-1159
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• 2013

A novel solid-contact indium(III)-selective sensor based on bis-(1H-benzimidazole-5-methoxy-2-[(4-methoxy-3, 5-dimethyl-1-pyridinyl) 2-methyl]) thiosulfinate, known as an omeprazole dimer (OD) and a neutral ionophore, was constructed, and its performance characteristics were evaluated. The sensor was prepared by applying a membrane cocktail containing the ionophore to a graphite rod pre-coated with polyethylene dioxythiophene (PEDOT) conducting polymer as the ion-to-electron transducer. The membrane contained 3.6% OD, 2.3% oleic acid (OA) and 62% dioctyl phthalate (DOP) as the solvent mediator in PVC and produced a good potentiometric response to indium(III) ions with a Nernstian slope of 19.09 mV/decade. The constructed sensor possessed a linear concentration range from $3{\times}10^{-7}$ to $1{\times}10^{-2}$ M and a lower detection limit (LDL) of $1{\times}10^{-7}$ M indium(III) over a pH range of 4.0-7.0. It also displayed a fast response time and good selectivity for indium(III) over several other ions. The sensor can be used for longer than three months without any considerable divergence in potential. The sensor was utilized for direct and flow injection potentiometric (FIP) determination of indium(III) in alloys. The parameters that control the flow injection method were optimized. Indium(III) was quantitatively recovered, and the results agreed with those obtained using atomic absorption spectrophotometry, as confirmed by the f and t values. The sensor was also utilized as an indicator electrode for the potentiometric titration of fluoride in the presence of chloride, bromide, iodide and thiocyanate ions using indium(III) nitrate as the titrant.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• 한국추진공학회지
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• 제20권3호
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• pp.54-62
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• 2016

이단 마이크로 할로우 음극 방전(MHCD) 플라즈마를 사용하는 마이크로 플라즈마 추력기(${\mu}PT$)에 대한 실험 연구가 수행되었다. 40 sccm의 아르곤 유량과 10 W 미만의 전력으로 보다 더 직진성 있고 긴 침투 길이를 가진 배기 플룸을 만드는 정전기적 가속이 이단 MHCD에 의해 발생되었다. 전압-전류 특성에서는 이단 운전 시 두 번째 단의 가속 전압이 일정하게 되는 최적 영역이 있음을 보였다. 추정된 배기 플룸의 길이가 가속 전압으로 추산된 이론적 배출 속도와 비슷한 증가 경향을 보였다. 다중 채널을 가진 마이크로 플라즈마 추력기는 동일한 총 전력량에 대하여 단일 채널 추력기와 비슷한 특성을 보여, 이는 채널 당 허용 전력량을 낮춰 전체 전력량을 높일 수 있음을 의미한다. 아르곤 원자 분광선의 볼츠만 그래프에서 배기 플룸의 평균 전자 여기 온도는 약 2.6 eV(=약 30,170 K)임이 확인되었다.