• 제목/요약/키워드: Direct current sputtering

검색결과 81건 처리시간 0.038초

Gas-Jet-assisted Glow Discharge에서 전류, 가스 흐름 속도, 압력에 따른 영향 연구 (Current, flow rate and pressure effects in a Gas-Jet-assisted Glow Discharge source)

  • 이계호;김동수;김은희;강성식;박민춘;송혜란;김하석;김효진
    • 분석과학
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    • 제7권4호
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    • pp.483-492
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    • 1994
  • Glow Discharge를 이용한 고체 시료의 극미량 원소분석은 흡광, 방출, 형광 그리고 질량 분석 방법들이 특히 금속 시료들의 분석을 위해 많이 연구되어지고 있다. 본 연구에서는 자체 제작한 Gas-Jet-assisted Glow Discharge(GJGD)를 이용하여 각 실험변수에 따른 영향을 비교하여 보았다. 제작한 글로우 방전의 특성화 실험에 사용한 실험 변수로는 전류, 방전 가스의 흐름 속도, 압력 등이었고 시료는 황동을 사용하였다. 시료의 주원소인 구리(Cu)와 아연(Zn)의 방출선세기와 방전가스인 아르곤(Ar)의 상대적인 세기를 비교하여 보았는데, 대체적으로 전류의 증가는 튕겨나옴(Sputtering) 현상을 촉진시켜 방출선의 세기가 증가하였고 가스 흐름 속도는 플라즈마 속으로의 수송과 확산에 관여하여 증가될수록 방출선의 세기를 감소시켰다. 글로우 방전 내의 압력의 증가는 튕겨나옴 현상을 감소시킴과 더불어 시료 표면으로의 재부착을 증가시켜 방출선의 세기가 급격히 감소함을 보여 주었다.

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스퍼터링 니켈박막 연료극 적용 수소공급 저온 세라믹 연료전지의 초기작동 안정성 평가 (Evaluation of Initial Operation Stability of Hydrogen-Fueled, Low-Temperature Solid Oxide Fuel Cell with Sputtered Ni Thin-Film Anode)

  • 지상훈;김원재;한상종;장향연;박나리;김미선;강성원;임현만;정진홍;안광호;미라툴 매크피로;차석원
    • 한국수소및신에너지학회논문집
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    • 제33권6호
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    • pp.743-748
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    • 2022
  • The initial operation stability of hydrogen-fueled, solid oxide fuel cell with Ni thin-film anode fabricated by direct current sputtering was evaluated in terms of electrochemical properties such as peak power density, open circuit voltage, overpotential, and alternating current impedance at 500℃. Hydrogen and air were used as anode fuel and cathode fuel, respectively.

DC 마그네트론 스퍼트링 법으로 증착한 ZnO:Al 박막의 기판온도 영향에 따른 특성 연구 (Influence of substrate temperature on the properties of Al doped ZnO(ZnO:Al) thin films deposited by direct current magnetron sputtering)

  • Koo, Hong-Mo;Bang, Bo-Rae;Moon, Yeon-Keon;Kim, Se-Hyun;Jeong, Chang-Oh;Park, Jong-Wan
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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    • pp.149-149
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    • 2005
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양호한 유기발광소자의 광학적 특성 개선을 위한 Anode 표면특성에 관한 연구 (A study on the Optical Properties of OLED Anode by Chemical Mechanical Polishing)

  • 이우선;최권우;고필주;박주선;나한용
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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    • pp.7-9
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    • 2008
  • ITO thin film is generally fabricated by various. methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems

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고온용 서밋 태양선택흡수막의 증착 (Deposition of Cermet Solar Selective Coatings for High Temperature Applications)

  • 이길동
    • 한국태양에너지학회 논문집
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    • 제26권1호
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    • pp.57-64
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    • 2006
  • Cr-CrO cermet solar selective coatings with a double cermets layer film structure were prepared using a special direct current (dc) magnetron sputtering technology. The typical films structures from surface to bottom substrate were measured to be an $Al_2O_3$ anti-reflection layer on a double Cr-CrO cermet layer on an Al metal infrared reflection layer. Optical properties of optimized Cr-CrO cermet solar selective coating were absorptance (${\alpha}$) = 0.95 and emittance (${\varepsilon}$) = 0.10 ($100^{\circ}C$). Atomic force microscopy (AFM) image showed that Cr-CrO cermet film was very smooth and their grain size was also very small The results of thermal stability test showed that the Cr-CrO cermet solar selective coatings were stable for use at temperature of $400^{\circ}C$.

CMP 공정을 적용한 유기발광소자의 전압.전류 특성 (I-V Properties OLED by CMP Process)

  • 최권우;이우선;전영길;정판검;서용진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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    • pp.1357-1358
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    • 2006
  • Indium tin oxide (ITO) thin film is a transparent electrode, which is widely applied to solar battery, illuminators, optical switches, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting displays (OLEDs) due to its easy formation on glass substrates, goof optical transmittance, and good conductivity. ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) processis one of the suitable solutions which could solve the problems.

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Post Deposition Annealing Effect on the Structural, Electrical and Optical Properties of ZnO/Ag/ZnO Thin Films

  • Kim, Daeil
    • 열처리공학회지
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    • 제25권2호
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    • pp.85-89
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    • 2012
  • Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.

Structural and component characterization of the B4C neutron conversion layer deposited by magnetron sputtering

  • Jingtao Zhu;Yang Liu;Jianrong Zhou;Zehua Yang;Hangyu Zhu;Xiaojuan Zhou;Jinhao Tan;Mingqi Cui;Zhijia Sun
    • Nuclear Engineering and Technology
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    • 제55권9호
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    • pp.3121-3125
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    • 2023
  • Neutron conversion detectors that use 10B-enriched boron carbide are feasible alternatives to 3He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B4C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the 10B-enriched B4C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

이온빔을 이용한 마이크로/나노 가공: 형상가공 (Ion Beam Induced Micro/Nano Fabrication: Shape Fabrication)

  • 김흥배
    • 한국정밀공학회지
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    • 제24권10호
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    • pp.109-116
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    • 2007
  • Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

HIPIMS Arc-Free Reactive Deposition of Non-conductive Films Using the Applied Material ENDURA 200 mm Cluster Tool

  • Chistyakov, Roman
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.96-97
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    • 2012
  • In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

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