• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.354-354
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• 2007

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness. In this paper, we wanted see how the films properties are changed according to DC power. TiN thin films were deposited by direct current (DC) magnetron sputtering method using TiN compound target on silicon substrates. The films structural properties are examined by X-ray Diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester, nano-stress tester. Especially in DC power of 150 W, the maximum hardness and the minimum residual stress of TiN film exhibited about 25 GPa and 1 GPa, respectively. And also, the critical load of TiN film prepared by magnetron sputtering method were measured over 30 N.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.24-27
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• 2009

Indium Gallium Zinc Oxide (IGZO) thin films were deposited onto 300 nm-thick oxidized Si substrates and glass substrates by direct current (DC) magnetron sputtering of IGZO targets at room temperature. FESEM and XRD analyses indicate that non-annealed and annealed IGZO thin films exhibit an amorphous structure. To investigate the effect of an annealing treatment, the films were thermally treated at $300^{\circ}C$ for 1hr in air. The IGZO TFTs structure was a bottom-gate type in which electrodes were deposited by the DC magnetron sputtering of Ti and Au targets at room temperature. The non-annealed and annealed IGZO TFTs exhibit an $I_{on}/I_{off}$ ratio of more than $10^5$. The saturation mobility and threshold voltage of nonannealed IGZO TFTs was $4.92{\times}10^{-1}cm^2/V{\cdot}s$ and 1.46V, respectively, whereas these values for the annealed TFTs were $1.49{\times}10^{-1}cm^2/V{\cdot}$ and 15.43V, respectively. It is believed that an increase in the surface roughness after an annealing treatment degrades the quality of the device. The transmittances of the IGZO thin films were approximately 80%. These results demonstrate that IGZO thin films are suitable for use as transparent thin film transistors (TTFTs).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.103.1-103.1
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• 2017

Nanocrystalline HfN coatings were prepared by reactively sputtering Hf metal target with N2 gas using a magnetron sputtering system operated in DC and ICP (inductively coupled plasma) condition with various powers. The effects of ICP power, ranging from 0 to 200 W, on the coating microstructure, corrosion and mechanical properties were systematically investigated with FE-SEM, AFM, potentiostat and nanoindentation. The results show that ICP power has a significant influence on coating microstructure and mechanical properties of HfN coatings. With the increasing of ICP power, coating microstructure evolves from the columnar structure of DC process to a highly dense one. Average grain size and nano hardness of HfN coatings were also investigated with increasing ICP powers.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.416-419
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• 2008

In this study, we report on the characteristics of Aldoped ZnO (AZO) co-sputtered indium tin oxide (ITO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature for organic light emitting diodes (OLEDs). The electrical and optical properties of co-sputtered IAZTO electrode were critically dependent on the DC power of AZO. Furthermore, the characteristics of co-sputtered IAZTO electrode were influenced by rapid thermal annealing temperature.

• Nuclear Engineering and Technology
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• v.55 no.9
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• pp.3121-3125
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• 2023

Neutron conversion detectors that use ¹⁰B-enriched boron carbide are feasible alternatives to ³He-based detectors. We prepared boron carbide films at micron-scale thickness using direct-current magnetron sputtering. The structural characteristics of natural B₄C films, including density, roughness, crystallization, and purity, were analyzed using grazing incidence X-ray reflectivity, X-ray diffraction, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy. A beam profile test was conducted to verify the practicality of the ¹⁰B-enriched B₄C neutron conversion layer. A clear profile indicated the high quality of the neutron conversion of the boron carbide layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.249-249
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• 2015

Silver films have been of considerable interest for years due to their better performance relative to other metal films for engineering applications. A series of multi-layer silver coatings with different thickness (i.e. 0.3 um to 1.5 um) were prepared on Aluminium substrate containing copper undercoat by direct current (DC) magnetron sputtering method. For the comparative purpose, similar thickness silver coatings were prepared by electrolytic deposition method. Microstructural, morphological, and mechanical characteristics of the silver coatings were evaluated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Surface roughness test, microhardness test and nano-scratch test. From the results, it has been elucidated that the silver films prepared by DC magnetron sputtering method has superior properties in comparison to the wet coating method. On the other hand, DC magnetron sputtering method is relatively easier, faster, eco-friendly and more productive than the electrolytic deposition method that uses several kinds of hazardous chemicals for bath formulation. Therefore, a New Work Item Proposal (NWIP) for the test methods standardization of DC magnetron sputtered silver coatings has recently been proposed via KATS, Korea and a NP ballot is being progressed within a technical committee "ISO/TC107-metallic and other inorganic coating".

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.96-97
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• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• Journal of the Korean Solar Energy Society
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• v.26 no.1
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• pp.57-64
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• 2006

Cr-CrO cermet solar selective coatings with a double cermets layer film structure were prepared using a special direct current (dc) magnetron sputtering technology. The typical films structures from surface to bottom substrate were measured to be an $Al_2O_3$ anti-reflection layer on a double Cr-CrO cermet layer on an Al metal infrared reflection layer. Optical properties of optimized Cr-CrO cermet solar selective coating were absorptance (${\alpha}$) = 0.95 and emittance (${\varepsilon}$) = 0.10 ($100^{\circ}C$). Atomic force microscopy (AFM) image showed that Cr-CrO cermet film was very smooth and their grain size was also very small The results of thermal stability test showed that the Cr-CrO cermet solar selective coatings were stable for use at temperature of $400^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.2
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• pp.85-89
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• 2012

Transparent conductive ZnO/Ag/ZnO (ZAZ) multilayer films were deposited by Radio frequency (RF) magnetron sputtering and direct current (DC) magnetron sputtering. The effects of post deposition vacuum annealing temperature on the structural, electrical and optical properties of the ZAZ multilayer films were investigated. The thickness of ZAZ films is kept constant at ZnO 50 nm/Ag 5nm/ZnO 45 nm, while the vacuum annealing temperatures were varied from 200 and $400^{\circ}C$, respectively. As-deposited ZAZ films exhibit a sheet resistance of $6.1{\Omega}/{\Box}$ and optical transmittance of 72.7%. By increasing annealing temperature to $200^{\circ}C$, the resistivity decreased to as low as $5.3{\Omega}/{\Box}$ and optical transmittance also increased to as high as 82.1%. Post-deposition annealing of ZAZ multilayer films lead to considerably lower electrical resistivity and higher optical transparency, simultaneously by increased crystallization of the films.