• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.628-628
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• 2013

Graphene, a single layer of graphite, has raised extensive interest in a wide scientific community for its extraordinary thermal, mechanical, electrical and other properties [1,2]. However, because of zero-band gap of graphene, it is difficult to apply for electronic applications. To overcome this problem, chemical doping is one of way to opening grahene bandgap. According to experimental results, by changing doping concentration and doping time, it is possible to control work function of graphene. We can obtain results through raman spectroscopy, UPS, Sheet resistance. Moreover, electronic properties of doped graphene were studied by making field effect transistors. We were able to control the doping concentration, dirac point of graphene and work function of graphene by formng n-type, p-type doping materials. In this research, the chemicals of diazonium salts, viologen, etc. were used for extrinsic doping.

• Bulletin of the Korean Mathematical Society
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• v.35 no.4
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• pp.669-681
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• 1998

In this paper, we prove that on the complete Kahler manifold, if ${\rho}(x){\geq}-\frac{1}{2}{\lambda}_0$ and either ${\rho}(x_0)>-\frac{1}{2}{lambda}_0$ at some point $x_0$ or Vol(M)=${\infty}$, then the Clifford $L^2$ cohomology group $L^2{\mathcal H}^{\ast}(M,S)$ is trivial, where $\rho(x)$ is the least eigenvalue of ${\mathcal R}_x + \bar{{\mathcal R}}(x)\;and\;{\lambda}_0$ is the infimum of the spectrum of the Laplacian acting on $L^2$-functions on M.

• Progress in Medical Physics
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• v.9 no.1
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• pp.37-46
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• 1998

Beta-particle energy distributions of the radionuclides in medicine are calculated for the medical physics applications. The radial component solutions of Dirac wave equations are evaluated for a point-nucleus un screened Coulomb potential. The WKB method is employed to correct the screening due to the orbital-electron cloud. Fierz interference terms are ignored. The radionuclides considered are $\^$32/P, $\^$90/Y, $\^$131/I, $\^$166/Ho, $\^$192/Ir, $\^$198/Au, $\^$153/Sm, $\^$169/Er and $\^$188/Re. A total of 9 beta-spectra for the radionuclides, currently in domestic use or potential use in the near future, are calculated with enough accuracy and presented in graphs and tables.

• Journal of the Chungcheong Mathematical Society
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• v.31 no.4
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• pp.487-509
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• 2018

The Truncated Moment Problem (TMP) entails finding a positive Borel measure to represent all moments in a finite sequence as an integral; once the sequence admits one or more such measures, it is known that at least one of the measures must be finitely atomic with positive densities (equivalently, a linear combination of Dirac point masses with positive coefficients). On the contrary, there are more general moment problems for which we aim to find a "signed" measure to represent a sequence; that is, the measure may have some negative densities. This type of problem is referred to as the General Truncated Moment Problem (GTMP). The Jordan Decomposition Theorem states that any (signed) measure can be written as a difference of two positive measures, and hence, in the view of this theorem, we are able to apply results for TMP to study GTMP. In this note we observe differences between TMP and GTMP; for example, we cannot have an analogous to the Flat Extension Theorem for GTMP. We then present concrete solutions to lower-degree problems.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.215-215
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• 2012

본 연구에서는 화학적 도핑 방법 및 플라즈마 표면 처리방법을 이용하여 그래핀 내 Electron & Hole carrier 들의 농도를 변화시켜, 전계효과에 따른 Graphene Field Effect Transistors (GFETs) 소자의 전기적 특성 변화를 확인 하였으며, 전기적 특성 결과 중에 Dirac-point (DP) 이동에 따른 그래핀 $E_F$ (Fermi-energy) level 변화를 계산 및 유추 하였으며, Ultraviolet Photoelectron Spectroscpy (UPS)를 이용하여 실제적으로 He 소스 광전자를 그래핀 샘플 표면에 입사하여 나오는 전자들의 Kinetic Energy($E_K$) 결과를 이용하여 Work function (WF) 변화를 확인 및 검증하였다.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.270-275
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• 2013

Single-layer graphene layers have been synthesized by using chemical vapor deposition, subsequently transferred on 300 nm $SiO_2/Si$ and quartz substrates, and doped with $AuCl_3$ by spin coating for various doping concentrations ($n_D$) from 1 to 10 mM. Based on the $n_D$-dependent variations of Raman frequencies/peak-intensity ratios, sheet resistance, work function, and Dirac point, measured by structural, optical, and electrical analysis techniques, the p-type nature of graphene is shown to be strengthened with increasing $n_D$. Especially, as estimated from the drain current-gate voltage curves of graphene field effect transistors, the hole mobility is very little varied with increasing $n_D$, in strong contrast with the $n_D$-dependent large variation of electron mobility. These results suggest that $AuCl_3$ is one of the best p-type dopants for graphene and is promising for device applications of the doped graphene.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.653-653
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• 2013

In this study, ITO extended gate reduced graphene oxide field effect transistor (rGO FET) was demonstrated as a transducer for a proton sensing application. In this structure, the sensing area is isolated from the active area of the device. Therefore, it is easy to deposit or modify the sensing area without affecting on the device performance. In this case, the ITO extended gate was used as a gate electrode as well as a proton sensing material. The proton sensing properties based on the rGO FET transducer were analyzed. The rGO FET device showed a high stability in the air ambient with a TTC encapsulation layer for months. The device showed an ambipolar characteristic with the Dirac point shift with varying the pH solutions. The sensing characteristics have offered the potential for the ion sensing application.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.192-199
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• 2014

The electronic property of graphene was investigated by hydrazine treatment. Hydrazine ($N_2H_4$) highly increases electron concentrations and up-shifts Fermi level of graphene based on significant shift of Dirac point to the negative gate voltage. We have observed contact resistance and channel length dependent mobility of graphene in the back-gated device after hydrazine monohydrate treatment and continuously monitored electrical characteristics under Nitrogen or air exposure. The contact resistance increases with hydrazine-treated and subsequent Nitrogen-exposed devices and reduces down in successive Air-exposed device to the similar level of pristine one. The channel conductance curve as a function of gate voltage in hole conduction regime keeps analogous value and shape even after Nitrogen/Air exposure specially whereas, in electron conduction regime change rate of conductance along with the level of conductance with gate voltage are decreased. Hydrazine could be utilized as the highly effective donor without degradation of mobility but the stability issue to be solved for future application.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.302-302
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• 2011

The binary chalcogenide semiconductor Bi2Se3 is at the center of intensive research on a new state of matter known as topological insulators. It has Dirac point in their band structures with robust surface states that are protected against external perturbations by strong spin-orbit coupling with broken inversion symmetry. Such unique band configurations were confirmed by recent angle-resolved photoelectron emission spectroscopy experiments with an unwanted n-type doping effect, showing a Fermi level shift of about 0.3 eV caused by atomic defects such as Se vacancies. Since the number of defects can be reduced using the molecular beam epitaxy (MBE) method. We have prepared the Bi2Se3 film on noble metal Au(111) and semiconductor Si(111) substrates by MBE method. To characterize the film, we have introduced several surface sensitive techniques including x-ray photoemission electron spectroscopy (XPS) and micro Raman spectroscopy. Also, crystallinity of the film has been confirmed by x-ray diffraction (XRD). Using home-built scanning tunneling microscope, we observed the atomic structure of quintuple layered Bi2Se3 film on Au(111).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.473-473
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• 2013

전자종이, 입을 수 있는 디스플레이, 플렉서블 터치 스크린, 투과성 면 등과 같은 차세대 플렉서블 투명 전자소자는 기계적으로 유연하고 광학적으로 투명하며 무게가 가벼운 특성을 지녀야 할 것으로 예상된다. 현재까지는Indium tin oxide (ITO), zinc tin oxide (ZTO), carbon nano tube (CNT)와 polyimide 계열의 물질들이flexible, wearable, and transparent electronics (FWTEs) 소자의 electrode, active channel, dielectric layers로 제안되어 활발히 연구되었다. 최근에는 높은 이동도(~200,000 cm2/Vs) 및 유연성(fracture strain of 30%), 투명도 (97.5% for monolayer)와 같은 특성을 갖는 그래핀에 대한 연구가 활발히 진행되고 있다. 그러나 그래핀을 차세대 플렉서블 투명 전자소자 구현에 적용하기 위해서는 플렉서블하고 투명한 절연체의 확보 및 그래핀의 진성(intrinsic) 특성 유지 등과 같은 문제점들을 해결해야 한다. 따라서, 본 연구팀에서는 그래핀 기반 플렉서블 투명 전자소자의 게이트 절연층으로 적합한 poly-4-vinylphenol/poly (melamineco-formaldehyde) (PVP/PMF) 물질을 제시하고 이에 대한 전기적 재료적 분석을 수행하였다. 특히 다양한 PVP와 PMF의 비율 및 가열(annealing 혹은 curing) 온도에서 형성된 PVP/PMF 층의 화학 및 전기적 특성을 FT-IR, I-V, 그리고 C-V 측정을 통해 확인하였다. PVP/PMF는 유기절연 물질의 하나로서 높은 유연성과 투명도를 갖고 있을 뿐만 아니라 그래핀에 적용 시 그래핀의 진성 특성을 확보할 수 있다. 이는 PVP/PMF에 존재하는 hydroxyl (-OH) 그룹과 그래핀 상에서 정공(hole)을 공급하는 것으로 알려져 있는 -OH 그룹들간의 cross-linking 메커니즘에 의한 것으로 예상된다. 마지막으로 최적화된 PVP/PMF (낮은 hysteresis 전압)를 게이트 절연층에 적용하여 polyethylene terephthalate (PET) 기판 및 연구원의 손가락 위에 95.8%의 투명도 및 0에 가까운 Dirac point를 갖는 그래핀 기반 플렉서블 투명 전자소자를 성공적으로 집적하였다.