• Proceedings of the KIEE Conference
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• 1998.07a
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• pp.122-124
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• 1998

The inverter circuit of brushless do moter(BLDCM) needs feedback diodes to protect the switching element from counterelectromotive force. In this paper, we describe the computational method of characteristic analysis of BLDCM with feedback diodes by using the FEM.

• 전기의세계
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• v.31 no.3
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• pp.218-225
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• 1982

Metal-Oxide-Metal thin film diodes have been fabricated on the glass substrates by conventional vacuum evaporation method, and the electrical properties, primarily current-voltage characteristics of diodes, have been discussed in the light of various conduction theories presented so far. The experimental results were ploted in the different figures according to the assumed theory, and the characteristic coefficients peculior to these theories were estimated from the function dependence of current (I) upon voltage (V), temperature (T) and oxide film thickness (d).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.12
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• pp.101-108
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• 2013

This paper presents A Zero-Voltage-Switching(ZVS) Three-Level DC/DC Converter using Primary Clamping Diodes. The Previous ZVS Three-Level DC/DC converter realizes ZVS for the switches with the use of the leakage inductance(or external resonant inductance) and the output capacitors of the switches, however the rectifier diodes suffer from recovery which results in oscillation and voltage spike. In order to solve this problem, this paper proposes a novel ZVS Three-Level DC/DC converter, which introduces two clamping diodes to the basic Three-Level converter to eliminate the oscillation and clamp the rectified voltage to the reflected input voltage.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.387-388
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• 2008

In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of $50\;{\mu}m$, the maximum capacitance of the fabricated varactor diode was 2.1 pF and the minimum capacitance 0.44 pF. Therefore, the $C_{max}/C_{min}$ ratio was 4.77. Also, for the anode contact diameter of $60\;{\mu}m$, the maximum and minimum capacitances were 2.9 and 0.62 pF, respectively. And, thus, the $C_{max}/C_{min}$ ratio was 4.64.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.774-779
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• 1988

The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.28-36
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• 1998

Widely tunable diodes integrated with periodically sampled and chirped DBR(distributed Bragg reflector) and an EA(electroabsorption) modulator are analyzed dynamically using the improved largesinal time-domain model. The tuning characteristics of sampled- and chirped-grating DBR laser diodes are demonstrated theoretically. The results of the simulation agree well with those of the experiment. And the intensity-modulation properties of the laser diodes integrated with an EA modulator are calculated. It is shown that the external modulation has the lower frequency chirp by 1/20 for the same extinction ratio than the direct modulation, and also the short pulse train can be generated using the optical gating of an EA modulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.1038-1042
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• 2005

We have investigated dielectric properties depending on bias voltage in organic light-emitting diodes using 8-hydroxyquinoline aluminum $(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using impedance of characteristics. Impedance characteristics was measured complex impedance Z and phase $\theta$ in the frequency range of 40 Hz to $10^8$ Hz. We obtained complex electrical conductivity, dielectric constant, and loss tangent $(tan\delta)$ of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.973-979
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• 1995

The input equivalent noise charge (ENC) of hydrogenated amorphous silicon radiation detector diodes was measured and analyzed. The noise sources of amorphous silicon diodes were analyzed into three sources; shot noise, flicker noise and thermal noise from the contact resistance. By comparing the measured ENC with the calculated signal charge in uniform generation case, the signal-to-noise ratio (S/N) for the sample diodes is estimated as a function of the detector bias and the shaping time of Gaussian pulse shaper. The maximum S/N occurred at the bias level just above the full depletion voltage for shaping time of 2∼3 ${\mu}$sec. The developed method is useful in optimum design or amorphous silicon p-i-n diodes for charged particulate radiation spectroscopy.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.173-176
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• 2003

We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using static spin-casting method. Two device structures were made; one is ITO/TPD/Alq3/Al as a reference and the other is ITO/PVK/TPD/Alq3/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics, luminance-voltage characteristics and luminous efficiency were measured with a variation of spin-casting speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

• Journal of the Korean Ceramic Society
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• v.54 no.6
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• pp.449-469
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• 2017

The development of quantum dots (QDs) has had a significant impact on various applications, such as solar cells, field-effect transistors, and light-emitting diodes (LEDs). Through successful engineering of the core/shell heterostructure of QDs, their photoluminescence (PL) quantum yield (QY) and stability have been dramatically enhanced. Such high-quality QDs have been regarded as key fluorescent materials in realizing next-generation display devices. Particularly, electrically driven (or electroluminescent, EL) QD light-emitting diodes (QLED) have been highlighted as an alternative to organic light-emitting diodes (OLED), mostly owing to their unbeatably high color purity. Structural optimizations in QD material as well as QLED architecture have led to substantial improvements of device performance, especially during the past decade. In this review article, we discuss QDs with various semiconductor compositions and describe the mechanisms behind the operation of QDs and QLEDs and the primary strategies for improving their PL and EL performances.