• 한국기계가공학회지
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• 제21권2호
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• pp.11-22
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• 2022

This paper presents the development process for a high-power diode laser for metal surface hardening. To combine the emissions from several laser bars, it is necessary to collimate the emitted light using an optical lens. Thus, to achieve a suitable power density and uniform beam profile, several optical layouts were proposed. To estimate the laser beam for a flat-top distribution, a numerical analysis was performed using the ZEMAX software, and the results were compared with the experimental results. With a focal lens assembled in a serial diode stack source, the design can utilize the advantage of compacting the overall beam size. Experimental results for a robotic system demonstrated the processing ability of this diode laser module in industrial laser hardening.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2005년도 전력전자학술대회 논문집
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• pp.507-510
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• 2005

High voltage pulse power supply using Marx generator and solid-state switches is proposed in this study. The Marx generator is composed of 12 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. To charge the capacitors of each stage in parallel, inductive charging method is used and this method results in high efficiency and high repetition rates. It can generate the pulse voltage with the following parameters: Voltage: up to 120kv Rising time: sub ${\mu}S$ Pulse width: up to $10{\mu}S$, Pulse repetition rate: 1000pps The proposed pulsed power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental results are included to verify the system performances in this paper.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.612-615
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• 2004

A high-voltage generator is used to program the anti-fuse of the semiconductor chip. A new high-voltage generator consists of PN diodes and new stack type capacitors. An oscillator supply pulses to the high-voltage generator. The pulse period of the oscillator is delayed by controlling gate-voltage of the MOS. The pulse period is about 27ns, therefore the pulse frequency is about 37MHz. The threshold voltage of PN diode is about 0.8V. The capacitance of new stack type capacitor is about 4pF. The output voltage of the new high-voltage generator is about 7.9V and its current capacity is about $488{\mu}$A.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문집
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• pp.1000-1003
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• 2002

For high density optical storage, there should be a high NA objective lens and a shorter wavelength laser diode. To secure the disc tilt margin related to the coma aberration, moreover, it's difficult to apply the tilt compensation mechanism into the portable PC. In this paper, we proposed the 3-axis asymmetry pickup actuator with high efficiency symmetric magnetic circuit, which consisted of the top cover type inner yoke for high magnetic flux density, the coil stack unit for the 3-axis independent operation and vertically polarized magnets. This newly suggested actuator features DVD-RAM recording, we achieved the high focus & track AC sensitivity and the greatly stabilized system.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문초록집
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• pp.397.1-397
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• 2002

For high density optical storage, there should be a high NA objective lens and a shorter wavelength laser diode. To secure the disc tilt margin related to the coma aberration, moreover, it's difficult to apply the tilt compensation mechanism into the portable PC. In this paper, we proposed the 3-axis asymmetry pickup actuator with high efficiency symmetric magnetic circuit, which consisted of the top cover type inner yoke for high magnetic flux density, the coil stack unit for the 3-axis independent operation and vertically polarized magnets. (omitted)

• 조명전기설비학회논문지
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• 제23권8호
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• pp.48-56
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• 2009

본 논문은 연료전지스택을 입력전원으로 하는 TIG-용접기용 전력변환장치를 제안하였다. 일반적으로 TIG-용접기의 전원공급장치는 상용전원을 이용한 다이오드 브리지 정류회로를 사용한다. 이런 회로의 경우 다이오드 정류기와 용량이 큰 캐패시터를 사용하게 되므로 부피가 커지고, 입력전류는 맥동성분과 고조파를 포함하게 된다. 또한, TIG-용접기는 상용전원의 사용이 여의치 않은 도서산간지역이나 특수한 환경에서는 소형 경량의 이동성이 수월한 전원장치 및 전력원을 필요로 하게 된다. 따라서 본 논문의 TIG-용접기용 전력변환장치는 고체고분자형연료전지(PEMFC)를 입력전원으로 사용하고, 부스트 컨버터의 기능과 인버터 용접전원의 기능을 하나의 풀-브리지 컨버터로 구성하였다. 제안한 연료전지를 이용한 TIG-용접기용 전력변환장치는 컴퓨터 시뮬레이션과 실험을 통하여 성능을 검증하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1868-1870
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• 2000

As a drive for an ETC (Electro-thermal Chemical) launcher, a large pulse power system of a 2.4MJ energy storage was designed, constructed and tested. The overall power system consists of eight capacitive 300kJ energy storage banks. In this paper we describe the design features, setup and operation test result of the 300kJ pulsed power module. Each capacitor bank of the 300kJ module consists of six 22kV 50kJ capacitors. A triggered vacuum switch (TVS-43) was adopted as the main pulse switch. Crowbar diode circuits, variable multi-tap inductors and energy dumping systems are connected to each high power capacitor bank via bus-bars and coaxial cables. A parallel crowbar diode stack is fabricated in coaxial structure with two series 13.5kV, 60kA avalanche diodes. The main design parameters of the 300kJ module are a maximum current of 180kA and a pulse width of 0.5 - 3ms. The electrical performances of each component and current output variations into resistive loads have been investigated.

• 한국정보통신학회논문지
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• 제11권10호
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• pp.1899-1909
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• 2007

본 논문에서는 TFT-LCD 구동 IC 모듈의 소형화 측면에서 유리한 DC-DC 변환기 회로인 펌핑 커패시터 내장형 크로스-커플드 전하펌프(Cross-Coupled Charge Pump with Internal Pumping Capacitor) 회로가 새롭게 제안되었다. VGH 및 VGL 전하펌프 각각의 입력단과 전하 펌핑 노드를 연결하는 NMOS 및 PMOS 다이오드를 두어, 초기 동작 시 전하 펌핑 노드를 서로 같은 값으로 프리차지하여 대칭 적으로 전하 펌핑을 하도록 하였다. 그리고 첫 번째 전하 펌프의 구조를 다르게 설계하여 펌핑된 전하가 입력단으로 역류되는 현상을 방지하였다. 또한, 펌핑 클럭 구동 드라이버의 위치를 펌핑 커패시터 바로 앞에 두어 기생 저항으로 인한 펌핑 클럭 라인의 전압강하를 방지하여 구동능력을 향상 시켰다. 마지막으로 내장형 펌핑 커패시터를 Stack-MIM 커패시터를 사용하여 기존의 크로스-커플드 전하펌프 보다 레이아웃 면적을 최소화하였다. 제안된 TFT-LCD 구동 IC 용 전하펌프 회로를 $0.13{\mu}m$ Triple-Well DDI 공정을 사용하여 설계하고, 테스트 칩을 제작하여 검증하였다.

• 조명전기설비학회논문지
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• 제26권9호
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• pp.47-56
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• 2012

This research is to develop satiable battery charger with a variety of capacity and voltage specifications of battery. For this, voltage or current were controlled through buck converter which is DC voltage that already received three-phase at primary side and passed bridge rectifier diode. And, it was comprised of full-bridge converter and HFTR for insulation and a square wave AC. The transformer primary side was comprised in series to divide certain charging current and the secondly side was comprised of 6 fixed transformers so that they can generate certain amount of power and various output voltage through relay parallel compound 6 DC Link outputs. To confirm such structure's verification and validity, simulation with PSIM was conducted, and validity of proposed variable charger system was verified through 3kW stack production.

• 전자공학회논문지A
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• 제30A권10호
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.