• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.2
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• pp.11-22
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• 2022

This paper presents the development process for a high-power diode laser for metal surface hardening. To combine the emissions from several laser bars, it is necessary to collimate the emitted light using an optical lens. Thus, to achieve a suitable power density and uniform beam profile, several optical layouts were proposed. To estimate the laser beam for a flat-top distribution, a numerical analysis was performed using the ZEMAX software, and the results were compared with the experimental results. With a focal lens assembled in a serial diode stack source, the design can utilize the advantage of compacting the overall beam size. Experimental results for a robotic system demonstrated the processing ability of this diode laser module in industrial laser hardening.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.507-510
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• 2005

High voltage pulse power supply using Marx generator and solid-state switches is proposed in this study. The Marx generator is composed of 12 stages and each stage is made of IGBT stack, two diode stacks, and capacitor. To charge the capacitors of each stage in parallel, inductive charging method is used and this method results in high efficiency and high repetition rates. It can generate the pulse voltage with the following parameters: Voltage: up to 120kv Rising time: sub ${\mu}S$ Pulse width: up to $10{\mu}S$, Pulse repetition rate: 1000pps The proposed pulsed power generator uses IGBT stack with a simple driver and has modular design. So this system structure gives compactness and easiness to implement total system. Some experimental results are included to verify the system performances in this paper.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.612-615
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• 2004

A high-voltage generator is used to program the anti-fuse of the semiconductor chip. A new high-voltage generator consists of PN diodes and new stack type capacitors. An oscillator supply pulses to the high-voltage generator. The pulse period of the oscillator is delayed by controlling gate-voltage of the MOS. The pulse period is about 27ns, therefore the pulse frequency is about 37MHz. The threshold voltage of PN diode is about 0.8V. The capacitance of new stack type capacitor is about 4pF. The output voltage of the new high-voltage generator is about 7.9V and its current capacity is about $488{\mu}$A.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11b
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• pp.1000-1003
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• 2002

For high density optical storage, there should be a high NA objective lens and a shorter wavelength laser diode. To secure the disc tilt margin related to the coma aberration, moreover, it's difficult to apply the tilt compensation mechanism into the portable PC. In this paper, we proposed the 3-axis asymmetry pickup actuator with high efficiency symmetric magnetic circuit, which consisted of the top cover type inner yoke for high magnetic flux density, the coil stack unit for the 3-axis independent operation and vertically polarized magnets. This newly suggested actuator features DVD-RAM recording, we achieved the high focus & track AC sensitivity and the greatly stabilized system.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11a
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• pp.397.1-397
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• 2002

For high density optical storage, there should be a high NA objective lens and a shorter wavelength laser diode. To secure the disc tilt margin related to the coma aberration, moreover, it's difficult to apply the tilt compensation mechanism into the portable PC. In this paper, we proposed the 3-axis asymmetry pickup actuator with high efficiency symmetric magnetic circuit, which consisted of the top cover type inner yoke for high magnetic flux density, the coil stack unit for the 3-axis independent operation and vertically polarized magnets. (omitted)

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.8
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• pp.48-56
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• 2009

This paper presents the power conversion system for TIG-welder using the fuel cell stack Generally, power supply for TIG-welder uses the front-ended diode bridge rectifier by common AC power source. In this case, power supply of TIG-welder increases in volume because of using bulky capacitor and diode-rectifier. Also, input current includes ripple and harmonics. Moreover, TIG-welder will be demand the power supply with lightweight and easy movement in the areas like as the islands and mountainous areas or the special environment are not use common AC power source. Thus, input power of the power conversion system for TIG-welder is used PEMFC(Polymer Electrolyte Membrane Fuel Cell), and the power conversion system is comprised of full-bridge converter with function of boost converter and inverter welding source, in this paper. The proposed power conversion system which is power supply for TIG-welder was verified by computer simulations and experiments.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1868-1870
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• 2000

As a drive for an ETC (Electro-thermal Chemical) launcher, a large pulse power system of a 2.4MJ energy storage was designed, constructed and tested. The overall power system consists of eight capacitive 300kJ energy storage banks. In this paper we describe the design features, setup and operation test result of the 300kJ pulsed power module. Each capacitor bank of the 300kJ module consists of six 22kV 50kJ capacitors. A triggered vacuum switch (TVS-43) was adopted as the main pulse switch. Crowbar diode circuits, variable multi-tap inductors and energy dumping systems are connected to each high power capacitor bank via bus-bars and coaxial cables. A parallel crowbar diode stack is fabricated in coaxial structure with two series 13.5kV, 60kA avalanche diodes. The main design parameters of the 300kJ module are a maximum current of 180kA and a pulse width of 0.5 - 3ms. The electrical performances of each component and current output variations into resistive loads have been investigated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.10
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• pp.1899-1909
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• 2007

A cross-coupled charge pump with internal pumping capacitor, witch is advantages from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using a NMOS and a PMOS diode connected to boosting node from VIN node, the pumping node is precharged to the same value each pumping node at start pumping operation. Since the lust-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located the font side of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with conventional cross-coupled charge pump by using a stack-MIM capacitors. A proposed charge pump for TFT-LCD driver IC is designed with $0.13{\mu}m$ triple-well DDI process, fabricated, and tested.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.9
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• pp.47-56
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• 2012

This research is to develop satiable battery charger with a variety of capacity and voltage specifications of battery. For this, voltage or current were controlled through buck converter which is DC voltage that already received three-phase at primary side and passed bridge rectifier diode. And, it was comprised of full-bridge converter and HFTR for insulation and a square wave AC. The transformer primary side was comprised in series to divide certain charging current and the secondly side was comprised of 6 fixed transformers so that they can generate certain amount of power and various output voltage through relay parallel compound 6 DC Link outputs. To confirm such structure's verification and validity, simulation with PSIM was conducted, and validity of proposed variable charger system was verified through 3kW stack production.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.33-40
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• 1993

A reflection type 16x8 S-SEED array from LP(Low Pressure)-MODVD-grown GaAs/AlGaAs extremely shallow quantum well(ESQW) structures, with 4% Al fraction, has been fabricated. Its intrinsic region consists of 50 pairs of alternating 100.angs. GaAs and 100.angs. $Al_{0.04}$Ga$_{0.96}$As layers. A multilayer reflector stack of $Al_{0.04}$/Ga$_{0.96}$ As(599$\AA$)/AlAs(723$\AA$) was incorporated for the reflection plane below the p-i-n structures. The device processing after the MOCVD growth includes the mesa etching, isolation etching, insulator deposition, p & n metallization, and AR(Anti-Reflection) coating. For switching characteristics of the S-SEED in the form of p-i-n ESQW diode, the maximum optical negative resistance was observed at 856nm. Reflectance measurements showed a change from 15.6% to 43.3% for +0.9V to -6V bias. The maximum contrast ration of the S-SEED array was 2.0 and all the 128 devices showed optical bistability with contrast ratios over 2.4 at 5V reverse bias.