• Journal of the Korea Institute of Military Science and Technology
• /
• v.12 no.5
• /
• pp.644-651
• /
• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.7
• /
• pp.734-740
• /
• 2003

In this paper, A Vector Modulator based a wideband analog phase shifter is realized with four P-I-N diode attenuators, an asymmetric coupled line coupler, a symmetric coupled line coupler, and a power combiner. Simple configuration to have advantages in cost, size, power, and the number of passive circuits is presented. The phase variation due to phase and amplitude error of a P-I-N diode attenuator is derived and used to optimize the overall circuit. The phase shifter shows a total phase shift of 360$^{\circ}$, a 8.2$^{\circ}$maximum phase error, and a 16${\pm}$2.5 dB insertion loss over the wide frequency range of 1 GHz to 3 GHz.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.6
• /
• pp.45-52
• /
• 1994

A microwave PIN diode 4-bit phase shifter is designed in X-band. A loaded-line type is used for the 22.5$^{\circ}$ and 45$^{\circ}$ bits, and a switched-line type for the 90$^{\circ}$and 180$^{\circ}$bits. The measured results show that the phase error and average insertion loss are less than $\pm$5.4$^{\circ}$and 7.2dB, respectively, over a 9.75~10.25GHz frequency band.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.6 no.2
• /
• pp.3-10
• /
• 1995

In this paper, the phase shifter using the p-i-n diode is designed and analyze. The large phase shift can be achieved by the swithched-line and the hybrid branch line phase shifter, however the small phase shift can be achieved by the loaded-line phase shifter, according to the bias state of the p-i-n niode. The results of the experiment agree with those of computer simulation at the center frequency.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.23 no.2
• /
• pp.182-188
• /
• 1986

A method of wideband constant phase control is proposed. This can be applied to reflection type phase shifter with p-i-n diode. Using the proposed method, a microwave phase network which consists of a transmission line and reactive circuit element is suggested. By determining theproper values of design parameters, the desired wideband constant phase with different specification can easily be designed. Also, using the proposed method, the parameters variation, and 1.1 dB of insertion loss in the range of 12% bandwidth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.2
• /
• pp.123-129
• /
• 2002

5-bit broadband MMIC phase shifter has been designed and fabricated. For the broadband performance, 11.25$^{\circ}$, 22.5$^{\circ}$, 45$^{\circ}$ and 90$^{\circ}$ bit have been designed with Lange coupler and 180$^{\circ}$ bit has been implemented by using shorted coupled line with Lange coupler and $\pi$-network of transmission line. Due to Lange coupler with large size, the Lange couplers have been folded far circuit size reduction. Low loss PIN diode has been utilized as a switch for each bit. Fabricated 5-bit broadband phase shifter shows the measured results that RMS phase error of 5 major phases is 3.5$^{\circ}$, maximum insertion loss is 12.5 dB, and maximum input and output return loss are 7 dB and 10 dB, respectively. The size of fabricated phase shifter is 6.5$\times$5.3 $ extrm{mm}^2$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.5
• /
• pp.521-526
• /
• 2003

This paper describes performance data and design information on a reflection-type analog phase shifter used in Ka-band. Arranging a couple of GaAs hyperabrupt junction varactor diode parallel in a circuit, and applying reactance matching method accordingly, it is possible to 831 a large the phase shift. Design equation is formulated theoretically. Since the assembly process is important in Ka-band, this paper also includes the assembly process that is essential to minimize the generation of parasitic elements during the assembly process. It is obtained variable phase shift 220$^{\circ}$${\pm}$7$^{\circ}$ and insertion loss 5 dB${\pm}$1 dB as a measured result larger than the existing figure in Ka-band.

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1984.10a
• /
• pp.19-21
• /
• 1984

A design of digital loaded-line phase shifter circuits with PIN Diode is presented. A computer program showes that any phase difference which is satisfied with the condition of minimun VSWR can be obtained with variable stub length and spacing between stubs. A 30 phase bit is designed and measured at 3Gh. Experimental and theoretical performance are compared and found to be in good agreement.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.22 no.1
• /
• pp.114-124
• /
• 2011

In this paper, we present a 2 GHz compact analog phase shifter with linear phase-tune characteristic. The compact phase shifter was designed base on a lumped all pass network and implemented using a ceramic substrate fabricated with thin-film technique. For a linear phase-tune characteristic, a capacitance of the varactor diode for a tuning voltage was linearized by connecting series capacitor and subsequently produced an almost linear capacitance change. The inductor and bias circuit in the all pass network was implemented using a spiral inductors for small size, which results in the size reduction to $4\;mm{\times}4\;mm$. In order to measure the phase shifter using the probe station, two CPW pads are included at the input and output. The fabricated phase shifter showed an insertion loss of about 4.2~4.7 dB at 2 GHz band and a total $79^{\circ}$ phase change for DC control voltage from 0 to 5 V, and showed linear phase-tune characteristic as expected in the design.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.9
• /
• pp.392-397
• /
• 2003

Reflection type phase shifter with Lange coupler is widely used as a circuit topology to obtain phase shift in broadband operation. The phase shift of 33.75$^{\circ}$ at this type is achieved by simultaneously turning on both 11.25$^{\circ}$ and 22.5$^{\circ}$ . In order to improve the phase accuracy of 33.75$^{\circ}$, this paper proposes the additional circuit which is composed of a GaAs PIN diode and a reactive load. By utilizing MMIC technology. Over the 2-6 GHz band, the measured result of phase difference between the previous circuit and the proposed circuit shows average 4.7$^{\circ}$ on the basis of 33.75$^{\circ}$. Insertion loss and return loss are invariant in comparison with the previous circuit.