• Title/Summary/Keyword: Diode

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The Characteristic of the Performance of the Bypass Diode with Composition Change of the String in Si-PV Module (결정질 PV 모듈의 string 구성에 따른 바이패스 다이오드 동작 특성)

  • Ji, Yang-Geun;Kong, Ji-Hyun;Kang, Gi-Hwan;Yu, Gwon-Jong;Ahn, Hyung-Gun;Han, Deuk-Young
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.12
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    • pp.2212-2217
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    • 2010
  • Previous studies have been focused on the voltage of Bypass diode and Isc(Short Circuit Current) of the influenced solar cell. The Bypass diode starts working when it gets the reverse applied voltage. Previous studies have only concentrated on Isc of the influenced solar cell and Imp of PV module to explain the bypassing performance. PV module is usually working together with inverter having MPPT(Maximum Power Point Tracking) function for best performance. bypassing point is regulated by MPPT function of inverter. In this paper, simulation results of Bypass diode in PV module have been analyzed to represent the relationship of the bypassing point with the composition of PV module. From the results, the more cells are connected with each string, the earlier bypassing performance happens under the fixed number of strings. As diode groups increase or irradiation decreases, the bypassing performance starts fast.

Comparison of Conventional DC-DC Converter and a Family of Diode-Assisted DC-DC Converter in Renewable Energy Applications

  • Zhang, Yan;Liu, Jinjun;Ma, Xiaolong;Feng, Junjie
    • Journal of Power Electronics
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    • v.14 no.2
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    • pp.203-216
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    • 2014
  • In the conventional dc-dc converter, a pair of additional diode and the adjacent passive component capacitor/inductor can be added to the circuit with an X-shape connection, which generates a family of new topologies. The novel circuits, also called diode-assisted dc-dc converter, enhance the voltage boost/buck capability and have a great potential for high step-up/step-down power conversions. This paper mainly investigates and compares conventional dc-dc converter and diode-assisted dc-dc converter in wide range power conversion from the aspects of silicon devices, passive components requirements, electro-magnetic interference (EMI) and efficiency. Then, a comprehensive comparison example of a high step-up power conversion system was carried out. The two kinds of boost dc-dc converters operate under the same operation conditions. Mathematical analysis and experiment results verify that diode-assisted dc-dc converters are very promising for simultaneous high efficiency and high step-up/step-down power conversion in distributed power supply systems.

High Performance W-band VCO for FMCW Applications (FMCW 응용을 위한 우수한 성능의 W-band 도파관 전압조정발진기)

  • Ryu, Keun-Kwan;Rhee, Jin-Koo;Kim, Sung-Cha
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37 no.4A
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    • pp.214-218
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    • 2012
  • In this paper, we reported on a high performance waveguide VCO(voltage controlled oscillator) for FMCW applications. The waveguide VCO consists of a GaAs Gunn diode, a varactor diode, and two bias posts with low pass filter(LPF). The cavity is designed for fundamental mode at 47 GHz and operated at second harmonic of 94 GHz center frequency. The developed waveguide VCO has 1.095 GHz bandwidth, 590 MHz linearity with 1.69% and output power from 14.86 to 15.93 dBm. The phase noise is under -95 dBc/Hz at 1 MHz offset.

Clamping-diode Circuit for Marine Controlled-source Electromagnetic Transmitters

  • Song, Hongxi;Zhang, Yiming;Gao, Junxia;Zhang, Yu;Feng, Xinyue
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.395-406
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    • 2018
  • Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.

Development of Photo-diode for LOC fluorescence detector (LOC 형광검출 소자를 위한 광 다이오드의 제작 및 특성 평가)

  • Kim, Ju-Hwan;Shin, Kyeong-Sik;Kim, Yong-Kook;Kim, Sang-Sik;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.04a
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    • pp.100-103
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    • 2003
  • Signal detection technologies such as fluorescence, charge and electrochemical detection used in the monolithic capillary electrophoresis system to convert the biochemical reaction into the electrical signal. The fluorescence detection using photodiodes that measure fluorescence emitted from eluting molecules is widely used for the monolithic capillary electrophoresis system. In this paper, in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive$(4k{\Omega}{\cdot}cm)$ wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571{\Omega}$ to $393{\Omega}$.

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The Concentration Measurements of Toxic Exhaust Gas by Tunable Diode Laser Absorption Spectroscopy System (TDLAS 시스템을 이용한 유해 배기가스의 농도 계측)

  • Cha, Hak-Joo;Kim, Min-Soo;Shin, Myung-Chul;Kim, Se-Won;Chun, Kwang-Min
    • Proceedings of the KSME Conference
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    • 2003.11a
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    • pp.222-227
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    • 2003
  • Recent advances in room-temperature, visible and near-IR diode laser sources for telecommunication, optical data storage applications are enabling combustion diagnostics system based on diode laser absorption spectroscopy. In contrast to some traditional sampling-based gas-sensing instruments, tunable diode laser absorption spectroscopy system is advantageous because of their non-invasive nature, high sensitivity, fast response time and real-time measurement capability. So, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor system arc now appearing for a variety of applications. The objective of this research is to take advantage of distributed feed-back diode laser and measure the $CO_{2}$ concentration (by using direct absorption and wavelength modulation spectroscopy methods). In addition to survey spectra of $CO_{2}$ bands and spectroscopic parameters between 1565 and 1579 run were computed at temperatures between 296 and 1200 K (by using HITRAN 2000 database). It experimentally found out that the features of direct absorption and wavelength modulation spectroscopy methods.

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Development of the 4th Generation CD Optical Pick-up with Small Thickness (4세대 박형 CD 광학 픽업 개발)

  • 최영석;김성근
    • Journal of the Korean Society for Precision Engineering
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    • v.15 no.3
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    • pp.38-49
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    • 1998
  • The 3rd generation optical pick-up used popularly in resent years is composed of many optical and electronic components such as laser diode, photo diode, beam splitter, objective lens, grating lens, concave lens, collimator lens etc. Therefore, the design of its optical system and its main base which the said optical and electronic components are set on, is complicated and needs high precision. Its assembly and adjustment in the production line is also difficult. This complication and the demand of high precision get its production cost to be high and its reliability to be low. In this paper, the 4th generation optical pick-up is designed and developed, with the hologram device which laser diode. photo diode, beam splitter. and grating lens are integrated in. This optical pick-up reduces the number of points of adjustment by 3, compared with the 3rd generation optical pick-up of which the number of points of adjustment is 6. This optical pickup also decreases by 4 the number of points of W bonding to have bad influence on environmental reliability, decreases by about 10 the number of parts, and establishes about 20% cost-down of material cost, compared with the 3rd generation optical pick-up.

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Novel Punch-through Diode Triggered SCR for Low Voltage ESD Protection Applications

  • Bouangeune, Daoheung;Vilathong, Sengchanh;Cho, Deok-Ho;Shim, Kyu-Hwan;Leem, See-Jong;Choi, Chel-Jong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.797-801
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    • 2014
  • This research presented the concept of employing the punch-through diode triggered SCRs (PTTSCR) for low voltage ESD applications such as transient voltage suppression (TVS) devices. In order to demonstrate the better electrical properties, various traditional ESD protection devices, including a silicon controlled rectifier (SCR) and Zener diode, were simulated and analyzed by using the TCAD simulation software. The simulation result demonstrates that the novel PTTSCR device has better performance in responding to ESD properties, including DC dynamic resistance and capacitance, compared to SCR and Zener diode. Furthermore, the proposed PTTSCR device has a low reverse leakage current that is below $10^{-12}$ A, a low capacitance of $0.07fF/mm^2$, and low triggering voltage of 8.5 V at $5.6{\times}10^{-5}$ A. The typical properties couple with the holding voltage of 4.8 V, while the novel PTTSCR device is compatible for protecting the low voltage, high speed ESD protection applications. It proves to be good candidates as ultra-low capacitance TVS devices.

The effect of 3mW 850nm Laser Diode on RAT BM-cell (3mW 850nm Laser Diode가 Rat BM-Cell에 미치는 효과)

  • Cheon, Min-Woo;Kim, Seong-Hwan;Park, Yong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.514-515
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    • 2008
  • Low level laser therapy has various therapy effects. This paper performed the basic study for developing the Low Level Laser Therapy Equipment for medical treatment. The apparatus has been fabricated using the laser diode and microprocessor unit. This equipment was fabricated using a micro-controller and a laser diode, and designed to enable us to control light time, frequency and so on. In this study, the designed device was used irradiation to find out how 850 nm laser diode affected the cell proliferation of RAT bone-marrow cells. Experiment was performed to irradiation group and non-irradiation group for Rat bone marrow cells. MTT assay method was chosen to verify the cell increase of two groups and the effect of irradiation on cell proliferation was examined by measuring 590 nm transmittance of micro plate reader. As a result, the cell increase of Rat bone marrow cells was verified in irradiation group as compared to non-irradiation group. The fact that specific wavelength irradiation has an effect on cell vitality and proliferation is known through this study.

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ELECTRONIC SAFING OF A DIODE LASER ARM-FIRE DEVICE

  • Kenneth E. Willis;Suk Tae Chang
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 1995.05a
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    • pp.171-175
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    • 1995
  • Semiconductor diode lasers that can generate one watt or more of optical energy for tens of milliseconds (quasi continuous wave) are now readily available. Several researchers have demonstrated that this power level, when properly coupled, can reliably initiate pyrotechnic mixtures. This means that the initiator containing the pyrotechnic can be protected against inadvertent initiation from electromagnetic radiation or electrostatic discharge by a conducting Faraday cage surrounding the explosive. Only a small dielectric window penetrates the housing of the initiator, thereby eliminating the conductors necessitated by a bridgewire electroexplosive device. The diode laser itself, however, functions at a low voltage (typically 3 volts) and hence is susceptible to inadvertent function from power supply short circuits, electrostatic discharge or induced RF energy. The rocket motor arm-fire device de-scribed in this paper uses a diode laser, but protects it from unintentional function with a Radio Frequency Attenuating Coupler (RFAC).The RFAC, invented by ML Aviation, a UK company, transfers power into a Faraday cage via magnetic flux, thereby protecting the diode, its drive circuit and the pyrotechnic from all electromagnetic and electrostatic hazards. The first production application of a diode laser and RFAC device was by the Korean Agency for Defense Development.

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