• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.285-287
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• 2009

When the laser diode is operated with continuous current, the light intensity from the laser diode deceases with time due to the temperature rise in the active layer. The phenomena, which is often called as DROOP, should be minimized in order to be used as a light source for the laser beam printer. We experimently examined the influences of the laser parameters such as threshold current, differential quantum efficiency on droop. It was found that decreasing the differential quantum efficiency of the laser diode is the effective way to minimize droop.

• KSBB Journal
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• v.27 no.4
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• pp.263-267
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• 2012

The purpose of this study was to determine optimum value of aeration rate for the cultivation of Chlorella sp. under illumination of red light emitting diode. The aeration rates varied from 0 to 2.4 vvm under the illumination of 4,400 lux of red light emitting diode. The highest specific growth rate of $1.51\;day^{-1}$ was obtained at the aeration of 0.7 vvm and lower specific growth rates were obtained for other aeration tests. Furthermore, the highest biomass concentration (1.02 g/L) was also obtained at the aeration of 0.7 vvm. Therefore, aeration of 0.7 vvm was determined to be the optimum aeration rate for the cultivation of Chlorella sp. under red light emitting diode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.6
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• pp.625-629
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• 2003

Low loss and high power MMIC limiters with GaAs PM diode were designed and fabricated. The new epitaxial structure of GaAs PIN diode was proposed in order to increase the high power capability. 2 types of limiter circuits have been designed and the limiting powers have been measured. Results indicated that the limiting power was depended on the circuit topology. Limiting power levels of 2-stage limiters are measured 16 ㏈m and 22 ㏈m at 14 ㎓, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.674-678
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• 2008

Low level laser therapy has various therapy effects. This paper performed the basic study for fabricating the low level laser therapy apparatus, and one of the goals of this paper was to make this apparatus used handily. The apparatus has been fabricated using the laser diode and microprocessor unit. The apparatus used a 635 nm laser diode for laser medical therapy and was designed for a pulse width modulation type to increase stimulation effects. In this study, the designed device was used to find out how 635 nm laser diode affected the skin injury of SD-Rat(Sprague-Dawley Rat). We divided the participants into two groups; irradiation group which was irradiated 10 minutes a day for 9 consecutive days, and none irradiation group. The results showed that the study group had lower incidence of inflammation and faster recovery, compared with the control group.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.4
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• pp.152-159
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• 2007

In this paper, a new design technique on the LRF which is useful for low power laser and a CBDA(Cummulative Binary Detection Algorithm) is proposed. The LD(Laser Diode) and Si-APD(Silicon Avalanche Photo Diode) are used for saving a power. In order to prove the detection range, the Si-APD binary data are accumulated before the range computation and the range finding algorithm. A prototype of the proposed DLRF(Diode Laser Range Finder) system was made and tested. An experimental result shows that the DLRF system have the same detection range using a less power(almost 1/32) than an usual military LRF. The proposed DLRF can be applied to the Unmanned Vehicles, Robot and Future Combat System of a tiny size and a low power LRF.

• Journal of the Korean Society of Combustion
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• v.11 no.3
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• pp.26-35
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• 2006

This work forcus on the development of gas sensor that measure the concentrations of exhaust gas using diode laser, Each diode laser for exhaust gas measurement is set to work at near-IR using both DA and WMS methods. Also use of fiber-coupled optical elements makes such a sensor rugged and easy to align. The results showed that gas concentrations of $O_2$, CO, $CO_2$, NO are accurately measured within ${\pm}2%$ error. The application of WMS method increased the beam intensity 2-3 times higher than DA method. It were experimentally compared WMS (Wavelength Modulation Spectroscopy) with DA (Direct Absorption) for the accuracy.

• Journal of the Korean Society of Combustion
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• v.17 no.1
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• pp.12-21
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• 2012

Simultaneous measurements of oxygen concentration and temperature using diode laser in the combustion environment are successfully accomplished. A single DFB type diode laser of 760 nm line centre frequency is used and the scanned-wavelength direct absorption spectroscopy method and wavelength modulation spectroscopy method are applied to measure absorption signals below 793 K temperature region. The experimental results show that oxygen concentration are measured within 1% accuracy and temperature are measured within 5% accuracy. This new method of simultaneous measurements of concentration and temperature with a single diode laser shows a great promise.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1082-1085
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• 2003

본 연구에서는 고분자를 사용하여 만든 유기EL소자인 PLED (Polymer Light Emitting Diode)의 제조공정 변화에 따른 소자성능을 연구하였다. PLED의 제작은 크게 ITO 기판 제작, 발광층 및 전극 증착 등의 공정으로 나누어진다. ITO 기판은 사진식각공정으로, 발광층의 증착은 스핀코팅법으로, 전극은 진공증착법으로 각각 제작하였다. 코팅 시 스핀속도 및 점도 조절을 통하여 발광층의 두께를 조절하였고, 스핀코팅 후 건조방법에 따라서 표면의 uniformity와 발광특성을 비교해 보았다. 실험결과 특정 두께에서 발광특성이 우수하게 나타나는 것을 확인할 수 있었다. 그리고 건조방법에 따라 발광층의 표면 uniformity에 차이가 있었으며, 표면 uniformity에 따라 diode의 I-V 특성 경향이 달리 나타났다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1663-1667
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• 2003

This thesis is on tile development of LD(Laser Diode) chip tester and the control system based on graphical programming language(LabVIEW) to control the equipment. The LD chip tester is used to test the optic power and the optic spectrum of the LD Chip. The emitter size of LD chip and the diameter of the receiver(optic fiber) are very small. Therefore, in order to test each chip precisely, this tester needs high accuracy. However each motion part of the tester could not accomplish hish accuracy due to the limit of the mechanical performance. Hence. an image processing with machine vision was carried out in order to compensate for the error. and also a load test was carried out so as to reduce tile impact of load on chip while the probing motion device is working. The obtained results were within ${\pm}$5$\mu\textrm{m}$ error.