• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.67-68
• /
• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.216-217
• /
• 2008

Zinc-oxide films were deposited by pulsed laser deposition (PLD) technique using doped ZnO target (mixed $In_2O_3$ 0.1, 0.3, 0.6 at. % - atomic percentage) on the p-type Si(111) substrate. A little Indium has added at the n-ZnO films for the electron concentration control and enhanced the electrical properties. Also, post thermal annealed ZnO films are shown an enhanced structural and controled electron concentration by the annealing condition for the hetero junction diode of a better emitting characteristics. The electrical and the diode characteristics of the ZnO films were investigated by using Hall effect measurement and current-voltage measurement.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.7 no.6
• /
• pp.1343-1351
• /
• 2012

In this study, trends for five research areas of LED(Light Emitting Diode), OLED(Organic Light Emitting Diode), LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and CRT(Cathode Ray Tube) are investigated using bibliometric analysis. The papers and patents citation data were extracted from Scopus and USPTO databases, respectively. We could figure out the research trends by the number of publications and citation information. We prospect the current interests and future trends by investigating the development process of the 5 research areas as function of time.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.6
• /
• pp.38-48
• /
• 1993

A recessed n-p Juction diode with the self-aligned sturcture is proposed and fabricated by using the polysilicon as an n$^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar divice and the n$^{+}$ polysilicone mitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition. As$^{+}$ dose for the doping of the polysilicon and the annealing condition using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS and the electrical characteristics are analyzed in terms of the ideality factor of diode (n), contact resistance and reverse leakage current. In addition, n$^{+}$-p junction diodes are formed by using the amorphous silicon (of combination of amorphous and polysiliocn) instead of polysilicon and their characteristics are compared with those of the standard sample. The As$^{+}$ dose for the formation of good junction is about 1~2${\times}10^{16}cm^{2}$ at given RTA conditions (1100.deg. C, 10sec).

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.11
• /
• pp.37-44
• /
• 2003

A distortion suppression technology for employing multiple inputs in 3n＋1 type current mode Max circuit is proposed using the adjustment of transconductance. If the number of input blocks of the current mode Max circuit increases, the high frequency distortion in the output signal grows. In this paper, it has been disclosed that the distortion in the multiple input Max circuit is proportional to such accumulated parasitic capacitance, to the derivative of the output signal and also to tile inverse of transconductance of the common diode-connected transistor. The proposed idea is by employing as larger transconductance of the common diode-connected transistor as possible. The effectiveness of the proposed idea has been proved through the HSPICE simulation for the current mode Max circuits with various numbers of input signals.

• Journal of the Korean Society of Propulsion Engineers
• /
• v.4 no.1
• /
• pp.102-108
• /
• 2000

The comparative evaluation/analysis of the initiation technologies currently being used, and the advanced initiation technologies currently being developed lot the aerospace and defense applications was performed. The evaluation criteria used were the compliance, performance, reliability, safety, and cost. The results clearly indicate that there is no one single initiation technology that will satisfy entire spectrum of initiation system requirements. Each initiation system architecture would require different initiation technologies that will satisfy the overall system performance requirements. However, laser initiation, particularly, the laser diode initiation has been getting more attention in recent years. The laser diode initiation, for most part, eliminates EMI and ESD concerns. In addition, laser diode initiation system can also be designed into relatively small packages, are optically connected systems by very light weight cables, are relatively easily designed to meet variety of initiation system requirements. Due to the these compelling factors, laser diode initiation has potential of becoming common initiation systems for many different aerospace and defense application.

• Journal of electromagnetic engineering and science
• /
• v.17 no.2
• /
• pp.65-70
• /
• 2017

The design and implementation aspects of a new single-balanced mixer for ultra-wideband (UWB) applications are presented in this study. The proposed mixer utilizes a miniaturized UWB ring coupler as a balun, consisting of a pair of in-phase and inverted-phase transitional structures. The well-balanced UWB performance of the ring coupler, aside from the optimized diode matching, results in improved conversion loss and inter-port isolations for a wide bandwidth. The size of the implemented single-balanced diode mixer is reduced to about 60% of the area of the conventional single-balanced ring diode mixer. The measured results of the proposed mixer exhibit an average conversion loss of 7.5 dB (minimum 6.7 dB) and a port-to-port isolation of greater than 18 dB over a UWB frequency range of 3.1-10.6 GHz. The measured results agree well with the simulated results.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.7 no.4
• /
• pp.147-150
• /
• 2014

In this paper, pulse current type power supply for laser diode dirver is discussed. High speed high power laser has been using widely because it becomes using on medical or manufacturing equipment, but researches have not being occurred actively. Current profiling method is proposed for improved lifetime expectancy of laser diode(LD). The current waveform of driving LD is most important factor of the performance and lifetime of LD. The proposed method improves shape and stability of current waveforms, thus will effect right direction of lifetime expectation.

• Journal of the Korean Society of Safety
• /
• v.10 no.3
• /
• pp.30-41
• /
• 1995

This paper proposed a simple method for measuring surface roughness of ground surface. Utilizing non-contact in-process measuring system using the diode laser. The measurement system is consisted of a laser unit with a diode laser and a cylindrical lens, a detecting unit with polygon mirror and CCD array sensor, and a signal processing unit with a computer and device. During operation, this measuring system can provide information on surface roughness in the measuring distance with a single sampling and simultaniously monitor the state of the grind wheel. The experimental results, showed that the Increase of the feed rate and the dressing speed an caused increase in the surface roughness and when the surface roughness is 4Rmax-10Rmax, the cutting speed is 1653m/min-1665m/min, the table speed is 0.2n1/min -0.9m/min, the dressing speed is 0.2mm/rev～0.4mm/rev, the stylus method and the in-process method can be obtained the same results. Thus, under limited working conditions, using the proposed system, the surface roughness of the ground surface during cylindrical grinding can be obtained through the in-process measurement method using the diode laser.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1994.05a
• /
• pp.152-153
• /
• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.