• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제53권9호
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 D
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• pp.754-757
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• 2000

Si PIN diodes are subject to be damaged from the exposure of fast neutron by displacement of Si lattice structure. The defects are effective recombination centers for carriers which migrate through the base region of the PIN diode when forward voltage is applied. It causes an increase in current and a decrease in resistivity of the diode. This paper presents the development of a neutron sensor based on displacement damage effect. PIN diodes having various structures were made by micro-fabrication process, and neutron beam test was performed to identify neutron damage effect to the diode. From a result of the test, it was shown that the forward voltage drop of the diode, at a constant current, has good linearity for neutron dosage. Also it was found that the newton dosage can be measured by the pin diode neutron dosimeter with constant current power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.22-25
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• 2001

A thyristor switch circuit for capacitor discharge application, of which the equivalent circuit includes a resistor between cathode and gate of a reverse-conducting thyristor and an avalanche diode anti-parallel between its anode and gate to set thyristor tum-on voltage, is monolithically integrated by planar process with AVE double-implantation method. To ensure a lower breakdown voltage of the avalanche diode for thyristor tum-on than the break-over voltage of the thyristor, $p^+$ wells on thyristor p base layer are made by boron implantation/drive-in for a steeper doping profile with higher concentrations while rest p layers of thyristor and free-wheeling diode parts are formed with Al implantation/drive-in for a doping profile of lower steepness. The free-wheeling diode part is isolated from the thyristor part by formation of separated p-well emitter for suppressing commutation between them, which is achieved during the formation of thyristor p-base layer.

• 한국통신학회논문지
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• 제19권3호
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• pp.591-596
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• 1994

Gain-guided 구조를 갖는 단일양자우물 laser diode에서, stripe 폭에 따른 threshold의 변화를 복소수영역 유효굴적률방법을 이용하여 분석하였다. 분석결과 stripe 폭이 좁은 영역에서는, 측방향광집속률을 나타내기위하여 세롭게 도입된 변수 가 수직방향광집속률 가 감소함에따라 급격하게 감소하는 경향을 알아내었다. 따라서 일반적으로 매우작은 수직방향광집속률을 갖는 단일양자우물 laser diode에서는, stripe 폭의 크기에 따라서는 광집속률이 측방향은 물론 수직방향으로도 매우 나빠지게 됨으로 이득포와현상을 더욱 심하게시키게되며 경우에 따라서는 문턱전류가 비정상적으로 증가하는 현상으로 이어지게된다. 이와같은 문턱치의 stripe 폭에 대한 약간의 비정상적인 의존성을 이해하는 것은 양자우물 laser diode의 구조최적화에 있어서 매우 중요한 일이라고 판단된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• ETRI Journal
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• 제38권2호
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• pp.244-251
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• 2016

In this paper, we investigate the electrical characteristics of two trench-gate-type super-barrier rectifiers (TSBRs) under different p-body implantation conditions (low and high). Also, design considerations for the TSBRs are discussed in this paper. The TSBRs' electrical properties depend strongly on their respective p-body implantation conditions. In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage ($V_F$) drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR with a high p-body implantation condition, it exhibits pn junction diode.like properties, such as a high $V_F$, low reverse leakage current, and high peak reverse recovery current owing to a minority carrier operation. As a result, the TSBR with a low p-body implantation condition is capable of operating as a MOSFET, and the TSBR with a high p-body implantation condition is capable of operating as either a pn junction diode or a MOSFET, but not both at the same time.

• 한국광학회지
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• 제23권5호
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• pp.227-232
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• 2012

본 논문에서는 RLD (Reflective Laser Diode)와 FBG (Fiber Bragg Grating)가 하이브리드 집적된 LD (이하 FG-LD)의 정적 및 동적 특성을 해석하기 위하여 대신호 시영역 모델링 방법을 구현하였다. FBG의 유효길이 2.1 mm를 포함한 외부 집적 공진기의 길이가 8 m인 경우에 0.44GHz의 동적 주파수 요동과 6.4 GHz 정도의 동적 주파수 요동 결과를 나타내었다. 또한 10 Gbps NRZ 신호의 아이가 크게 오픈된 상태를 잘 유지함을 확인하였다. FG-LD는 50 km 정도의 길이를 커버하는 10 Gbps 급 단일파장 레이저로서의 효용성이 있을 것으로 기대된다.

• 대한전기학회논문지:시스템및제어부문D
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• 제54권11호
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• pp.654-659
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• 2005

An improved power supply for APD(Avalanche Photo Diode) with a received optical power monitoring circuit allows the received optical power increase temporary without of the degradation of the electrical signal. For the cost reduction and simple fabrication, an improved power supply has been proposed that it was designed for driving a APD as a receiving device of a wireless optical transmission system. It was demonstrated that it was possible to improve a dynamic range by compensating the temperature coefficient of the APD up to 1.0 V/$^{\circ}C$ through the power supply. Also, for an efficient transmission at the receiver end, a simple structure of a single cylindrical micro-lens configuration was used in conjunction with the laser diode to partially compensate a laser beam ellipticity. For this purpose, an astigmatism introduced by the micro-lens is utilized for the additional compensation of the beam ellipticity at the receiver end. In this paper, it is demonstrated that an efficient beam shaping is realized by using the proposed configuration consisting of the single lens attached to the laser diode.

• 전기학회논문지
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• 제60권1호
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• pp.105-108
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• 2011

Newly-developed fabrication of a p-n heterojunction diode constructed with a p-Si nanowire (NW) and an n-ZnO nanoparticle (NP) thin-film by the dielectrophoresis (DEP) technique is demonstrated in this study. With the bias of 20 Vp-p at the input frequency of 1 MHz, the most efficient assembly of the n-ZnO NPs is shown for the fabrication of the p-n heterojunction diode with a p-Si NW. The p-n heterojunction diode fabricated in this study represents current rectifying characteristics with the turn on voltage of 1.1 V. The diode can be applied to the fabrication of optoelectrical devices such as photodetectors, light-emitting diodes (LEDs), or solar cells based on the high conductivity of the NW and the high surface to volume ratio of the NP thin film.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2017년도 춘계학술대회
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• pp.712-713
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• 2017

발광 다이오드는 임상용으로 사용되는 레이저에 비해서 발생하는 열이 적고, 일반 건강한 세포에 무해하며, 비침습적인 특성으로 높은 안전성을 가지고 있으며 현재 많은 연구가 진행되고 있다. 따라서 본 논문에서는 복수의 파장대역을 갖는 발광 다이오드를 이용하여 사람의 자궁경부암 조직의 증식억제 주파수효과를 확인하였다. 준비된 자궁경부암 세포를 다양한 파장대의 발광 다이오드에 일정한 시간동안 조사한 후 세포의 활성도를 측정하였고, 그 결과 비교적 파장이 긴 빨강과 초록색의 노출보다 파장이 짧은 파란색 빛이 자궁경부암 세포의 증식억제 효과가 있음을 확인하였다.