• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.11.1-11.1
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• 2011

We have developed a simple synthetic method for fabricating a wafer-scale colloidal crystal film of 2D crystals in a 1D stack based on a combination of two simple processes : the self-assembly of polystyrene (PS) nanospheres at the water-air interface and the layer-by-layer (LbL) scooping transfer technique. The main advantage of this approach is that it allows excellent control of the thickness (at a layer level) of the crystals and the formation of a vertical crack-free layer over a wafer-scale (4 inch). We investigate the optical and morphological properties of the PhC multilayers fabricated using various mono-sized colloidal crystals (250, 300, 350, 420, 580, 720, and 850 nm), and mixed binary colloidal crystals (300/350 and 250/350 nm).

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.162-163
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• 2006

Control over surface induced self-assembly of electronically active pi-conjugated molecules provides great opportunities to fine-tune and optimize their electrical properties in organic electronics. In this study, with the aim of enhancing the electrical performances by promoting surface induced two-dimensional self-assembly in representative pi-conjugated molecules such as poly (3-hexylthiophene) and pentacene, we have controlled the intermolecular interaction at the interface between pi-conjugated molecules and substrate by using self-assembled monolayers functionalized with various groups. We will discuss the dependency of pi-conjugated molecules on the specific properties of the substrate surface and the effect of surface induced self-assembly on electrical performances in organic transistors.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• Corrosion Science and Technology
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• v.3 no.3
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• pp.102-106
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• 2004

Al foil used was 99.9 and 99.99 %. Test solution used was NaCl solution. The noise was determined using controlled potential electrolysis at -200 and -700 mV vs. NHE. The current fluctuation was caused by breakdown and repaired process of aluminum oxide film. The current fluctuation value of noise was proportion to degree of growth. The number of noise was proportion to the number of pit. The examining of current flutulation value and number of noise could be evaluated corrosion. A 99.99 % Al foil was the mostly crystal of {100} plane, and showed three-dimensional, as azimuth pit with along the direction of this place piled up. A 99.9 % Al foil was polycrystal, and in order of (311) >(222) >(200) >(111) plane. The azimuth pit did not occurred as the dissolution was occurred from each plane.

• Carbon letters
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• v.20
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• pp.26-31
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• 2016

In this study, we report a general method for preparation of a one-dimensional (1D) arrangement of Au nanoparticles on single-walled carbon nanotubes (SWNTs) using biologically programmed peptides as structure-guiding 1D templates. The peptides were designed by the combination of glutamic acid (E), glycine (G), and phenylalanine (F) amino acids; peptides efficiently debundled and exfoliated the SWNTs for stability of the dispersion and guided the growth of the array of Au nanoparticles in a controllable manner. Moreover, we demonstrated the superior ability of 1D nanohybrids as flexible, transparent, and conducting materials. The highly stable dispersion of 1D nanohybrids in aqueous solution enabled the fabrication of flexible, transparent, and conductive nanohybrid films using vacuum filtration, resulting in good optical and electrical properties.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.788-790
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• 2003

Closed-cell type barrier ribs of PDP were formed by capillary molding process using molds prepared by inclined UV lithography process. Various types of molds with different inclined angles were prepared by patterning SU-8 thick photoresist film and casting with PDMS. The ribs with various type cells were successfully formed by the process. The effects of inclined angle on the distortion of barrier ribs during sintering were investigated. The results indicated that the barrier ribs with a draft angle and dimensional change does not affect the distortion of the barrier ribs during sintering, suggesting that the closed-cell must be isotropic in sintering shrinkage.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.513-518
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• 2003

The piston slap phenomenon is one of the major noise source of reciprocating compressors used in household electric appliances. In response to public demand, strict regulations are increasingly being imposed on the allowable noise level which is caused mostly by household electric appliances. In this paper, the dynamic behavior of suction and discharge valves are analytically calculated and the lubricant behavior between piston and cylinder are investigated using two-dimensional Reynolds equation. And the piston slap caused by the piston secondary motion is investigated by the finite element method.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.692-697
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• 1997

This paper presents a method of grinding and polishing automation of precision die after CNC machining. The method employs a robot system equipped with a pneumatic spindle and a special abrasive film pad. The robote program is automatically generated off-line from a PC and downloaded to robot controller. Position and orientation data for the program is supplied from cutter contact (CC) data of NC machining process. This eliminates separate robot teaching process. This paper aims at practical automation of die finishing process which is very time consuming and suffering from shortage of workpeople. Time loss for changeover from one product to next is eliminated by off-line programming exploiting appropriate NC machining data. Dextrous 6-axis robot with rigid wrist and simple tooling enables the process applicable to larger, rather complex 3 dimensional free surfaces

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.207-210
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• 2003

The chemical mechanical planarization (CMP) process is a method of planarizing semiconductor wafers with a high degree of success. However, fundamental mechanisms of the process are not fully understood. Several theoretical analyses have been introduced, which are focused on kinematics, von Mises stress distributions and hydrodynamic lubrication aspects. This paper is concerned with hydrodynamic lubrication theory as the chemical mechanical planarization model; the three-dimensional Reynolds equation is applied to predict slurry film thickness and pressure distributions between the pad and the wafer. This paper classifies geometry of wafer into 3 types and focuses on the differences between them.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.918-921
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• 1999

The breakdown voltage in fully depleted SOI N-MOSFET’s have been studied over a wide range of film thicknesses, channel doping, and channel lengths. An asynmmetric Source/Drain SOI technology is proposed, which having the advantages of Normal LDD SOI(Silicon-On-Insulator) for breakdown voltage and gives a high drivability of LDD SOI without sacrificings hot carrier immunity The two-dimensional simulations have been used to investigate the breakdown behavior in these device. It is found that the breakdown voltage(BVds) is almost same with high current drivability as that in Normal LDD SOI device structure.