• 전기의세계
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• v.27 no.6
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• pp.69-75
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• 1978

Diffusion processes of boron, phosphorus, and arsenic into silicon have been investigated using a new diffusion source called "spin-on source". Diffusion coefficients of these impurities have been calculated from the experimental results and are compared with the published values. Reasonable agreements have been found between the calculated and the published values. From this study, it is concluded that the spin-on source can be used as the diffusion source for integrated circuit fabricaticon.ricaticon.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.17-26
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• 1984

A computer program (DIFSIM: Diffusion SIMulator) was written to calculate the impurity profile, specifically boron and phosphorus, due to three different diffusion processes-predeposition, drive-in in inert ambient, and drive-in in oxidizing ambient. The vacancy mechanism including Fair and Tsai's theory for phosphDrus diffusion was widely incorporated for modeling various diffusion processes. The concentrationtependent oxidation rate was also explained using the vacancy model, while the oxidation - enhanced diffusion was mo dolled using catkins replacement mochanlsm . The simulation results using DIFSIM showed a fairly good agreement with the experimental data by adjusting some of the empirical parameters in the program. The results obtained using DIFSIM were compared with the results from SUPREM II.

• The Korean Journal of Applied Statistics
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• v.24 no.6
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• pp.1007-1020
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• 2011

Since the research of Black and Scholes (1973), modeling methods using diffusion processes have performed principal roles in financial engineering. In modern financial theories, various types of diffusion processes were suggested and applied in real situations. An estimation of the model parameters is an indispensible step to analyze financial data using diffusion process models. Many estimation methods were suggested and their properties were investigated. This paper reviews the statistical properties of the, Euler approximation method, New Local Linearization(NLL) method, and Generalized Methods of Moment(GMM) that are known as the most practical methods. From the simulation study, we found the NLL and Euler methods performed better than GMM. GMM is frequently used to estimate the parameters because of its simplicity; however this paper shows the performance of GMM is poorer than the Euler approximation method or the NLL method that are even simpler than GMM. This paper shows the performance of the GMM is extremely poor especially when the parameters in diffusion coefficient are to be estimated.

• Journal of the Korean Statistical Society
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• v.29 no.4
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• pp.489-499
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• 2000

We propose a new instrumental variable estimator of the complex parameter of a class of univariate complex-valued diffusion processes defined by the possibly non-stationary and/or nonlinear stochastic differential equations. On the basis of the exact finite sample distribution of the pivotal quantity, we construct the exact confidence intervals and the exact tests for the parameter. Monte-Carlo simulation suggests that the new estimator seems to provide a viable alternative to the maximum likelihood estimator (MLE) for nonlinear and/or non-stationary processes.

• Journal of the Korean Mathematical Society
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• v.38 no.2
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• pp.385-408
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• 2001

This is an introduction to a stochastic version of E. Cartan′s symplectic mechanics. A class of time-symmetric("Bernstein") diffusion processes is used to deform stochastically the exterior derivative of the Poincare-Cartan one-form on the extended phase space. The resulting symplectic tow-form is shown to contain the (a.e.) dynamical laws of the diffusions. This can be regarded as a geometrization of Feynman′s path integral approach to quantum theory; when Planck′s constant reduce to zero, we recover Cartan′s mechanics. The underlying strategy is the one of "Euclidean Quantum Mechanics".

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1995.03a
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• pp.155-161
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• 1995

Superplastic forming/diffusion bonding(SPF/DB) processes are analyzed using a rigid visco-plastic finite element method. The optimum pressure-time relationship for a target strain rate and thickness distributions were predicted using two-node line element based on membrane approximation for plane strain shapes. Material behavior during SPF/DB of the integral structures with complicated shapes are investigated. The tying condition is employed for the analysis inter-sheet contact problems. A movement of rib structure is successfully prodicted during the forming.

• Journal of the Korean Institute of Telematics and Electronics
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• v.3 no.2
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• pp.2-9
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• 1966

fabricating processes of silicon planar n-p-n transistors are described. These processes include materical preparation, oxidation, photoresist, boron diffusion, phosphorous diffusion, and aluminium metalizing. Boron layer has been diffused in n type silicon from B2O3-SiO2 source using the box method, Phosporous layer has been diffused from P2O5-SiO2 source with the same method. The planar diodes are also fabricated by the processes described above.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.954-958
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• 2000

The characterization of zinc diffusion processes applied for high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The zinc diffusion profiles, such as the diffusion depth and the zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severly impacted on the process parameters, such as the amount of Zn$_3$P$_2$ source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.731-734
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• 2000

The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2005.04a
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• pp.114-116
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• 2005

Natural attenuation has been actively studied and often selected as final clean-up process in remediation of contaminated ground-water and soil for the last decade. Accordingly, understanding of natural processes affecting the fate and transport of contaminants in the subsurface becomes important for a success of implementation of the natural remediation strategy, Contaminant advection and diffusion processes in the unsaturated zone are naturally related to environmental changes in the atmosphere. The atmospheric pressure changes affecting the transport of contaminants in the subsurface are investigated in this study. Moisture content, trichloroethylene (TCE) concentration, temperature, and pressure variations in the subsurface were measured for the July, August, November, and December 2001 at Picatinny Arsenal, New Jersey. These data were used for a one-phase flow and one-component transport model in simulating the soil-gas flow and accordingly the TCE transport in the subsurface in accordance with the atmosphere pressure variations at the surface. The soil-gas velocities during the sampling periods varied with a magnitude of $10^{-6}\;to\;10^{-7}\;m\;s^{-1}$ at land surface. The TCE advection fluxes at land surface were several orders of magnitude smaller than the TCE diffusion fluxes. A sensitivy analysis indicated that advection fluxes were more sensitive to changes in geo-environmental conditions compared to diffusion fluxes. Of all the parameters investigated in this study, moisture content has the most significant effect on TCE advection and diffusion fluxes.