• Journal of the Korean Geotechnical Society
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• v.20 no.3
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• pp.5-11
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• 2004

Characteristics of advective-diffusive transport of inorganic chemicals in clayey soils as well as in two hardened barrier materials of silica and lime are analyzed from the laboratory column test and compared with those of pure diffusive column test. The results show that the average dispersion coefficients of three materials are $4.39\times l0^{-10}\textrm{m}^2 /s,\; 1.98\times l0^{-10}\textrm{m}^2 /s,\; 1.99\times l0^{-10}\textrm{m}^2 /s$, respectively, and the value of clay is higher than that of hardened barrier materials. There was no significant difference between the dispersion coefficients of advective-diffusive column tests and the effective diffusion coefficients from the pure diffusive column tests, if advective velocity was lower than l0$^{-7}$$m^2$/s. The range of dispersion coefficients of advective-diffusive column tests was narrower than that of diffusion coefficients of pure diffusion tests.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Korean Journal of Metals and Materials
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• v.48 no.10
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• pp.901-906
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• 2010

The first stage blade of a gas turbine was operated under a severe environment which included both $1300^{\circ}C$ hot gas and thermal stress. To obtain high efficiency, a thermal barrier coating (TBC) and an internal cooling system were used to increase the firing temperature. The TBC consists of multi-layer coatings of a ceramic outer layer (top coating) and a metallic inner layer (bond coat) between the ceramic and the substrate. The top and bond coating layer respectively act as a thermal barrier against hot gas and a buffer against the thermal stress caused by the difference in the thermal expansion coefficient between the ceramic and the substrate. Particularly, the bondcoating layer improves the resistance against oxidation and corrosion. An inter-diffusion layer is generated between the bond coat and the substrate due to the exposure at a high temperature and the diffusion phenomenon. A thickness measurement result showed that the bond coat of the suction side was thicker than that of the pressure side. The thickest inter-diffusion zone was noted at SS1 (Suction Side point 1). A chemical composition analysis of the bond coat showed aluminum depletion around the inter-diffusion layer. In this study, we evaluated the properties of the bond coat and the degradation of the coating layer used on a $1300^{\circ}C$-class gas turbine blade. Moreover, the operation temperature of the blade was estimated using the Arrhenius equation and this was compared with the result of a thermal analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.66-66
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• 2008

Most of the properties of ITO films depend on their substrate nature, deposition techniques and ITO film composition. For the display panel application, it is normally deposited on the glass substrate which has high strain point (>575 degree) and must be deposited at a temperature higher than $250^{\circ}C$ and then annealed at a temperature higher than $300^{\circ}C$ in order to high optical transmittance in the visible region, low reactivity and chemical duration. But the high strain point glass (HSPG) used as FPDs is blocking popularization of large sizes FPDs because it is more expensive than a soda lime glass (SLG). If the SLG could be used as substrate for FPDs, then diffusion of Na ion from the substrate occurs into the ITO films during annealing or heat treatment on manufacturing process and it affects the properties. Therefore proper care should be followed to minimize Na ion diffusion. In this study, we investigate the electrical, optical and structural properties of ITO films deposited on the SLG and the Asahi glass(PD200) substrate by rf magnetron sputtering using a ceramic target ($In_2O_3:SnO_2$, 90:10wt.%). These films were annealed in $N_2$ and air atmosphere at $400^{\circ}C$ for 20min, 1hr, and 2hrs. ITO films deposited on the SLG show a high electrical resistivity and structural defect as compared with those deposited on the PD200 due to the Na ion from the SLG on diffuse to the ITO film by annealing. However these properties can be improved by introducing a barrier layer of $SiO_2$ or $Al_2O_3$ between ITO film and the SLG substrate. The characteristics of films were examined by the 4-point probe, FE-SEM, UV-VIS spectrometer, and X-ray diffraction. SIMS analysis confirmed that barrier layer inhibited Na ion diffusion from the SLG.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.87-95
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• 1995

The effect of stuffing of TiN on the diffusion barrier property between A1 and Si was investigated. The stuffing of TiN was performed by annealing in a Nz ambient at $450^{\circ}C$ for 30min. By TEM analysis, it is identified that there are solid-free or open spaces of a b u t 10-20$\AA$ between the grains of asdeposited TiN. In the case of stuffed TiN, the width of solid-free or open spaces has been reduced to about 10$\AA$ or below. The combination of RBS and AES analyses showed that the asdeposited TiN had about 7at.% of oxygen, and that the stuffed TiN had about 10-15at.% of oxygen. The diffusion barrier test result shows that after annealing at $650^{\circ}C$ for lhour, the asdeposited TiN fails due to the formation of A1 spikes and Si pits in the Si substrate. However, in the case of stuffed TiN, there is no indication of Al spikes and Si pits at the same annealing condition. Thus, it is concluded that this stuffing of TiN significantly improves the diffusion barrier property of TiN between A1 and Si. It is considered that the stuffing effect results from the reduced diffusion through grain boundaries due to the reduced spacing of grain boundaries.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.160-165
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• 2000

We have investigated the electrical and diffusion barrier properties of MgO produced on the surface of Cu (Mg) alloy. Also the diffusion barrier property of the interfacial MgO between Cu alloy and $SiO_2$ has been examined. The results show that the $150\;{\AA}$-MgO layer on the surface remains stable up to $700^{\circ}C$, preventing the interdiffusion of C Cu and Si in Si/MgO/Cu(Mg) structure. It also has the breakdown voltage of 4.5V and leakage current density of $10^{-7}A/\textrm{cm}^2/$. In addition, the combined structure of $Si_3N4(100{\AA})/MgO(100{\AA})$ increases the breakdown voltage up to lOV and reduces the leakage current density to $8{\tiems}10^{-7}A/\textrm{cm}^2$. Furthermore, the interfacial MgO formed by the chemical reac­t tion of Mg and $SiO_2$ reduces the diffusion of copper into $SiO_2$ substrate. Consequently, Cu(Mg) alloy can be applied as a g gate electrode in TFT /LCDs, reducing the process steps.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1998.11a
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• pp.216-220
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• 1998

Experimental studies were carried out to investigate water diffusion in unsaturated compacted bentonite for a landfill of hazardous wastes. Water content distributions were measured and water diffusion coefficients were determined when the dry densities of compacted bentonite were in the range of 1.4 - 1.8 g/㎤. Resaturation times were also calculated to analyze the ability of the compacted bentonite to retard water movement. The results obtained were as follows: Diffusion model described properly the water migration in unsaturated compacted bentonite. Water diffusion coefficients ranged from 4.30$\times$10$^{-6}$ $\textrm{cm}^2$/sec to 1.93$\times$10$^{-6}$ $\textrm{cm}^2$/sec, and decreased with increasing the dry density. The dry density of compacted bentonite was found to be an important factor to control the resaturation time by water. This study suggests that the domestic compacted bentonite should be a good barrier material against water movement in a landfill of hazardous wastes.

• Journal of the Korean Magnetics Society
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• v.16 no.6
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• pp.283-286
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• 2006

We have studied the role of ${\alpha}-Al_{2}O_{3}$ buffer layer as a diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films for high-density recording media. In the interface of amorphous Ba-ferrite $(1900-{\AA}-thick)/SiO_{2}$ thin film during annealing, the interfacial diffusion started to occur at ${\sim}700^{\circ}C$. As the annealing temperature increased up to $800^{\circ}C$, the interfacial diffusion abruptly proceeded resulting in the high interface roughness and the deterioration of the magnetic properties. In order to control the interfacial diffusion at the high temperature, we introduced ${\alpha}-Al_{2}O_{3}$ buffer layer ($110-{\AA}-thick$) in the interface of Ba-ferrite/$SiO_{2}$ thin film. During the annealing of Ba-ferrite/${\alpha}-Al_{2}O_{3}/SiO_{2}$ thin film even at ${\sim}800^{\circ}C$, the interface was very smooth. The magnetic properties, such as saturation magnetization and intrinsic coercivity, were also enhanced, due to the inhibition of interfacial diffusion by the ${\alpha}-Al_{2}O_{3}$ buffer layer. Our study suggests that the ${\alpha}-Al_{2}O_{3}$ buffer layer act as a useful interfacial diffusion barrier in the Ba-ferrite/$SiO_{2}$ magnetic thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Metals and materials international
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• v.24 no.6
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• pp.1232-1240
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• 2018

Corrosion properties of dissimilar friction stir welded 6061 aluminum and HT590 steel were investigated to understand effects of galvanic corrosion. As cathode when coupled, HT590 was cathodically protected. However, the passivation of AA6061 made the aluminum alloy cathode temporarily, which leaded to corrosion of HT590. From the EIS analysis showing Warburg diffusion plot in Nyquist plots, it can be inferred that the stable passivation layer was formed on AA6061. However, the weld as well as HT590 did not show Warburg diffusion plot in Nyquist plots, suggesting that there was no barrier for corrosion or even if it exists, the barrier had no function for preventing and/or retarding charge transport through the passivation layer. The open circuit potential measurements showed that the potential of the weld was similar to that of HT590, which lied in the pitting region for AA6061, making the aluminum alloy part of the weld keep corrosion state. That resulted in the cracked oxide film on AA6061 of the weld, which could not play a role of corrosion barrier.