• 전자공학회논문지A
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• 제33A권5호
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• pp.108-116
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• 1996

A semiconductor process imulator operated in windows$^{TM}$ environment has been developed. two-dimensional process simulation in personal computer has been enabled due to the improvement of CPU speed and the efficient use of memory. The process simulator in this paper is capable of calculating diffusion, oxidation, ion implantation, etching and deposition in two-dimensional manner. In addition, graphic-user-friendly editor, parser, and multi-dimensional graphical routine is also available in the devloped simulator.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.518-520
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• 1987

The semiconductor-metal-semiconductor structure is considered to be promising for high speed electronic devices. To realize this, the selective LPE and the proper design of epitaxial mask were adopted. Enhanced As diffusion made it possible to grow GaAs over W on GaAs. Buried W Schottky diode was fabricated and the rectifying I-Y characteristics were obtained.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.164-166
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• 2013

Using a simple random walk model, this study simulated the growth of a self-assembled monolayer (SAM) pattern generated by dip-pen nanolithography (DPN). In this model, the SAM pattern grew mainly via the serial pushing of molecules deposited from the tip. This study examined various SAM patterns, such as lines, crosses and letters, by changing the tip scan speed.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2014년도 제49회 KOSCO SYMPOSIUM 초록집
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• pp.175-178
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• 2014

The flame cell dynamics in 2-D opposed nonpremixed tubular configuration was investigated using high-fidelity numerical simulations. The diffusive-thermal instability occurs as the $Damk{\ddot{o}}hler$ number, Da, approaches the 1-D extinction limit of the tubular flames and several flame cells are generated depending on Da, and flame radius. In general, the number of flame cells are found close to the largest wave number from the linear stability analysis. It was also found from the displacement speed analysis that during the local flame extinction and cell formation, negative edge flame speed is observed due to small gain from reaction compared to large loss from diffusion.

• 한국자동차공학회논문집
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• 제7권9호
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• pp.165-171
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• 1999

An oil layer fuel absorption /desorption modeling was developed. Multi-component fuel model has showed more reasonable condition than single component model. Henry's constant which is related to solubility is the most important variable in the oil layer absorption/desorption mechanism. The oil segments close to the top of the cylinder liner have more significant contribution to the fuel absorption and desorption process than other oil segments. At the warmed-up condition, the effect of the engine speed on the precent fuel absorbed/desorbed is minimal. But at low il film temperature, percent of fuel abosrbed/desorbed is decreased with increasing the engine speed because of low value of molecular diffusion coefficient of fuel. The amount of fuel trapped in the piston crevice is from 2 to 2.3 times larger than that of fuel in the oil fim. However, fuel form oil film slowly desorbs into the combustion chamber compared with fuel from the piston crevices when the engines is cold.

• 한국안전학회지
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• 제14권2호
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• pp.109-115
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• 1999

The release of gas from the LPG storage tank by the rupture or leakage can occure explosion and this causes serious damage to people and structures. In this study, the explosion effect and damaging distance were measured for the LPG cloud explosion to perform the quantitative risk assessment for the PSM, and the effective parameters on the explosion were found. The gas dispersion and mass contaminant in the explosion limits were calculated by using DEGADIS, and it was converted to TNT equivalency and damaging distance. As a result, the wind speed was the most effective parameter on the diffusion rate and TNT equivalency, and the damaging distance were increased with decrease of wind speed and surface roughness.

• 한국분무공학회지
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• 제15권2호
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• pp.67-73
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• 2010

The capability of pilot injection with small fuel quantity at all engine operating conditions is one of the main feature of the common rail direct injection system. The purpose of the pilot injection is to lower the engine noise and to reduce the NOx emissions. This study describes the pilot spray structure characteristics of the common-rail diesel injectors with different electric driving characteristics, including solenoid-driven and piezo-driven type. Namely three common-rail injectors with different electric current wave were investigated in this study. The pilot spray characteristics such as spray speed, spray tip penetration, and spray angle were obtained by spray images, which is measured by the back diffusion light illumination method with optical system for high-speed temporal photography. As this research results, it was found that pilot injection of common-rail system was effected by rate of injection with different electrical characteristic for injector driving.

• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• 한국분무공학회지
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• 제15권1호
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• pp.25-30
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• 2010

The capability of pilot injection with small fuel quantity at all engine operating conditions is one of the main feature of the common rail direct injection system. The purpose of the pilot injection is to lower the engine noise and to reduce the NOx emissions. This study describes the pilot spray structure characteristics of the common-rail diesel injectors with different electric driving characteristics, including solenoid-driven and piezo-driven type. Namely three common-rail injectors with different electric current wave were investigated in this study. The pilot spray characteristics such as spray speed, spray tip penetration, and spray angle were obtained by spray images, which is measured by the back diffusion light illumination method with optical system for high-speed temporal photography. As this research results, it was found that pilot injection of common-rail system was effected by rate of injection with different electrical characteristic for driving the injector.

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.