• 대한전자공학회논문지
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• 제25권8호
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• pp.884-892
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• 1988

An asymptotic solution of electromagnetic waves scattered by an arbitrary-angled dielectric wedge in the E-polarized plane wave incidence is obtained by adding a correction to the physical optical fields given in the previous paper of these companion papers, Part I. The source for the asymptotic correction field valid in the far-field region can be equivalent to the multipole line sources at the tip of the wedge, of which coefficients are evaluated numerically by solving a dual series equation. The corrected field patterns are plotted for the typical case treated in Part I.

• Progress in Superconductivity
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• 제1권2호
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• pp.135-140
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• 2000

Distribution of Pr ions between Y- and Ba-site of the $Y(Ba_{1-Xn}Pr_{Xn})_2Cu_3O_y$ ($0{\leq}Xn{\leq}{0.3}$, Xn : nominal composition) material prepared by the solid state reaction method was studied. Although the samples have narrow superconducting transition, tiny peaks of $Y_2BaCuO_5$ impurity phase are included in the x-ray diffraction patterns suggesting that some of the Pr ions are entered into the Y-site. The distribution of Pr ions between Y- and Ba-site was determined by measuring the mass fraction of YBCO and $Y_2BaCuO_5$ phase for each sample through the Rietveld analysis of the x-ray diffraction data. About 60 % of Pr ions occupy the Y-site regardless of the Pr content. Various superconducting parameters such as the oxygen content and the hole concentration etc. are compared before and after the impurity correction.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.240-244
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• 2000

The three-dimensional orientation distribution function of a conical shaped tungsten liner prepared by the thermo-mechanical forming process was analyzed by 1.525$\AA$ neutrons to carry out the Rietveld refinement. The pole figure data of three reflections, (110)(220) and (211) were measured. The orientation distribution functions for the normal and radial directions were calculated by the WIMV method. The inverse pole figures of the normal and radial directions were obtained from their orientation distribution functions. The Rietveld refinement was performed with the RIETAN program that was slightly modified for the description of preferred orientation effect. We could successfully do the Rietveld refinement of the strongly textured tungsten liner by applying the pole density of each reflection obtained from the inverse pole figure to the calculated diffraction pattern. The correction method of preferred orientation effect based on the inverse pole figures showed a good improvement over the semi-empirical texture correction based on the direct usage of simple empirical functions.

• 대한전자공학회논문지
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• 제18권5호
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• pp.35-45
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• 1981

직각 쐐기는 유전체에 평면 전자파가 입사할때 일어나는 산란파에 대한 점근해를 구하였다. 산란파는 유전체경계면으로부터 반사된 파 및 고절된 파와 유전체 끝 모서리로부터 회석된 도간면파로 구성하였다. 모서리에서 회절된 전제는 물리광학 근사법에 의한 해에 교정항을 더하여 구하였으며, 이 교정 전계는 수치 계산에 의하여 풀 수 있는 이중 급수 방정식으로부터 구하였다. 구해진 점근해의 유효성은 유전체의 상대 유전률 ε의 값이 -에 갈때와 1에 가까운 값을 가질때의 두 극한치에서 검토 되었다. ε이 작을때는 Rawlins이 구한 ε Neumann계수해의 계산 결과와 같았으며, ε이 ∞에 접근할때 모서리의 회절 패턴은 도체 모서리의 회절패턴에 접근함을 보일 수 있다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1986년도 하계학술대회논문집
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• pp.591-594
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• 1986

An asymptotic solution of electro-magnetic waves diffracted by a dielectric wedge of the angle larger than $180^{\circ}$ is obtained in case of the incidence of a E-polarized plane wave. Based on the dual integral equation in the spectral domain, physical optics approximation is supplemented by correction currents distributed along the interfaces. Those currents are expanded in a series of Bessel functions, known as Neumann's expansion of which fractional order is chosen to satisfy the static edge condition as the limiting value of dynamic case. Numerical results of edge diffraction patterns and field patterns are presented for some typical cases.

• 반도체디스플레이기술학회지
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• 제14권3호
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• pp.1-5
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• 2015

In photolithography process, resolution enhancement techniques such as optical proximity correction (OPC) and phase shift mask (PSM) have been applied to improve resolution. Especially, sub-resolution assist feature (SRAF) is one of the most important OPC to enhance image quality including depth of focus (DOF). However, imaging performance of the mask could be varied with the diffraction order amplitude changed by inserting SRAF. Therefore, in this study, we investigated the imaging properties and process margin of attenuated PSM with SRAF. Reflectivities of attenuated PSMs at 13.5 nm were 3, 6, 9% and simulation was performed by $PROLITH^{TM}$. As a result, aerial image properties and DOF as well as diffraction efficiency were improved by increasing the reflectivity of attenuated PSM. Additionally, printed critical dimension variations depending on SRAF width and space error were also reduced for attenuated PSM with high reflectivity. However, SRAF could be printed when reflectivity of attenuated PSM is high enough. In conclusion, optimization of reflectivity of attenuated PSM and SRAF to prevent side-lobe from being printed is needed to be considered.

• Applied Microscopy
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• 제25권2호
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• pp.73-79
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• 1995

The oxidation of silicon wafers is an essential step in the fabrication of semiconductor devices. It is known to induce degradation of electrical properties and lattice strain of Si substrate from thermal oxidation process due to charged interface and thermal expansion mismatch from thermally grown SiO, film. In this study, convergent beam electron diffraction technique is employed to directly measure the lattice strains in Si(100) and $4^{\circ}$ - off Si(100) substrates with thermally grown oxide layer at $1200^{\circ}C$ for three hours. The ratios of {773}-{973}/{773}-{953} Higher Order Laue Zone lines were used at [012] zone axis orientation. Lattice parameters of the Si substrate as a function of distance from the interface were determined from the computer simulation of diffraction patterns. Correction value for the accelerating voltage was 0.2kV for the kinematic simulation of the [012]. HOLZ patterns. The change in the lattice strain profile before and after removal of oxide films revealed the magnitudes of intrinsic strain and thermal strain components. It was shown that $4^{\circ}$ -off Si(100) had much lower intrinsic strain as surface steps provide effective sinks for the free Si atoms produced during thermal oxidation. Thermal strain in the Si substrate was in compression very close to the interface and high concentration of Si interstitials appeared to modify the thermal expansion coefficient of Si.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.354-358
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• 2000

The SnO$_2$film was deposited on a corning glass 1737 substrate by plasma enhanced chemical vapor deposition using a gas mixture of SnCl$_4$, $O_2$, and Ar. The film thickness was measured using $\alpha$-step and was about 9400$\AA$. The conventional X-ray diffractometry and pole figure attachment were used to refine the crystal structure of SnO$_2$ thin film. Six pole figures, (200), (211), (310), (301), (321), and (411), were measured with CoK$_\alpha$ radiation in reflection geometry. The X-ray diffraction data were measured at room temperature using CuK$_\alpha$ radiation with graphite monochromator. The agreement between calculated and observed patterns for the normal direction of SnO$_2$ thin film was not satisfactory due to the severely preferred orientation effect. The Rietveld refinement of heavily textured SnO$_2$ thin film was successfully achieved by adopting the pole density distribution of each reflection obtained from the inverse pole figure as a correction factor for the preferred orientation effect. The R-weighted pattern, R$_wp$, was 15.30%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.479-480
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• 2005

The Analog data is impossible to perfect reconstruct original data at a hologram data storage because of noise such as cross talk. So it is necessary that data can be stored by digital signal unavoidably. Therefore this work deals with experiments from this point of view through writing & reading of digital data. We stored 256bit digital data at one point on As-Ge-Se-S chalcogenide thin film and we reconstruct original data of 100% through the specified algorithm such as the histogram equalization, the interactive correction, etc. This result shows that the data is able to reconstruct under relative low diffraction efficiency. As the result, we expect the possibility of chalcogenide thin film for HDDS as the analysis of the effective resolution refer to reconstruction rate and diffraction efficiency.

• Current Optics and Photonics
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• 제7권2호
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• pp.213-221
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• 2023

The optical window, as a part of the collimator system, is the connector between the outside light source and the optical system inside a vacuum tank. The temperature and pressure difference between the two sides of the optical window cause not only thermoelastic deformation, but also refractive-index irregularities. To suppress the influence of these two changes on the performance of the collimator system, thermo-optical analysis is employed. Coefficients that characterize the deformations and refractive-index distributions are derived through finite-element analysis, and then imported into the collimator system using a user-defined surface in ZEMAX. The temperature and pressure difference imposed on the window seriously degrade the system performance of the collimator. A decentered and tilted lens group is designed to correct both field aberrations and the thermal effects of the window. Through lens-interval adjustment of the lens group, the diffraction-limited performance of the collimator can be maintained with a vacuum level of 10^-5 Pa and inside temperature ranging from -100 ℃ to 20 ℃.