• Title/Summary/Keyword: Dielectric-metal-dielectric multilayer

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Characterization of Dielectric Relaxation and Reliability of High-k MIM Capacitor Under Constant Voltage Stress

  • Kwak, Ho-Young;Kwon, Sung-Kyu;Kwon, Hyuk-Min;Sung, Seung-Yong;Lim, Su;Kim, Choul-Young;Lee, Ga-Won;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.5
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    • pp.543-548
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    • 2014
  • In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.

High-efficiency Organic Light-emitting Diodes(OLEDs) with optimized multilayer transparent electrodes

  • Yun, Chang-Hun;Cho, Hyun-Su;Yoo, Seung-Hyup
    • Journal of Information Display
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    • v.11 no.2
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    • pp.52-56
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    • 2010
  • High-efficiency organic light-emitting diodes (OLEDs) based on multilayer transparent electrodes (MTEs) are reported. The dielectric/metal/dielectric (DMD) multilayer electrode based on a thin silver layer achieved high sheet conductance as small as $6{\Omega}/sp$ and a tuning capability in the optical and electrical properties by engineering the inner and outer dielectric layers. In the conventional normal bottom-emitting structure, a DMD-based OLED can be fabricated with 90% higher forward luminous efficiency and 30% higher external quantum efficiency (EQE) compared to ITO-based devices. Special attention was paid to the optimization method of such MTE structure considering both the injection and optical structures.

Improved Electrical Properties of Indium Gallium Zinc Oxide Thin-film Transistors by AZO/Ag/AZO Multilayer Transparent Electrode

  • No, Yeong-Su;Yang, Jeong-Do;Park, Dong-Hui;Wi, Chang-Hwan;Jo, Se-Hui;Kim, Tae-Hwan;Choe, Won-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.443-443
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    • 2012
  • We fabricated a-IGZO TFT with AZO/Ag/AZO transparent multilayer source/drain contacts by rf magnetron sputtering. Enhanced electrical device performance of a-IGZO TFT with AZO/Ag/AZO multilayer S/D electrodes (W/L = = 400/50 mm) was achieved with a subs-threshold swing of 3.78 V/dec, a minimum off-current of 10-12 A, a threshold voltage of 1.80 V, a field effect mobility of 10.86 cm2/Vs, and an on/off ration of 9x109. It demonstrated the potential application of the AZO/Ag/AZO film as a promising S/D contact material for the fabrication of the high performance TFTs.

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Fabrication and Electrical Properties of PZT/BFO Multilayer Thin Films

  • Jo, Seo-Hyeon;Nam, Sung-Pil;Lee, Sung-Gap;Lee, Seung-Hwan;Lee, Young-Hie;Kim, Young-Gon
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.5
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    • pp.193-196
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    • 2011
  • Lead zirconate titanate (PZT)/ bismuth ferrite (BFO) multilayer thin films have been fabricated by the spin-coating method on Pt(200 nm)/Ti(10 nm)/$SiO_2$(100 nm)/p-Si(100) substrates using $BiFeO_3$ and $Pb(Zr_{0.52}Ti_{0.48})O_3$ metal alkoxide solutions. The PZT/BFO multilayer thin films show a uniform and void-free grain structure, and the grain size is smaller than that of PZT single films. The reason for this is assumed to be that the lower BFO layers play an important role as a nucleation site or seed layer for the formation of homogeneous and uniform upper PZT layers. The dielectric constant and dielectric losses decreased with increasing number of coatings, and the six-layer PZT/BFO thin film has good properties of 162 (dielectric constant) and 0.017 (dielectric losses) at 1 kHz. The remnant polarization and coercive field of three-layer PZT/BFO thin films were 13.86 ${\mu}C/cm^2$ and 37 kV/cm respectively.

Multilayer transparent electrodes for flexible and inverted-geometry OLEDs

  • Yoo, Seung-Hyup;Yun, Chang-Hun;Park, Jae-Woo;Cho, Hyun-Su
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1019-1021
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    • 2008
  • Multilayer transparent electrodes (MTE) based on an ultrathin metal layer assisted by additional dielectric or semiconducting layers are investigated as electrodes in OLEDs including an inverted geometry. A special attention is paid to their tuning capability in injection behavior and to their potential for ultra-flexible electrodes.

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A Study on the Electrical Properties of Organic Ultra Thin Films for Nanoscale Device Manufacture (나노스케일 소자제작을 위한 유기초박막의 전기적특성에 관한 연구)

  • Song, Jin-Won;Han, Chang-Su;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.384-385
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    • 2005
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of mono layers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed a and the molecular area $A_m$. Compression speed a was about 30, 40, 50mm/min. also, LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9 ~ 21 and we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V.

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Structural and electrical properties of K(Ta0.62Nb0.38)O3/BiFeO3 multilayer films for electrocaloric devices

  • Jeong-Eun Lim;Myung-Gyu Lee;Byeong-Jun Park;Sam-Haeng Lee;Joo-Seok Park;Young-Gon Kim;Sung-Gap Lee
    • Journal of Ceramic Processing Research
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    • v.23 no.5
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    • pp.583-588
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    • 2022
  • KTN/BFO multilayer films were manufactured using the spin-coating method on Pt/Ti/SiO2/Si substrate with KTN(62/38) andBFO metal alkoxide solutions. The mean thickness of the multilayer films was about 420-450 nm. A rough interfacial layerwas observed at the interface between the lower substrate and the film when sintered at 650oC. Dense microstructures withoutpores inside of the films were shown via TEM analysis, and an interface between the KTN and BFO layers was clearlyobserved. The Curie temperature was about 16oC. Dielectric constant and dielectric loss were 1380 and 0.384 at 20oC,respectively. Coercive field of the 2-layer and 6-layer films were 72.6 and 80.4 kV/cm at room temperature, respectively. ΔTand EC coefficient of the 6-layer films sintered at 630oC were 1.96oC and 0.13×10-6 oCmV-1, respectively.

Experimental and Simulation Study of the Optical Performances of a Wide Grid Polarizer as a Luminance Enhancement Film for LCD Backlight Applications

  • Seo, Jae Seok;Yeom, Tae Eun;Ko, Jae-Hyeon
    • Journal of the Optical Society of Korea
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    • v.16 no.2
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    • pp.151-156
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    • 2012
  • Reflective polarizers can be used as luminance enhancement films for LCD backlights via the polarization recycling process. The optical performances of a wire grid polarizer (WGP) as a reflective polarizer adopted in edge-lit backlights were investigated by luminance evaluation and a time-domain simulation technique. The results were compared to those of a commercial dielectric multilayer film. The luminance gain factor of WGP was smaller than that of the multilayer film by 18%. This was attributed to a much larger internal loss of WGP due to light absorption by metal wires. The internal losses of both reflective polarizers and the polarization conversion efficiency of the backlight were obtained numerically based on a phenomenological model. The optical performances of WGP were optimized by using a time-domain simulation technique. The luminance gain increased and was found to become comparable to, but slightly less than the case of the dielectric multilayer film with decreasing line width.

Electrical and Optical Properties of Asymmetric Dielectric/Metal/Dielectric (D/M/D) Multilayer Electrode Prepared by Radio-Frequency Sputtering for Solar Cells

  • Pandey, Rina;Lim, Ju Won;Lim, Keun Yong;Hwang, Do Kyung;Choi, Won Kook
    • Journal of Sensor Science and Technology
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    • v.24 no.1
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    • pp.15-21
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    • 2015
  • Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

Enhanced evanescent field force on Mie particles by coupling with surface plasmons (표면 플라즈몬과 결합된 에바네슨트파가 Mie입자에 미치는 광압 분석)

  • Song, Young-Gon;han, Bong-Myung;Chang, Soo
    • Korean Journal of Optics and Photonics
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    • v.12 no.6
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    • pp.437-445
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    • 2001
  • We examine theoretically the properties of the force on Mie particles induced by evanescent fields at a system of multilayer films (including a metal film), at which the surface plasmon resonance is excited by a p-polarized plane electromagnetic wave. An expression of the surface plasmon-coupled evanescent fields produced in Kretschmann (or Sarid) geometry is expanded in terms of vector spherical wave functions, while multiple reflections between the Mie particle and the metal boundary are taken into account. The Cartesian components of the force on Mie particles by the evanescent fields are analytically formulated and numerically evaluated. The force components are increased by one or two orders of magnitude at metal boundaries over those at dielectric boundaries. As a result, we can confirm the possibility of stable manipulation or rotation of a finite-sized object by forces of surface plasmon-coupled evanescent fields.

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