• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.2 no.2
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• pp.63-68
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• 2009

We study on the transient response in non-uniform microstrip lines with optically controlled microwave pulses. The transient response of the microwave pulses in plasma layer has been evaluated by reflection function of dielectric microstrip lines. The variation of characteristic response in plasma layer with localized pulses has been evaluated analytically. Reflection the change of the reflection amplitude has been observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.399-400
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• 2008

The light efficiency of fringe-field switching (FFS) mode when using a liquid crystal (LC) with positive dielectric anisotropy was found to be dependent on the magnitude of dielectric anisotropy, such that the lower dielectric anisotropy, the higher. We studied out not only light efficiency but also response time according to dependence on the magnitude of dielectric anisotropy. Rising and decay time became fast and slow respectively according to decreasing the magnitude of dielectric anisotropy. This paper investigates electro-optical characteristic of FFS mode using LC with a positive dielectric anisotropy dependent on the magnitude of dielectric anisotropy of the LC.

• Macromolecular Research
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• v.10 no.4
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• pp.215-220
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• 2002

The electrorheological (ER) and dielectric behaviors of the polypyrrole(PPy)-coated poly(ethyl methacrylate)(PEMA) suspensions in mineral oil were investigated. PPy was coated on PEMA particles to enhance the particle polarization, which would lead to the enhanced ER response. Various PPy-coated PEMA particles were synthesized by controlling the oxidant amount during the pyrrole polymerization, and the ER responses of their suspensions were investigated. The ER response initially increases with the oxidant amount, passes through a maximum, and then decreases with the oxidant amount. The initial increase in the ER response with oxidant amounts is due to the enhanced particle polarization with the increased particle surface conductivity. The dielectric properties of the corresponding suspensions support that the ER enhancement arises from the enhanced particle polarization. The decrease in the ER response at large oxidant amounts seems to arise from the increased conduction between the PPy-coated PEMA particles.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1283-1288
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• 2015

In general, IC chip circuit which is operating a cryptographic computation tends to radiate stronger electromagnetic signal to the outside. By using a power detecter such as a loop antenna near cryptographic device, the encryption key can be identified by probing a electromagnetic signal. To implement a method against non-invasive type attack, multi dielectric slab structure on IC chip to suppress radiated electromagnetic signal was introduced. Multiple dielectric slab was implemented by suitably configured to have the Bragg reflection characteristics, and then the reflection response was computed and verified its effectiveness. As a result, the thickness of the dielectric coating was 2mm and the reflection response characteristics for the vertical incidence was achieved to be 91% level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.119-122
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• 2003

This paper describes characteristics for insertion losses of Isolator have an effect on material parameter. One purpose of the paper is to present insertion loss on this resonator for magnetic loss, dielectric loss, magnetic field and saturation magnetization. Another is to study the effect of propeller resonator on response characteristics. In this paper, the analysis and measurement of the response characteristics were carried out for the isolator prototype. The measurement results agreed on the simulation results and acquire insertion loss $0.18\;{\sim}\;0.24dB$, return loss 27dB, isolation 27dB and bandwidth 500MHz on this condition saturation magnetization 550G, dielectric loss 0.0004, magnetic loss 20 and dielectric constant 14.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.397-401
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• 2011

The response of lightning impulse voltage was explored in dielectric liquids employing hydrodynamic modeling with three charge carriers using the finite element method. To understand the physical behavior of discharge phenomena in dielectric liquids, the response of step voltage has been extensively studied recently using numerical techniques. That of lightning impulse voltage, however, has rarely been investigated in technical literature. Therefore, in this paper, we tested impulse response with a tip-sphere electrode which is explained in IEC standard #60897 in detail. Electric field-dependent molecular ionization is a common term for the breakdown process, so two ionization factors were tested and compared for selecting a suitable coefficient with the lightning impulse voltage. To stabilize our numerical setup, the artificial diffusion technique was adopted, and finer mesh segmentation was generated along with the axial axis. We found that the velocity from the numerical result agrees with that from the experimental result on lightning impulse breakdown testing in the literature.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.535-542
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• 1995

The effect of sintering temperature, sintering time and forming pressure on microwave dielectric properties of (Zr1-xSnx)TiO4 ceramics containing 1.0wt% B2O3, 0.3 wt% La2O3 and 1.0wt% NiTa2O6 was investigated using the response surface methodology. The optimum values of processing variables were determined based on the reproducibility. The optimum values of the dielectric constant of >35. Q.f0 of >55000 and $\tau$f=$\pm$5 ppm/$^{\circ}C$ could be obtained when the sample was pressed at 500~600kg/$\textrm{cm}^2$ and sintered at 1500~155$0^{\circ}C$ for 2~3 hrs.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.753-756
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• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.413-416
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• 2002

The dielectric responses of 10 and 40 wt% siloxane-epoxy copolymers were investigated in temperature range near the glass transition of polydimethylsiloxane at which the dielectric transitions were also observed. On the other hand, the pure epoxy did not show any dielectric transition in measurement temperature range -90 to 150 $^{\circ}C.$ The experimental data showed that for the copolymer investigated, the temperature-frequency super-position principle could be applied to the dielectric response. From the Cole-Cole equation, the dielectric relaxation of the 10 wt% siloxane near the glass transition temperature resulted in a broad distribution with ${\beta}=$ 0.19 and the relaxation time at -70 $^{\circ}C$ was 5.3 ${\times}$ $10^{-2}$s. The glass transition temperature, 188 K, was estimated by using WLF relation, which was consistent with the data presented in experiment.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.491-491
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• 2011

Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.