• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.25-25
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• 2005

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.430-435
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• 2007

This paper describes the results of electrical characteristics assessment for organic insulations of polyethylene(PE) series insulations and acrylonitrile butadiene styrene copolymer(ABS). In the experiment, 4 kinds of specimens by composition density were tested in relative permittivity, specific resistance and tracking duration. A WinDETA system and a tracking test set manufactured for this assessment were used to measure the dielectric parameters and tracking duration, respectively. In measuring the tracking duration, the time from testing voltage application to testing circuit breaking due to the tracking current was measured. As a result, dielectric dispersion was observed in measuring the relative permittivity of ABS. It was confirmed that the relative permittivity decreased with the density of the PE series insulations and it depends rather on the temperature than frequency. In most specimens, specific resistance exponentially decreased with frequency and the result for each specimen was almost similar. By the way, in the tracking test, all the PE series insulations showed more excellent performance than ABS and especially in the case of HDPE, its tracking withstand performance was the best.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.326-326
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• 2007

Influence of $Nd_2O_3$ addition to $ZnO-B_2O_3$-based glass on the water leaching resistance of the glass was first investigated. The optimized $Nd_2O_3-ZnO-B_2O_3$ (NZB) glass was ball milled for varying time, mixing with followed by $Al_2O_3$ crystalline phase to form $Al_2O_3$-NZB glass composites at $875^{\circ}C$ for 1h. Microwave dielectric properties of the composites were investigated as a function of the ball milling time of the NZB glass. Dielectric constant and quality factor were 5.70 and 9497 GHz, respectively, when the NZB glass was ball milled for 6h prior to mixing with $Al_2O_3$.

• 한국전기전자재료학회논문지
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• 제21권5호
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• pp.440-446
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• 2008

To manufacture the MLCC with X7R for high voltage stability, $BaTiO_3-MgO-MnO_2-Y_2O_3$ with $(Ba_{0.4}Ca_{0.6})SiO_3$ glass frit was formulated. Based on this composition, the addition of $Er_2O_3$ showed that TCC(Temperature Coefficient Capacitance) at $85^{\circ}C$ was improved from 5 % to ${\sim}0\;%$, but the dielectric constant and IR (Insulation Resistance) were decreased. The glass frit improved the dielectric constant and IR, so the appropriate contents of $Er_2O_3$ and glass frit were 0.6 mol% and 1 wt%, respectively. It showed that the dielectric constant and RC constant were 2,550 and 2,000 (${\Omega}F$), respectively in the sintering condition at $1250^{\circ}C$ in PO2 $10^{-7}$ Mpa. The MLCC with $3.2{\times}1.6$ (mm) size and $1\;{\mu}F$ was also suited for X7R with the above composition.

• 전기학회논문지
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• 제64권12호
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• pp.1724-1729
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• 2015

Chlorosulfonated polyethylene (CSPE) was not flooded seawater and flooded seawater & freshwater for 5 days, respectively, and these samples are referred to as BSF(before seawater flooding) and ASFF(after seawater & freshwater flooding), respectively. The apparent density, dissipation factor, relative permittivity, melting temperature, dielectric breakdown time and increased time of applied voltage are higher than those of BSF, but the insulating resistance, dielectric strength, percent elongation and glass transition temperature of ASFF are lower than those of BSF. The differential temperature of those is $0.026{\sim}0.028(^{\circ}C)$ after AC and DC voltage is applied to ASFF, respectively, and the differential temperature of those is $0.013{\sim}0.037(^{\circ}C)$ after AC and DC voltage is applied to BSF, respectively. In the case AC and DC voltage is applied to ASFF as well as BSF, the variations in temperature of AC voltage are higher than those of DC voltage. It is investigated that dielectric loss due to dissipation factor ($tan{\delta}$) is related to electric dipole conduction current. It is certain that the ionic (electron or hole) leakage current was increased by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$, those are related to cured atoms of O and S that relatively increased after seawater flooding.

• 한국진공학회지
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• 제7권3호
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• pp.267-267
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• 1998

ECR plasma CVD를 이용한 SiOF박막은 낮은 유전상수를 가지고 있으며, 기존의 공정과의 정합성이 우수해 다층배선 공정에 채용이 유망한 재료이지만 수분의 흡수로 인한 유전율의 상승과 후속공정의 안정성이 문제점으로 부각되고 있다. 따라서 본 연구에서는 SiOF박막의 내흡습성과 후속공정에서의 안정성을 향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 300℃일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각 된다.봉？향상시키기 위하여 SiOF박막을 증착한 후 후속 산소 플라즈마 처리를 행하였다. SiOF박막은 산소 플라즈마 처리를 수행함으로써 SiOF박막의 밀도가 증가하고, 수분과의 친화력이 강한 Si-F 결합이 감소하는 것이 주요한 원인으로 사료된다. 하지만 플라즈마 처리 시간이 5분 이상으로 증가하면 유전율의 증가가 일어난다. 따라서 본 실험에서는 산소 플라즈마 처리조건이 마이크로파 전력이 700W, 공정 압력이 3mTorr, 기판온도가 300℃일 경우 플라즈마 처리시간은 3분이 적당한 것으로 생각된다.

• Progress in Superconductivity
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• 제13권2호
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• pp.97-104
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• 2011

유전체 공진기법을 이용하여 초전도체 박막의 표면저항을 측정할 경우, 공진기의 $Q_U$로부터 초전도체 박막의 표면저항을 구하기 위해 알아야 하는 G-factor를 시뮬레이션과 전자기장 해석을 이용해서 구한 후 두 값을 비교하였다. 시뮬레이션 과정에서 사용된 mesh 수가 증가할수록 시뮬레이션으로 구한 G-factor의 크기와 전자기장 해석을 통해 얻은 값 간의 차이가 줄어들게 됨을 확인하였다. 공진기에 따라 mesh 수 증가에 따른 G-factor의 정확도 증가가 조금씩 다르게 나타났는데, 이는 공진기와 유전체의 크기에 따라 simulation program이 계산하는 개당 mesh의 크기가 각기 다르기 때문으로 여겨진다. 19.6 GHz의 공진주파수를 지닌 사파이어 공진기의 경우 시뮬레이션과 전자기장 해석을 통해 구한 G-factor의 차이를 이용하여 표면저항의 불확도 추정치를 온도의 함수로 구했으며 $Q_U$를 2 % 이내의 상대 불확도로 측정할 경우 G-factor의 불확도 변화에 따른 표면저항의 상대 불확도 변화를 확인하였다. 본 연구 결과는 전자기장 해석이 매우 어렵거나 불가능한 구조의 유전체 공진기 (예로서 open-ended 평행판 유전체 공진기)의 G-factor를 시뮬레이션을 이용하여 구하여 초전도체 박막의 표면저항을 $Q_U$로부터 측정하고자 할 때 측정 온도 구간에서 허용되는 표면저항의 불확도를 고려하여 G-factor의 시뮬레이션 시 사용되는 mesh 수가 결정되어야 함을 보여준다.

• Progress in Superconductivity
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• 제11권2호
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• pp.106-111
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• 2010

Sapphire resonators with $YBa_2Cu_3O_{7-\delta}$ (YBCO) endplates have provided a way to realize extremely high quality factor due to the extremely low dielectric loss of sapphire and conductive loss of YBCO films, which enables to measure the low surface resistance of superconductor films at microwave frequencies. We present microwave properties of HTS sapphire resonators designed for measuring the surface resistance of HTS films at millimeter-wave frequencies by using the two-resonance mode dielectric resonator method. Despite enhanced surface resistance ($R_S$) of YBCO films due to the quadratic frequency dependence of the $R_S$, the unloaded quality factor ($Q_0$) of the $TE_{021}$ mode sapphire resonator still appears to be well above $1\;{\times}\;10^6$ at a mm-wave frequency of 38 GHz at 10 K. However, it appears that the $TE_{012}$ mode $Q_0$ is unexpectedly low despite that the corresponding resonance peak looks uncoupled with parasitic modes. We discuss possible reasons for the unexpected results using the surface resistance at the $TE_{021}$, $TE_{012}$, and $TE_{011}$ mode frequencies.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 1995년도 봄 학술발표회 논문집
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• pp.118-123
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• 1995

Evaluating the moisture content for sand is useful for quality cotnrol of concrete. If water content of evaluate instantly and apply for mix proportion sand of concrete, in mixing propertion of concrete, it can makes to improve of concrete quality. In this study, the evaluating method for moisture content of sand, using the electric velocity and dielectric constant was proposed as a study of quality control of concrete. The obtained results are summarized as follow. The resistance ratio was decreased as the increase of moisture content The dielectric constant was decreased as the sand of the moisture content increase.