• 한국진공학회지
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• 제7권4호
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• pp.368-373
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• 1998

초고집적 회로의 미세화에 따라 다층배선에서 기생저항(parasitic resistance)과 정전 용량의 증가는 RC시정수(time constant)의 증가로 인하여 소자의 동작속도를 제한하고 있 다. 이로 인하여 발생되는 배선지연의 문제를 해결하기 위하여 매우 낮은 유전상수를 갖는 층간 절연물질이 필요하다. 이러한 저유전상수 층간절연물질로서 현재 유기계 물질중의 하 나인 a-C:F이 주목받고 있는 물질이다. 본 연구에서는 ECRCVD를 이용하여 a-C:F박막과 Si기판사이의 밀착력을 향상시키기 위하여 a-C:H박막을 500$\AA$증착한 후 a-C:F을 증착전력 500W에서 원료가스의 유량비($C_2F_6, CH_4/(C_2F_6+CH_4)$))를 0~1.0까지 변화시키면서 상온에서 증착하 였다. a-C:F박막의 특성은 SEM, FT0IR, XPS, C-V meter와 AFM등을 이용하여 두께, 결 합상태, 유전상수, 표면형상 및 표면 거칠기를 관찰하였다. a-C:F박막에서 불소함량은 가스 유량비가 1.0일 경우에는 최대 약31at.%정도 검출되었으며, 가스 유량비가 증가됨에 따라 증 가하였다. 또한 유전상수는 a-C:H의 유전상수 $\varepsilon$=3.8에서 $\varepsilon$=2.35까지 감소하였다. 이는 영 구 쌍극자 모멘트가 1.5인 C-H결합은 감소하고 영구 쌍극자 모멘트가 0.6, 0.5인 CF, CF2결 합이 증가하였기 때문이다. 하지만 $400^{\circ}C$에서 질소분위기로 1시간 동안 furnace열처리 후에 가스유량비가 1.0인 a-C:F박막에서 불소의 함량이 감소하여 C-F결합이 줄어들었다. 이로 인하여 유전상수가 열처리전의 2.7에서 열처리후 3.2까지 상승하였다.

• 폴리머
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• 제33권1호
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• pp.39-44
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• 2009

폴리페닐렌에테르[PPE, poly(phenylene ether)]를 기저수지로 사용하고, 가교제로 N,N'-m-phenylene-dimaleimide(PDMI), 난연제로 decabromodiphenylethane을 첨가하여 고분자 기판을 제작하였으며, 가교제와 난연제가 기판소재의 유전특성 등 물리적 특성에 미치는 영향을 고찰하였다. 개시제의 유무에 따른 PDMI의 열경화 특성을 DSC를 이용하여 분석하였으며, 이를 바탕으로 PPE-PDMI 테스트 조성을 설계하였다. 복합물 시트를 필름 코터로 성형한 후, 진공가압적층하여 테스트 기판을 제작하고, FDMI와 난연제의 함량에 따른 유전율, 유전손실, peel 강도, 납 내열성 및 난연성을 평가하였다. 유전율과 유전손실은 PDMI와 난연제의 함량에 따라 대체로 증가하는 경향을 나타내었으나, 납 내열성과 난연성은 개선된 결과를 나타내었다. Peel 강도는 PDMI가 10 wt% 이상 첨가되면 1 kN/m 이상의 높은 값을 나타내었지만, 난연제의 첨가량에 따라서는 소폭 감소하는 경향을 보였다. Gel content 측정결과로부터, PPE-PDMI의 반응 메카니즘은 semi-IPN 구조의 형성보다는 PPE와 PDMI의 crosslinking에 의한 망상구조 형성에 더 가까운 것으로 판단되었다. 최종적으로 1 GHz에서 유전율이 2.52$\sim$2.65, 유전손실이 0.002 미만으로 작은 고주파 대역용 고분자 복합체 기판소재를 얻을 수 있었다.

• 한국재료학회지
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• 제13권4호
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• 한국세라믹학회지
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• 제24권3호
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• pp.270-276
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• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.77-85
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• 2005

Impedance spectroscopy was applied to low temperature polycrystalline Si in order to investigate the electrical/dielectric information in polycrystalline Si. By combined microstructure and impedance spectroscopy works, it was shown that the electrical information is sensitive to the corresponding microstructure, i.e., the grain size and distribution, judged from the capacitance vs. grain size relationship. At $360 mJ/cm^2$, the maximum in capacitance and the minimum in resistance correspond to the largest grain sizes of unimodal distribution in polycrystalline Si. The electrical/dielectric characterization is compared with Raman spectroscopic characterizations in terms of microstructure.

• 한국세라믹학회지
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• 제43권3호
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• pp.156-161
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• 2006

Impedance spectroscopy was applied to the initial hydration of calcium phosphate bone cements in order to investigate the electrical/dielectric properties. Hydration or equivalently setting was monitored as a function of the amount of water and initial powder characteristics. Higher amounts of water produced more open microstructures, leading to higher conductivity and enhanced dielectric constant. The effects of the initial characteristics in the powder were investigated using bone cement powder prepared with and without granulation. Granulated powder exhibited a significant change in resistance and produced a higher dielectric constant than those of conventional powder. Through a simplified modeling, the effects of thickness in reaction products and pore sizes were estimated by the frequency-dependent impedance measurements. Furthermore, impedance spectroscopy was proven to be a highly reliable tool for evaluating the continuous change in pore structure occurring in calcium phosphate bone cements.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.254-255
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• 2008

In this study, electrical properties of polyethylene of raised temperature resistance (PE-RT) have been studied through an examination of AC conductivity, dielectric constant, and space charge distributions. A dielectric constant was investigated by Dielectric Analyzer (DEA). Measurements of space charge distributions for PE-RT were carried out using Pulsed Electroacoustic (PEA) techniques, and it was possible to observe the negative charge near the cathode overlapped with the positive induced charge peak, the polarity of which remains unchanged after a short circuit.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.252-253
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• 2005

The dielectric relaxation properties of $^{60}Co$ gamma-ray irradiated Poly(vinylidene fluoride) (PVDF) containing various antioxidants have been investigated for radiation degradation. Cole-Cole's circular arcs were induced from the results of temperature and frequency dependency of dielectric properties with radiation dose. The magnitude of polarization of PVDF was decreased by adding antioxidants. The values of dielectric relaxation intensity calculated by using the Cole-Cole's circular arcs showed a certain tendency for radiation degradation.

• Macromolecular Research
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• 제14권1호
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• pp.1-33
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• 2006

Polyimides (PIs) exhibit excellent thermal stability, mechanical, dielectric, and chemical resistance properties due to their heterocyclic imide rings and aromatic rings on the backbone. Due to these advantageous properties, PIs have found diverse applications in industry. Most PIs are insoluble because of the nature of the high chemical resistance. Thus, they are generally used as a soluble precursor polymer, which forms complexes with solvent molecules, and then finally converts to the corresponding polyimides via imidization reaction. This complexation with solvent has caused severe difficulty in the characterization of the precursor polymers. However, significant progress has recently been made on the detailed characterization of PI precursors and their imidization reaction. On the other hand, much research effort has been exerted to reduce the dielectric constant of PIs, as demanded in the microelectronics industry, through chemical modifications, as well as to develop high performance, light-emitting PIs and liquid crystal (LC) alignment layer PIs with both rubbing and rubbing-free processibility, which are desired in the flat-panel display industry. This article reviews this recent research progresses in characterizing PIs and their precursors and in developing low dielectric constant, light-emitting, and LC alignment layer PIs.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.587-593
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• 1995

Silicone oils used insulating substances exhibit the both of organic and inorganic properties, and it has many superior characteristics such as the high thermal resistance and low thermal oxidation level when compared to other insulation oils. In order to investigate the dielectric loss due to the increase of viscosity, silicone oils of viscosity 1, 2, 5[cSt] had been chosen as the specimen and experiment has been performed in the temperature range of -70[.deg. C] - 65[.deg. C] and frequency range of 30 - 1*10$\^$5/[Hz]. As a result, the linear decrease of loss at low frequency region in high temperature was due to the influence of applying frequency, whereas the increase of loss at high frequency region was contributed by electrode's resistance. And increasing viscosity, the activation energy increased from 3.77[kcal/mole] to 7.21[kcal/mole]. The dipole moment of specimen was become clear 1.48 - 2.26[debyel in high temperature region(5 - 65[.deg. C]) and 1.05 - 1.80[debye] in low temperature region (-70 - -25[.deg. C])respectively.