• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• Proceedings of the KIEE Conference
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• 2008.09a
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• pp.207-210
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• 2008

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4}$, $2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan6 of XLPE/semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan6 was small. Also, To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.9 no.6
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• pp.534-538
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• 2016

This paper discusses the characteristics and effects of dielectric inner-supports on discone antenna for broadband RF test chamber, and the verification has been performed by simulation. Several design parameters such as the thickness of the gap support, the position of the side support, and the thickness of the side support has been analyzed. The thickness of the gap support affected the reflection coefficient. An effect of the offset of the side support from the center was slight below 3 GHz and significant above 3 GHz. The thickness of the side support did not affect the reflection coefficient or the gain much. The performance of the fabricated discone antenna was in good agreement with the simulated results. This investigation of a dielectric support effects could be used to design a commercial discone antenna for broadband RF test chamber, focusing on electrical performance and mechanical stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.263-266
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• 2001

In this paper, we investigated dielectric properies for BST thin films that was deposited on MgO/Si substrates using RF magnetron sputtering. In here, MgO film was used to perform that a diffusion b arrier between the BST film and Si substrate and a buffer layer to assist the BST film growth. A d eposition condition for MgO films was RF Power of 50W, substrate temperature of room temperature and the working gas ratio of Ar:O$_2$ were varied from 90:10 to 60:47. Finally we manufactured the cap acitor of Al/BST/MgO/Si/Al structure to know electrical properties of this capacitor through I-V, C-V measurement. In the results, C-V aha racteristic curves was shown a ferroelectric property so we measured P-E. A remanent poliazation and coerceive electric field was present 2$\mu$C/cm$^2$ and -27kV/cm respectively at Ar:O$_2$=90:10. And a va clue of dielectric constant was 86 at Ar:02=90:10.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.299-302
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• 2001

In this study, we are studied the electrical conduction and dielectric breakdown properties of insulating varnish. In order to analyze the molecular structure and physical properties of insulating varnishs, FT-lR was used. As the result, it can be confirmed that the peak of alcoholic group appeared in wavenumbers 3452[cm$\^$-1], the peak of =CH appeared in 3080[cm$\^$-1] and the peak of -CH appeared in 2919[cm$\^$-1] respectively. The following results were obtained from electrical properties of insulating varnish. The amplitude of current density was decreased by thickness increasing and the current density was effected by the thermal energy from external due to temperature increasing. In study temperature dependence of dielectric strength, the specimen of 10[$\mu\textrm{m}$] thickness was measurement from room temperature to 180[$^{\circ}C$]. It is confirmed that the temperature regions below 60[$^{\circ}C$] is due to electron avalanche breakdown and the temperature regions over 60[$^{\circ}C$] is due to free volume breakdown which makes electron movements easy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1136-1139
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz~40GHz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose permittivity is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.543-549
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• 2006

Polyimides (PI) are treated with $He/O_2$ and $He/O_2/NF_3$ atmospheric pressure rf dielectric barrier discharge in order to investigate the roles of $NF_3$ that is one of the PI etching gases. Surface changes are analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurement. The surface roughness of PI and the ratio of C=O, which is hydrophilic functional group, is more increased by $He/O_2/NF_3$ discharge than by $He/O_2$ discharge. The C=O species on the PI surface is increased up to 30 percent with rf power. The surface roughness of PI is increased from 0.4 to 11 nm with rf power. The water drop contact angles on PI, however, are reduced from $65^{\circ}\;to\;9^{\circ}$ by plasma treatment independently of $NF_3$.

• Journal of IKEEE
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• v.23 no.4
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• pp.1473-1476
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• 2019

Accurate material information is very important in PCB (Printed Circuit Board) design. In an integrated mast of a battleship, heat reduction is essential for stealth functionality. So heat dissipation from internal control equipments should be reduced as much as possible. Control equipments mostly consist of PCBs, but it often suffers from impedance mismatching due to imprecise Dk (Dielectric Constant), which significantly increases heat dissipation. In this paper, measurement methods of Dk is investigated. Also, effects on impedance mismatch by Dk variation with operating frequency is investigated.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1712-1723
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• 2001

This paper presents a design procedure and manufacturing techniques realizing of a 5.8 GHz duplexer based on cylindrical coaxial dielectric resonator. Upto Q$\times$f$\_$o/=30,000 cylindric coaxial dielectric resonator was developed control by addition of dielectric materials. This resonator shows attenuation characteristics -40 dB for transmitter and -50 dB for receiver by consisting of two sets of 4-stage cavity resonator within f$\_$o/$\pm$10 MHz bandwidth which was requirement of DSRC. Employing the measurement results, design procedure to characterize the transmission and reflection properties are presented.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.12
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• pp.1085-1089
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• 2002

The circular cavity resonator which can measure the dielectric properties of dielectrics in the Ka-band(26.5GHz∼400Hz) frequency range was designed and fabricated. A structure of the resonator is divided into two equal parts of the length and the dielectric plate sample is placed between two halves. Exciting and detecting of the resonator is Performed by WR28 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample, whose performance is known to be 13 in millimeter wave range, was used for the verification of the performance of the fabricated circular cavity resonator In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant TE$\sub$011/ mode, the permittivity and Q${\times}$f$\sub$0/ were measured as 26.69GHz, 12.9 and 124,000GHz, respectively.