• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.141-147
• /
• 2010

In this study, high-k oxide films like $Al_2O_3$, $TiO_2$, $HfO_2$ were deposited on Si, $SiO_2$/Si, GaAs wafers, and then the thermal conductivity was measured by using thermo-reflectance method which utilizes the reflectance variation of the film surface produced by the periodic temperature variation. The result shows that high-k oxide films with 50 nm thickness have high thermal conductivity of 0.80~1.29 W/(mK). Therefore, effectively dissipate the heat generated in the electric circuit such as CMOS memory device, and the heat transfer changes according to the micro grain size.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.25 no.6
• /
• pp.619-627
• /
• 2014

In this paper, we designed a blade antenna for VHF-UHF band(500 MHz~3 GHz) to be used as aircraft antennas. Unlike previously reported researches that use high-dielectric materials and insert rectangular extended grounds, the antenna structure was designed by optimizing the curvature of both a radiator and an extended ground whose shape is varied by changing the exponent of an n-th polynomial. Based on the optimized structure, we measured impedance matching and gain performances to evaluate the antenna in the VHF-UHF band(500 MHz~3 GHz). As a result, we confirmed that the antenna shows matching characteristics of less than -6 dB and has average gains of greater than -5 dBi in the entire VHF-UHF band.

• Journal of the Korean Ceramic Society
• /
• v.43 no.11 s.294
• /
• pp.715-723
• /
• 2006

Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.

• Journal of the Microelectronics and Packaging Society
• /
• v.6 no.4
• /
• pp.41-48
• /
• 1999

Silica is the most popular materials as a filler of EMC for microelectronic packaging. However, because of its low thermal conductivity, the use of silica is restricted to parts requiring high thermal dissipation. The superior fluidity of EMC can be achieved with a combination of filler size distribution. In this study, physical properties of EMC filled with the crystalline silica(13$\mu\textrm{m}$) which have high fluidity and low cost and the AlN(2 $\mu\textrm{m}$) which have high thermal conductivity and low coefficient of thermal expansion were evaluated by changing the AlN/silica ratios. As a result of the evaluation of physical properties of EMC, the optimum mixing ratio of AlN/crystalline silica was 0.3/0.7. In this condition, binary mixture(AlN/crystalline silica) filled EMC showed superior properties, i.e., in the thermal conductivity, CTE, dielectric constant, flexural strength, and thermal shock resistance without reduction of fluidity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.104-107
• /
• 2001

The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D＊) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

• Electrical & Electronic Materials
• /
• v.5 no.2
• /
• pp.198-206
• /
• 1992

(P $b_{1-x}$L $a_{x}$)[(S $b_{1}$2/S $n_{1}$2/) $Ti_{y}$ Z $r_{1-y}$] $O_{3}$(0.leq.x.leq.0.04, 0.25.leq.y.leq.0.40) 세라믹을 1250[.deg.C]에서 2시간동안 유지시켜 일반 소성법으로 제작하였으며 조성 및 L $a_{2}$ $O_{3}$첨가량에 따른 구조적, 압전적 특성을 관찰하였다. L $a_{2}$ $O_{3}$의 첨가량이 3-4[mol%]인 경우 La-rich의 pyrochlore상이 형성되었다. 시편의 평균결정립 크기는 1-2[.mu.n]의 크기를 나타내었으며 PbTi $O_{3}$조성이 증가함에 따라 다소 감소하는 경향을 나타내었다. 각 조성의 시편에 대해 PbTi $O_{3}$ 및 L $a_{2}$ $O_{3}$의 첨가량이 증가할수록 유전상수는 증가하는 경향을 나타내었으며 상전이 온도인 큐리온도는 PbTi $O_{3}$조성이 감소할수록 L $a_{2}$ $O_{3}$첨가량이 증가할수록 감소하는 경향을 나타내었다. 압전 전하계수 및 전기기계 결합계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성에 따라 증가하였으며 L $a_{2}$ $O_{3}$가 4[mol%]첨가된 0.10PSS-0.40PT-0.50PZ 시편에서 각각 250x$10^{-12}$[C/N], 29.7[%]의 최대값을 나타내었다. 기계적 품질계수는 L $a_{2}$ $O_{3}$첨가량 및 PbTi $O_{3}$조성이 증가할수록 감소하는 경향을 나타내었으며 0.10PSS-0.25PT-0.65PZ 시편에서 138의 최대값을 나타내었다.다.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.2
• /
• pp.78-81
• /
• 2013

$0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ (hereafter, No excess NKN) ceramics and $0.95(Na_{0.5}K_{0.5})NbO_3-0.05BaTiO_3+0.2wt%\;Ag_2O$ with excess $(Na_{0.5}K_{0.5})NbO_3$ (hereafter, Excess NKN) were fabricated by the conventional solid state sintering method, and their phase transition properties and dielectric properties were investigated. The crystalline structure of No excess NKN ceramics and Excess NKN ceramics were shown characteristics of polymorphic phase transition (hereafter, PPT), especially shift from the orthorhombic to tetragonal phase by increasing sintering temperature range from $1,100^{\circ}C$ to $1,200^{\circ}C$. Also, the temperature coefficient of capacitance (hereafter, TCC) of No excess NKN ceramics and Excess NKN ceramics from $-40^{\circ}C$ to $100^{\circ}C$ was measured to evaluate temperature stability for applications in cold regions. The TCC of No excess NKN and Excess NKN ceramics showed positive TCC characteristics at a temperature range from $-40^{\circ}C$ to $100^{\circ}C$. Especially, Excess NKN showed a smaller TCC gradient than those of Excess NKN ceramics in range from $-40^{\circ}C$ to $100^{\circ}C$. Therefore, NKN piezoelectric ceramics combined with temperature compensated capacitor having negative temperature characteristics is desired for usage in cold regions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.6
• /
• pp.490-494
• /
• 2020

Sulphur hexafluoride (SF₆) is mostly used as a current-insulating medium in gas-insulated switchgears (GIS), owing to its excellent dielectric strength and arc-extinguishing performance. The global warming potential (GWP) of SF₆, however, is 23,900 times that of CO₂, and its life time in the atmosphere is 3,200 years. For these reasons, new eco-friendly gases to replace SF₆ are required. In this study, the partial discharge (PD) characteristics of green gas for grid (g³) and dry air (N₂/O₂) were analyzed to compare with those of SF₆. A PD electrode system was designed to simulate the protrusion defect in GISs and fabricated for experimentation. To compare the PD characteristics of each gas, the discharge inception voltage (DIV), discharge extinction voltage (DEV), discharge magnitude, discharge pulse number, and phase pattern were analyzed. Results from this study are expected to provide fundamental materials for the design of eco-friendly GISs.

• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1313-1314
• /
• 2007

This paper presents organic thin-film transistors (OTFTs) with poly(3-hexylthiophene)(P3HT) semiconductor and several polymeric dielectric materials of poly(vinyl phenol)(PVP), poly(vinyl alcohol)(PVA), and polyimide(PI) by using soluble process. The fabricated OTFT's have inverted staggered structure using transmission line method(TLM) pattern. In order to evaluate the electrical characteristics of the OTFT, capacitance-voltage(C-V) and current-voltage(I-V) were measured. C-V graphs were measured at several frequencies of 100 Hz, 1 kHz, and 1 MHz and ID-VDS graphs according to $V_{GS}$. The current on/off ratio and threshold voltage with each of PVP, PVA, and PI based OTFTs were measured to $10^3$, and -0.36, -0.41, and -0.62 V. Also, the calculated mobility with each of PVP, PVA, and PI was 0.097, 0.095, and 0.028 $cm^{2}V^{-1}s^{-1}$, respectively. In the cases of PVP and PVA, the hole mobility of P3HT was in excellent agreement with the published value of 0.1 $cm^{2}V^{-1}s^{-1}$.

• Electrical & Electronic Materials
• /
• v.10 no.2
• /
• pp.134-140
• /
• 1997

PbTiO$_{3}$-PbZrO$_{3}$-Pb(Ni$_{1}$3/Nb $_{2}$3/O$_{3}$)(PZT-PNN) thin films were prepared from corresponding metal organics partially stabilized with diethanolamine by the sol-gel spin coating method. Each mol rates of PT:PZ:PNN solutions were #1(50:40:10), #2(50:30:20), #3(45:35:20) and #4(40:40:20), respectively. The spin-coated PZT-PNN films were sintered at the temperature from 500.deg. C to 600.deg. C for crystallization. The P-E hysteresis curve was drawn by Sawyer-Tower circuit with PZT-PNN film. The coercive field and the remanent polarization of #4(40:40:20 mol%) PZT-PNN film were 28.8 kV/cm and 18.3 .mu.C/cm$^{2}$, respectively. Their dielectric constants were shown between 128 and 1120, and became maximum value in MPB(40:40:20 mol%). The leakage currents of PZT-PNN films were about 9.4x 10$^{-8}$ A/cm$^{2}$, and the breakdown voltages were about 0.14 and 1.1 MV/cm. The Curie point of #3(45:35:20 mol%, sintered at 600.deg. C) film was 330.deg. C.