• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

• Electrical & Electronic Materials
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• v.10 no.1
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• pp.45-53
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• 1997

The purpose of this paper is to evaluate FRP rod for aging, which exposed to salt water and pure at elevated temperature. Dielectric constant and tan .delta. on time and frequency domain were tested to observe how rapidly the FRP rod aged. Dielectric constants of FRP rods with treating time were slightly increased. That of FRP rods with frequency, However, showed strongly the effects of large relaxation time estimated from interfacial polarization a or ionic. It is obvious that absorbed water affects to dielectric and electric properties of FRP with increasing the treating time.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• International Journal of Computer Science & Network Security
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• v.24 no.7
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• pp.118-122
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• 2024

The dielectric material is a basic element which impacts considerably on a microstrip structure performances. This project demonstrates how filter performances such as gain, bandwidth, return loss and insertion loss change proportionally with substrate material variation. The RT/Duroid 5880 and the FR-4 are two dielectric materials proposed as substrates of a low pass microstrip filter. The design and simulation are done on ADS software. The transmission and reflection characteristics show that the RT/ Duroid 5880 as a dielectric substrate permits to obtain better performance as compared to the FR-4 substrate.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.35 no.6
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• pp.583-589
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• 2011

The dielectric breakdown of bone-like materials subject to purely electric fields is investigated. In general, these materials consist of some layers with stronger dielectric strength and others with weaker dielectric strength in a parallel staggered pattern. The growth of the conductive channel is impeded during penetration of the weaker layer in the bone-like material because the electric-field concentration is relieved. The electric-field distribution around the head of the tubular channel is obtained from finite element analysis. The dielectric strength of the bone-like material is evaluated using the J integral, and some parameters affecting the dielectric strength are determined. It is shown that the J-integral values are reduced with an increase in the breakdown area in the weaker layer. It is also found that the ratio of the permittivity of the weaker layer to that of the stronger layer can strongly affect the dielectric breakdown.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.461-466
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• 2018

The effects of Ca/Sr ratio and the sintering temperature on the properties of $(Ca_xSr_{(1-x)})ZrO_3$ (CSZ) ceramics were investigated in this study. CSZ ceramics were prepared using solid-state reaction process, which were sintered in air at temperatures ranging from $1350^{\circ}C$ to $1450^{\circ}C$. Their structures were characterized by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM). The change in Ca/Sr ratio significantly affected the crystalline phase and the dielectric properties of the $(Ca_xSr_{(1-x)})ZrO_3$ ceramics. The secondary phase, $Ca_{0.15}Zr_{0.85}O_{1.85}$, was observed and increased correspondingly with the rising of sintering temperatures. In order to understand the effects of secondary phase on the dielectric properties of CSZ ceramics, the $Ca_{0.15}Zr_{0.85}O_{1.85}$ phase was prepared individually using solidstate method. The $Ca_{0.15}Zr_{0.85}O_{1.85}$ ceramics sintered at $1500^{\circ}C$ for 2 hours possessed a dielectric constant (${\varepsilon}_r$) of 21.7, a dielectric loss ($tan{\delta}$) of $49.510^{-4}$ and an Insulation Resistance (IR) of $2.1{\times}10^{10}{\Omega}$. The ($Ca_{0.7}Sr_{0.3})ZrO_3$ ceramics exhibited the best dielectric properties, with a permittivity of 29, a dielectric loss ($tan{\delta}$) of $2.7{\times}10^{-4}$, and an Insulation Resistance (IR) of $2.6{\times}10^{12}{\Omega}$.

• Korean Journal of Materials Research
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• v.34 no.7
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• pp.321-329
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• 2024

In this work, a series of BaTiO₃-based ceramic materials, Ba(Al_0.5Nb_0.5)_xTi_1-xO₃ (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO₃ does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al³⁺ and Nb⁵⁺ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequency-dependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 10⁴) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al_0.5Nb_0.5)_xTi_1-xO₃ ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO₃-based ceramics, which is important for dielectric and energy storage applications.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.53-61
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• 2015

High-energy ball milling was tested as a method for producing Ultra High Molecular Weight Polyethylene (UHMWPE)- based nanodielectrics containing 1 wt% and 5 wt% OctaIsoButylPOSS (OibPOSS). Qualitative and quantitative evaluations were used to explore the compatibility between OibPOSS and PE. Several ball milling variables were optimized in a bid to achieve UHMWPE/OibPOSS nanodielectrics. The morphology, as well as the thermal and the dielectric properties of the samples, were characterized by scanning electron microscopy, thermogravimetric analysis, broadband dielectric spectroscopy, and progressive-stress breakdown tests. The results showed that (i) ball milling was an effective method for producing UHMWPE/OibPOSS dielectric composites, but appeared ineffective in dispersing OibPOSS at the nanoscale, and (ii) the resulting UHMWPE/OibPOSS dielectric composites presented thermal and dielectric properties similar to those of neat UHMWPE.

• Advances in materials Research
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• v.1 no.1
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• pp.93-107
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• 2012

Epoxy resin is widely used in high voltage apparatus as insulation. Fillers are often added to epoxy resin to enhance its mechanical, thermal and chemical properties. The addition of fillers can deteriorate electrical performance. With the new development in nanotechnology, it has been widely anticipated that the combination of nanoparticles with traditional resin systems may create nanocomposite materials with enhanced electrical, thermal and mechanical properties. In the present paper we have carried out a comparative study on dielectric properties, space charge and dielectric breakdown behavior of epoxy resin/nanocomposites with nano-fillers of $SiO_2$ and $Al_2O_3$. The epoxy resin (LY556), commonly used in power apparatus was used to investigate the dielectric behavior of epoxy resin/nanocomposites with different filler concentrations. The epoxy resin/nanocomposite thin film samples were prepared and tests were carried out to measure their dielectric permittivity and tan delta value in a frequency range of 1 Hz - 1 MHz. The space charge behaviors were also observed by using the pulse electroacoustic (PEA) technique. In addition, traditional epoxy resin/microcomposites were also prepared and tested and the test results were compared with those obtained from epoxy resin/nanocomposites.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.5
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• pp.201-206
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• 2004

In order to investigate the optimum conditions for the effective ozone formation in a dielectric barrier discharge, measurements of ozone concentration were carried out for various conditions such as the gap length, the dielectric material and the operating gas. It was found that the optimum discharge conditions differed exceedingly in the types of operating gases and dielectric materials. In dry air, dielectric material with low dielectric constant and thermal conductivity, which might contribute to the restriction of the gas temperature rise in the discharge region, proved effective in obtaining both high ozone yield and concentration. The optimum gap length was considered to be in the range of 600-800 mm. In oxygen, using a quartz glass disk as a dielectric material, the required condition to obtain the high ozone yield and concentration was expanded.