• Title/Summary/Keyword: Dielectric loss

검색결과 1,110건 처리시간 0.034초

SCT 박막의 미세구조 및 특성에 관한 연구 (A Study on the Microstructure and Properties of SCT Thin Film)

  • 소병문;방준호;김진사
    • 반도체디스플레이기술학회지
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    • 제4권1호
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    • pp.55-59
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    • 2005
  • The ($Sr_{1-x}Ca_{x})Ti_{3}$(SCT) thin film are deposited on Pt-coated electrode (Pt/TiN/$SiO_{2}$/Si) using RF sputtering method. The maximum dielectric constant of SCT thin film is obtained by annealing at 600[$^{\circ}C$]. The temperature properties of the dielectric loss have a value within 0.02 in temperature lunges of -80 $\∼$ +90[$^{\circ}C$]). The capacitance characteristics had a stable value within ${\pm}4\%$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz).

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Effect of Chromium Chloride on the Mechanical and Dielectric Properties of EPDM Rubber

  • Salem, M.A.;Khaled, M.A.;Hussein, A.M.;Elway, E.
    • Macromolecular Research
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    • 제11권4호
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    • pp.256-259
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    • 2003
  • Measurements of Young's modulus, dielectric loss and a.c. conductivity have been carried out on EPDM rubber samples loaded with different concentrations of $CrCl_3$ (0,2,4 and 6 phr). The values of Young's modulus was found to be linearly dependent on the $CrCl_3$ content. Variation of the dielectric loss with temperature showed that $CrCl_3$ may act as plasticizer. However, at higher frequencies the dielectric loss was found to be independent of frequency and the rubber samples may behave as non-polar dielectric. Investigations of the a.c conductivity suggested that the conduction in these rubber samples can be described by small polaron tunneling. In addition, conductivity was found to increase with $CrCl_3$ content.

질화규소 재료의 고온 유전물성 평가 (High Temperature Dielectric Properties of Silicon Nitride Materials)

  • 최두현
    • 한국군사과학기술학회지
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    • 제10권3호
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    • pp.114-119
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    • 2007
  • Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.

Dielectric Changes During the Curing of Epoxy Resin Based on the Diglcidyl Ether of Bisphenol A (DGEBA) with Diamine

  • 김홍경;차국헌
    • Bulletin of the Korean Chemical Society
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    • 제20권11호
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    • pp.1329-1334
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    • 1999
  • The curing characteristics of diglycidyl ether of bisphenol A (DGEBA) with diaminodiphenylmethane (DDM) as a curing agent were studied using differential scanning calorimetry (DSC), rheometrics mechanical spectrometry (RMS), and dielectric analysis (DEA). The isothermal curing kinetics measured by DSC were well represented with the generalized auto-catalytic reaction model. With the temperature sweep, the inverse relationship between complex viscosity measured by RMS and ionic conductivity obtained from DEA was established indicating that the mobility of free ions represented by the ionic conductivity in DEA measurement and the chain segment motion as revealed by the complex viscosity measured from RMS are equivalent. From isothermal curing measurements at several different temperatures, the ionic conductivity contribution was shown to be dominant in the dielectric loss factor at the early stage of cure. The contribution of the dipole relaxation in dielectric loss factor became larger as the curing further proceeded. The critical degrees of cure, at which the dipolar contribution in the dielectric loss factor starts to appear, increases as isothermal curing temperature is increased. The dielectric relaxation time at the same degree of cure was shorter for a sample cured at higher curing temperature.

고주파 대역에서 Dielectric Rod Resonator 방법에 의한 저유전 손실 물질의 유전 특성 측정 (The Microwave Measurement of the Dielectric Properties of Low-Loss Materials by the Dielectric Rod Resonator Method)

  • 김근영;심화섭;안철;장익수
    • 대한전자공학회논문지
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    • 제27권10호
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    • pp.10-15
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    • 1990
  • Dielectric rod resonator 방법을 이용하여 고주파 대역에서 낮은 유전 손실을 갖는 유전체의 유전 특성을 측정하는 이론과 실험결과를 보였다. 유전체 시편과 금속 도체판 사이에 존재하는 공기층 효과를 최소화하기 위해 $TE_{011}$ mode 공진 주파수를 이용하였다. 컴퓨터를 사용하여 공진 주파수와 시편 크기, 2-dB 대여폭으로부터 유전 특징을 계산하였다. 측정의 오차 범위는 유전 상수인 경우 ${\pm}3{\%}$ 유전 손실인 경우 ${\pm}12{\%}$ 이내였다.

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기판온도에 따른 (Ba,Sr)TiO$_3$ 박막의 구조와 유전특성 (The Structure and Dielectric Properties of the (Ba,Sr)TiO$_3$ Thin Films with the Substrate Temperature)

  • 이상철;이문기;이영희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권11호
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    • pp.603-608
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    • 2000
  • $(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

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온도 변화에 의한 열전도성 실리콘 고무의 절연 열화 특성 (A Study on Insulation Degradation Properties of Thermal Conductive Silicone Rubber due to Temperature Transition)

  • 이성일
    • 한국전기전자재료학회논문지
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    • 제28권7호
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    • pp.456-461
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    • 2015
  • In this study, the frequency properties of electrostatic capacity and dielectric loss for the samples with different types of filler has been measured in through the applied frequency range of 7 kHz ~3,000 kHz at temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$. The results of this study are as follows. When the sample is degradated at the temperature of $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ and the frequency range of 7 kHz ~3,000 kHz is applied, It found that the electrostatic capacity of the sample with Polyimide film is larger than the sample with Grass fiber. It found that the dielectric loss for the sample with Polyimide film is larger than the sample with Grass fiber with increasing frequency and temperature in the $80^{\circ}C$, $110^{\circ}C$, $140^{\circ}C$, $170^{\circ}C$ range. Also, the dielectric loss decreased with increasing frequency. In case of the sample with Polyimide film, It found that the electrostatic capacity decreased with increasing temperature, and the dielectric loss gradually decreased with increasing frequency.

Effect of Sintering Temperature on Structural and Dielectric Properties of (Ba0.54Sr0.36Ca0.10)TiO3 Thick Films

  • Noh, Hyun-Ji;Lee, Sung-Gap;Nam, Sung-Pill;Lee, Young-Hie
    • Transactions on Electrical and Electronic Materials
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    • 제10권2호
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    • pp.49-52
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    • 2009
  • Barium strontium calcium titanate powders were prepared with the sol-gel method. Ferroelectric $(Ba_{0.54}Sr_{0.36}Ca_{0.1})TiO_3$(BSCT) thick films were fabricated by the screen-printing method on alumina substrate. Then we investigated the structural and dielectric properties of the BSCT thick films at different sintering temperatures. The thermal analysis showed that the BSCT polycrystalline perovskite phase formed at around $660^{\circ}C$. The X-ray diffraction analysis showed a cubic perovskite structure with no second phase present in all of the BSCT thick films. The average grain size and the thickness of the specimens sintered at $1450^{\circ}C$ were about $1.6{\mu}m$ and $45{\mu}m$, respectively. The relative dielectric constant increased and the dielectric loss decreased as the sintering temperature was increased; for BSCT thick films sintered at $1450^{\circ}C$ the values of the dielectric constant and the dielectric loss were 5641 and 0.4%, respectively, at 1 kHz.

중합도에 따른 저점도 실리콘유의 유전 특성 (Dielectric Properties of Low Viscosity Silicone Oils with Degree of Polymerization)

  • 조경순
    • 한국전기전자재료학회논문지
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    • 제27권12호
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    • pp.847-851
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    • 2014
  • The characteristics of dielectric constant and $tan{\delta}$ of low viscosity silicone oils with changing degree of polymerization were investigated. The result shows dipole loss mechanism at low temperature range. The dielectric loss in the range of low frequencies are predominantly of ionic nature with temperature increase. The peak of dielectric loss is the detrapping of the electrons which is were trapped in the localized level of the silicone oils at the frequency of 30 kHz. The increase of ionic conduction is attributed to the presence of ionizable oxidation products and their increased dissociation feature. The activation energy ${\Delta}H$ and dipole moment ${\mu}_d$ were increased whit increasing degree of polymerization.

Thermal characteristics variation of PDP in compliance with dielectric loss

  • Lee, Tae-Ho;Jung, Jae-Chul;Lee, Sang-Kuk;Kim, Joong-Kyun;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.265-268
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    • 2009
  • The discharge condition of Plasma display panel(PDP) changes as the display time increases. Imaginary part of permittivity of dielectric material which is related to dielectric loss has been often neglected because of relatively small value compare to that of the real part. The thermal characteristics of PDPs with two different dielectrics has been studied and compared.

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