• Title/Summary/Keyword: Dielectric heating

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Experimental and Numerical Analysis of A Novel Ceria Based Abrasive Slurry for Interlayer Dielectric Chemical Mechanical Planarization

  • Zhuanga, Yun;Borucki, Leonard;Philipossian, Ara;Dien, Eric;Ennahali, Mohamed;Michel, George;Laborie, Bernard;Zhuang, Yun;Keswani, Manish;Rosales-Yeomans, Daniel;Lee, Hyo-Sang;Philipossian, Ara
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.2
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    • pp.53-57
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    • 2007
  • In this study, a novel slurry containing ceria as the abrasive particles was analyzed in terms of its frictional, thermal and kinetic attributes for interlayer dielectric (ILD) CMP application. The novel slurry was used to polish 200-mm blanket ILD wafers on an $IC1000_{TM}$ K-groove pad with in-situ conditioning. Polishing pressures ranged from 1 to 5 PSI and the sliding velocity ranged from 0.5 to 1.5 m/s. Shear force and pad temperature were measured in real time during the polishing process. The frictional analysis indicated that boundary lubrication was the dominant tribological mechanism. The measured average pad leading edge temperature increased from 26.4 to $38.4\;^{\circ}C$ with the increase in polishing power. The ILD removal rate also increased with the polishing power, ranging from 400 to 4000 A/min. The ILD removal rate deviated from Prestonian behavior at the highest $p{\times}V$ polishing condition and exhibited a strong correlation with the measured average pad leading edge temperature. A modified two-step Langmuir-Hinshelwood kinetic model was used to simulate the ILD removal rate. In this model, transient flash heating temperature is assumed to dominate the chemical reaction temperature. The model successfully captured the variable removal rate behavior at the highest $p{\times}V$ polishing condition and indicates that the polishing process was mechanical limited in the low $p{\times}V$ polishing region and became chemically and mechanically balanced with increasing polishing power.

Kinetics on the Microwave Carbonization of Rice Chaff (왕겨의 마이크로파 탄화속도)

  • Kim, Ji Hyun;Ryu, Seung Kon;Kim, Dong Kook
    • Korean Chemical Engineering Research
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    • v.43 no.6
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    • pp.683-690
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    • 2005
  • The microwave carbonization of rice chaff was performed, and their kinetics were compared to those of conventional thermal carbonization. Thermal carbonization was carried out at $300-600^{\circ}C$ for 30 minutes. The weight loss and C/H mole ratio remarkably increased as increase of temperature, while there was no carbonization by microwave dielectric heating in spite of increasing incident power and irradiation time. However, microwave carbonization was successfully performed by addition of 6 wt% of thermal carbonized rice chaff, it's C/H mole ratio is larger than 3.0, as a catalytic initiator to uncarbonized rice chaff, and the kinetics was depended on the incident power and irradiation time, resulting in the coincide with thermal carbonization to the Arrhenius equation. The activation energy of microwave carbonization was quite low as compared to that of thermal carbonization, while the kinetic constant was large. This is due to the internal volumetric heating characteristics of carbonized rice chaff by microwave. The effect of ash, and C/H mole ratio and amount of carbonized rice chaff were investigated on microwave carbonization.

Influence of Defects on Electrical Characteristics of Distributing Cable Termination (배전급 케이블 종단부의 결점이 전기적 특성에 미치는 영향)

  • Kim, Sang-Hyun;Choi, Jae-Hyeong;Choi, Jin-Wook;Kim, Young-Seok;Kim, Sun-Gu;Baek, Seung-Myeong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.2
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    • pp.190-195
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    • 2009
  • This paper introduces experimental investigates of an electrical accident of the distributing cable termination with simulated a shoddy construction. We prepared two termination kites, one is built-in type, the other is heat contraction type. Also, we manufactured cable termination that have simulated defect by badness construction and investigated their insulation characteristics such as ac (35[kV], 1[min]) and impulse (95[kV], $1.2{\times}50[{\mu}s]$) withstand test. The influence of defects such as thickness decrease, the gap between stress-con of housing and semiconductor and heating time on insulating properties of the termination have been studied. The thickness decrease of an insulator decreases ac breakdown strength suddenly and the breakdown traces of the insulator that is damaged by knife displayed elliptic shape. The gap of between stress-con and semiconductor deteriorates dielectric strength of insulator seriously. In heat contraction type, the ac breakdown voltage became low when the heating time is short.

Microwave drying characteristics of squash slices

  • Lee, Dongyoung;So, Jung Duk;Jung, Hyun Mo;Park, Sung Hyun;Lee, Seung Hyun
    • Korean Journal of Agricultural Science
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    • v.45 no.4
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    • pp.847-857
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    • 2018
  • Recently, customers' demand and attention to dried agricultural products or foods have increased due to their convenience and nutritional values. Conventional drying methods such as solar drying and hot air drying have been most widely used for producing a large amount of dried agricultural products; however, those methods require quite a long time and high energy consumption. To compensate for these issues associated with conventional methods, dielectric heating such as microwave and radio frequency heating has been used as a supplemental method in the drying procedure. This study investigated the microwave drying characteristics of squash slices with different thicknesses under different microwave power intensities and determined the best drying model that could precisely describe the experimental drying curves of the squash slices. The squash was cut into slices with two different thicknesses (5 and 10 mm), and then, they were dried under different microwave power intensity ranges between 90 and 900 W with an increase interval of 90 W. Six drying models were tested to evaluate the fit to the experimental drying data, and the effective moisture diffusivity ($D_{eff}$) values of the squash slices under microwave drying were determined. The results clearly show that as the microwave power was increased, the drying time of both squash slices was significantly decreased, and the slope of the drying rate increased. The effective moisture diffusivity was also significantly related with the microwave power intensities and thicknesses of the slices. In addition, the Page model was most suitable to delineate the drying curves of both squash slices under different microwave power intensities.

Fabrication and Electrical Insulation Property of Thick Film Glass Ceramic Layers on Aluminum Plate for Insulated Metal Substrate (알루미늄 판상에 글라스 세라믹 후막이 코팅된 절연금속기판의 제조 및 절연특성)

  • Lee, Seong Hwan;Kim, Hyo Tae
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.4
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    • pp.39-46
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    • 2017
  • This paper presents the fabrication of ceramic insulation layer on metallic heat spreading substrate, i.e. an insulated metal substrate, for planar type heater. Aluminum alloy substrate is preferred as a heat spreading panel due to its high thermal conductivity, machinability and the light weight for the planar type heater which is used at the thermal treatment process of semiconductor device and display component manufacturing. An insulating layer made of ceramic dielectric film that is stable at high temperature has to be coated on the metallic substrate to form a heating element circuit. Two technical issues are raised at the forming of ceramic insulation layer on the metallic substrate; one is delamination and crack between metal and ceramic interface due to their large differences in thermal expansion coefficient, and the other is electrical breakdown due to intrinsic weakness in dielectric or structural defects. In this work, to overcome those problem, selected metal oxide buffer layers were introduced between metal and ceramic layer for mechanical matching, enhancing the adhesion strength, and multi-coating method was applied to improve the film quality and the dielectric breakdown property.

Thermally Stimulated Current Analysis of (Ba, Sr)TiO$_3$ Capacitor ((Ba, Sr)TiO$_3$ 커패시터의 Thermally Stimulated Current분석)

  • Kim, Yong-Ju;Cha, Seon-Yong;Lee, Hui-Cheol;Lee, Gi-Seon;Seo, Gwang-Seok
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.5
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    • pp.329-337
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    • 2001
  • It has been known that the leakage current in the low field region consists of the dielectric relaxation current and intrinsic leakage current, which cause the charge loss in dynamic random access memory (DRAM) storage capacitor using (Ba,Sr)TiO$_{3}$ (BST) thin film. Especially, the dielectric relaxation current should be seriously considered since its magnitude is much larger than that of the intrinsic leakage current in giga-bit DRAM operation voltage (~IY). In this study, thermally stimulated current (TSC) measurement was at first applied to investigate the activation energy of traps and relative evaluation of the density of traps according to process change. And, through comparing TSC to early methods of I-V or I-t measurement and analyzing, we identify the origin of the dielectric relaxation current and investigate the reliability of TSC measurement. First, the polarization condition such as electric field, time, temperature and heating rate was investigated for reliable TSC measurement. From the TSC measurement, the energy level of traps in the BST thin film has been investigated and evaluated to be 0.20($\pm$0.01) eV and 0.45($\pm$0.02) eV. Based on the TSC measurement results before and after rapid thermal annealing (RTA) process, oxygen vacancy is concluded to be the origin of the traps. TSC characteristics with thermal annealing in the MIM BST capacitor have shown the same trends with the current-voltage (I-V) and current-time (I-t) characteristics. This means that the TSC measurement is one of the effective methods to characterize the traps in the BST thin film.

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Parametric Study of AC Current Lead for the Termination of HTS Power Cable

  • Kim, D.L;Kim, S.H.;S. Cho;H.S. Yang;Kim, D.H.;H.S. Ryoo;K.C. Seong
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.107-110
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    • 2003
  • High Temperature Superconductor (HTS) transmission cable can carry more than 2 to 5 times higher electricity and also obtain substantially lower transmission losses than conventional cables. Liquid nitrogen is to be used to cool the HTS power cable and its cost is much cheaper than the liquid helium used for the cooling of metal superconducting wire. In Korea the HTS power cable development project has been ongoing since July, 2001 with the basic specifications of 22.9kV, 50MVA and told dielectric type as the first 3-year stage. The cryogenic system of the HTS cable is composed of HTS cable cryostat termination and refrigeration system. Termination of HTS cable is a connecting part between copper electrical cable at room temperature and HTS cable at liquid nitrogen temperature. In order to design the termination cryostat, it is required that the conduction heat leak and Joule heating on the current lead be reduced, the cryostat be insulated electrically and good vacuum insulation be maintained during long time operation. Heat loads calculations on the copper current lead have been performed by analytical and numerical method and the feasibility study fer the other candidate materials has also been executed.

Characteristics of the Radio-Frequency/Vacuum Drying of Heavy Timbers for Post and Beam of Korean Style Housings Part I : For Japanese larch round logs with 150 mm and 210 mm in diameter and 2,500 mm in length

  • Lee, Nam-Ho;Zhao, Xue-Feng;Shin, Ik-Hyun;Park, Moon-Jae;Park, Jung-Hwan;Park, Joo-Saeng
    • Journal of the Korean Wood Science and Technology
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    • v.39 no.2
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    • pp.125-131
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    • 2011
  • The characteristics of radio-frequency/vacuum drying Japanese larch boxed heart round logs with 150 mm and 210 mm in diameter and 2,500 mm in length, subjected to compressive loading, after the pretreatment of kerf were investigated. The results of this study were as the follows: The drying time of about 120 hours~130 hours was needed from green to about 15 percent of moisture content. The gradient of final moisture content for all specimens was very gentle in both longitudinal and transverse directions owing to dielectric heating. The surface checks seriously occurred although the occurrence extent of surface check for the kerfed specimens was slight compared with that for the control specimens because drying stress was relieved by kerf. The occurrence of surface checks for the L-specimen was more serious than that for the S-specimen.

A Two-dimensional Steady State Simulation Study on the Radio Frequency Inductively Coupled Argon Plasma

  • Lee, Ho-Jun;Kim, Dong-Hyun;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.246-252
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    • 2002
  • Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

LTCC and LTCC-M Technologies for Multichip Module (Multichip module 개발을 위한 LTCC 밀 LTCC-M 기술)

  • 박성대;강현규;박윤휘;문제도
    • Journal of the Microelectronics and Packaging Society
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    • v.6 no.3
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    • pp.25-35
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    • 1999
  • LTCC (Low Temperature Cofired Ceramic) or LTCC-M (Low Temperature Cofired ceramic on Metal) technology is one of MCM-C (Multichip Module on Ceramic) technologies and becomes to be widely used in consumer, RF and automotive electronics. As green sheets for LTCC are cofired below $1000^{\circ}C$ in comparison with those for HTCC (High Temperature Cofired Ceramic), high conductivity metal traces such as gold, silver and copper can be used. The dimensional stability in LTCC-M technology enables embedded passives to be integrated inside modules, which enhances the electrical performance and increases the reliability of the modules. Coefficient of thermal expansion and dielectric constant can be controlled by changing composition and heating profile for cofiring. In this technical review, LTCC and LTCC-M technologies are introduced and advantages of those technologies are explained.

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