• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.12
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• pp.35-41
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• 2011

In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain(FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Parameters of symmetric coupled MIS transmission line with various gaps between crossbars for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.262.1-262.1
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• 2014

Lipid peroxidation induces functional deterioration of cell membrane and induces cell death in extreme cases. These phenomena are known to be related generally to the change of physical properties of lipid membrane such as decreased lipid order or increased water penetration. Even though the electric property of lipid membrane is important, there has been no report about the change of electric properties after lipid peroxidation. Herein, we demonstrate the molecular energy band change in red blood cell membrane through peroxidation by air-based atmospheric pressure DBD plasma treatment. Ion-induced secondary electron emission coefficient (${\gamma}$ value) was measured by using home-made gamma-focused ion beam (${\gamma}$-FIB) system and electron energy band was calculated based on the quantum mechanical Auger neutralization theory. The oxidized lipids showed higher gamma values and lower electron work functions, which implies the change of surface charging or electrical conductance. This result suggests that modified electrical properties should play a role in cell signaling under oxidative stress.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.12
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• pp.1497-1502
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• 2012

To manufacture a robot hand that essentially mimics the functions of a human hand, it is necessary to develop flexible actuators and sensors. In this study, we propose the design, manufacture, and performance verification of flexible actuators and sensors based on Electro Active Polymer (EAP). EAP is fabricated as a type of film, and it moves with changes in the voltage because of contraction and expansion in the polymer film. Furthermore, if a force is applied to an EAP film, its thickness and effective area change, and therefore, the capacitance also changes. By using this mechanism, we produce capacitive actuators and sensors. In this study, we propose an EAP-based capacitive sensor and evaluate its use as a robot hand sensor.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.633-638
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• 1995

Two types of $Ta_2O_{5}$, films, prepared by thermal oxidation and PECVD, on P-type(100) Si wafers were studied to examine the relationship between electrical properties and stresses of the films. For the thermally oxidized films, Ta films were depositied on the Si wafers by dc magnetron sputtering followed by thermal oxidation as functions of oxidation temperature and time. The PECVD films were deposited on the Si wafers as a fuction of RF power density. The relationship between the electrical properties and film stresses were studied. In the case of thermally oxidized $Ta_2O_{5}$ film, the electrical properties and film stress were not found to be dependent on each other, while PECVD $Ta_2O_{5}$ films showed that the electrical properties were depended on the film stress.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2509-2515
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• 2014

In this paper, the conventional vertical structure for VLSI circuits CMOS intend to improve the stress effects of active region and built-in threshold voltage. For these improvement, the proposed structure is shallow trench isolation of moat shape. We want to analysis the electron concentration distribution, gate bias vs energy band, thermal stress and dielectric enhanced field of thermal damage between vertical structure and proposed moat shape. Physically based models are the ambient and stress bias conditions of TCAD tool. As an analysis results, shallow trench structure were intended to be electric functions of passive as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9B
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• pp.1527-1533
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• 2000

Basically, a general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line is used. In this paper, an analysis for a new substrate shielding MIS structure consisting of grounded cross-bars at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain (FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor have been examined as functions of cross-bar spacing and frequency. It is shown that the quality factor of the transmission line can be improved without significant change in the characteristic impedance and effectve dielectric constant.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.254-257
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• 2000

We report spectroscopic ellipsometric (SE) measurements on $Cd_{1-x}Mg_x/Te$ (0$\leq$x$\leq$0.43) films grown on GaAs substrate. When compared with previous bulk data, at first, current spectrum shows clear interference oscillations below $E_0$ band gap energy, which means the transparent characteristic of direct transition material below $E_0$ edge. It proves that the film samples used for this work have the most interrupted surface of high quality reported so far by SE. Secondly the best resolution of $E_2$-peak is observed, so we can report clear splitting of E$_2$and $E_0'$ band gap energies. We also performed the multilayer calculation necessary to remove this interference oscillations to observe $E_0'$ band gap energy of $Cd_{1-x}Mg_x/Te$ (x=0.23) film.

• Journal of the Korea Convergence Society
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• v.12 no.2
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• pp.29-34
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• 2021

In this paper, a cylindrical photonic crystal waveguide with a low-index core is first proposed. The core can be filled with air, liquid, or arbitrary dielectric materials. Exact analyses for the electromagnetic field characteristics of guided modes, by using appropriate Bessel functions and applying the boundary conditions, are performed to find out the guiding characteristics of the proposed waveguide. For verification and usage in design and manufacturing process, the computer-calculation of the waveguide transmission characteristics is also performed by applying the rigorous full-vectorial finite difference method. Providing variations of the effective area for the fundamental mode of the designed waveguide with different numbers of cladding layers, ranging from 2.6056 ㎛2 to 5.9673 ㎛2 over the operation wavelength, generally as the core refractive index n1 is higher, the mode area becomes smaller and the result leads to more optimistic effect for nonlinear device applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.157-157
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• 2009

$BaTiO_3$를 기본조성으로 하는 PTC 써미스터는 Curie 온도이상에서 저항이 급격히 상승하는 반도성 전자세라믹스로서 degaussing 소자, 정온 발열체, 온도센서, 전류 제한 소자 등 상업적으로 폭넓게 사용되고 있다. 본 소자는 소결온도, 소결 및 열처리 분위기, 불순물, 첨가제 등의 제조공정상의 인자들과 기공률, 결정립 크기 등이 복합적으로 작용하여 PTCR 특성이 크게 영향을 받기 때문에 제조하기에 무척 까다로운 소자로 알려져 있다. 특히 과전류 보호 소자용으로 사용하기 위해서는 상온 비저항을 크게 낮추어야 하며 이에 대한 연구가 계속 진행되고 있다. 따라서 본 연구에서는 SiO2을 0.5~10 at%로 달리한 조성으로 환원 분위기에서 소결하고 공기 중에서 재산화 처리하여 재료의 PTC 특성에 어떠한 영향을 미치는지 분석하였다. 소정의 조성을 선택하여 $1180^{\circ}C{\sim}1240^{\circ}C$에서 2시간 동안 환원분위기에서 소결하고, $800^{\circ}C$에서 1 시간 공기 중에서 재산화 처리한 후 R-T 특성을 측정하여 SiO2 함량에 따른 PTC 특성을 분석하였다. 그 결과 SiO2의 함량이 증가할수록 상온 저항은 낮아지다가 3.0 at% 이상으로 첨가할 경우 급격히 상승하는 경향을 나타내었다. 특히 SiO2를 1.0~3.0 at% 일 때 우수한 PTC 특성을 가졌다. $1180^{\circ}C$에서는 소결 밀도가 낮아 상온 비저항이 크게 높았지만, $1200^{\circ}C{\sim}1220^{\circ}C$에서는 정상 입성장이 나타나면서 일반적인 PTC 특성을 가졌지만, $1240^{\circ}C$ 이상에서는 공정 액상이 형성되어 비정상 입성장이 일어나 상온 비저항이 크게 낮아졌다. 한편 점핑비-log(Rmax/Rmin)는 SiO2 함량이 증가할수록 높아지다가 3.0 at% 이상에서는 낮아짐을 확인하였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.3
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• pp.129-134
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• 2020

Moisture infiltration inside the solar cell module, filling of EVA sheet, melting of the frame seal, and deterioration of power generation performance in the module one year after installation are occurring. Whitening phenomenon, electrode corrosion phenomenon, and dielectric breakdown phenomenon are appearing in solar cell module installed in Korea before 5-7 years, leading to deterioration of power generation performance, and big problems for long-term reliability and long life technology are emerging. Therefore, in order to solve these problems, the development of a micro inverter (MiCrco Inverter Converter, MiC) including the function of securing the durability of the solar cell module and monitoring the aging progress and the solar cell based on the monitoring data from the MiC smart monitoring programs have been proposed to determine the aging of modules. In addition, in order to become a highly efficient solar smart monitoring system through systematic operation management through IT convergence with MiC that has enhanced monitoring function of solar cell module, SoC(System On Chip) in micro inverter is the environment for solar cell module. There is a demand for functions that can detect information in a complex manner and perform communication and control when necessary. Based on these requirements, this paper aims to develop SoC-based low-cost MiC smart photovoltaic system technology.