• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.412-417
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• 2003

In this Paper, we propose a time-domain magnetic field integral equation (TD-MFIE) formulation for analyzing the transient electromagnetic response from three-dimensional (3-D) dielectric bodies. The solution method in this paper is based on the Galerkin's method that involves separate spatial and temporal testing procedures. Triangular patch basis functions are used for spatial expansion and testing functions for arbitrarily shaped 3-D dielectric structures. The time-domain unknown coefficients of the equivalent electric and magnetic currents are approximated tv a set of orthonormal basis function that is derived from the Laguerre polynomials. These basis functions are also used for the temporal testing. Numerical results computed by the proposed method are presented and compared.

• 대한전자공학회논문지
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• 제25권8호
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• pp.874-883
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• 1988

A complete form of physical optics solution to the diffraction of electromagnetic waves by a dielectric wedge with arbitrary dielectric constant and general wedge angle is obtained for an incident plane wave with any angle. Based on the formulation of dual integral equation in the spectral domain, the physical optics solution is constructed by sum of geometrical optics term including multiple reflection inside the wedge and the edge diffracted field, of which diffraction functions are represented in a quite simple form as series of cotangent functions weighted by the Fresnel reflection coefficients. Since diffraction patterns of physical optics are discontinous at dielectric interfaces, Part II and III of these three companion papers will be concerned with correction to the error of the physical optics approximation.

• 한국전자파학회논문지
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• 제14권5호
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• pp.458-465
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• 2003

본 논문에서는 3차원 유전체로부터의 전자기 과도 응답을 해석하기 위하여 시간 영역 전장 적분방정식을 이용한 새로운 해법을 제안한다. 이를 위하여 공간 및 시간 시험 과정으로 분리한 갤러킨 방법을 적용한다. 3차원임의 형태의 유전체 표면을 삼각형으로 분할한 다음, 공간에 대한 등가 전류의 전개 및 시험 함수로서 삼각형 벡터 함수를 사용한다. 시간 영역의 미지 계수를 라게르 함수로부터 유도된 기저함수로 근사하며, 이 함수를 시간 영역의 시험 함수로도 사용한다 제안된 방법에 의하여 계산된 등가 전류 및 원거리장의 수치 결과들을 제시한다.

• 한국전자파학회논문지
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• 제14권10호
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• pp.1096-1103
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• 2003

본 논문에서는 시간영역 PMCHW 적분방정식을 이용하여 3차원 유전체로부터의 전자기 과도 응답을 해석하기 위한 새로운 해법을 제안한다. 이를 위하여 공간 및 시간 시험 과정으로 분리한 갤러킨 방법을 적용한다. 3차원 임의 형태의 유전체 표면을 삼각형으로 분할한 다음, 공간에 대한 등가전류의 전개 및 시험 함수로서 삼각형 벡터 함수를 사용한다. 시간영역의 미지 계수를 라게르 함수로부터 유도된 기저함수로 근사하며, 이 함수를 시간영역의 시험함수로도 사용한다. 제안된 방법에 의하여 계산된 유전체의 등가전류 및 원거리장의 수치 결과들을 보인다.

• 한국진공학회지
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• 제12권1호
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• pp.20-24
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• 2003

Parametric semiconductor model을 이용하여 $In_{\chi}Ga_{1-\ch}As \;(0\leq\chi\leq1)$ 화합물 반도체 박막의 유전함수를 얻었다. Parametric model은 Gaussian-broadened polynomial들의 합으로 임계점에 대한 모델 유전 함수를 묘사하여 InGaAs 화합물의 광학 상수들을 재현할 수 있는 parameterized 함수를 제공하였다. 이러한 parametric 모델을 통하여 임의의 성분비 $\chi$에 대한 파라미터 값들을 얻었고, 이렇게 얻어진 파라미터들로부터 $In_{\chi}Ga_{1-\ch}As \;(0\leq\chi\leq1)$ 화합물 박막의 임의의 성분비에 대한 유전 함수를 얻을 수 있었다.

• 한국재료학회지
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• 제29권12호
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• pp.753-756
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• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• ETRI Journal
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• 제20권1호
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• pp.46-54
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• 1998

An analysis method of electromagnetic scattering from periodic patch array of double-dipole elements on a grounded dielectric substrate in case of oblique incident and arbitrary polarization is considered. The basis functions are chosen to be entire consinusoidal functions are chosen to be entire consinusoidal functions covering the rectangular shaped domain in which the original dipoles are inscribed, unlike the conventional method in which basis functions are defined only for the conducting element region. To confirm the validity of the proposed analysis method, we calculate the normalized scattered power for two propagating modes and compare the results with those obtained by the previous numerical method for the double dipole elements of rectangular type and parallelogram type which have the property of frequency scanned reflection and polarizer. Good correspondence has been observed between them. Some numerical results such as variation of power and axial ratio of first-order diffracted wave by a periodic array of double-dipole elements are compared with previous results.

• 한국전기전자재료학회논문지
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• 제23권12호
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.14-14
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• 2009

In this study, we investigated the effects of Cr dopant on the bulk trap level and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) using dielectric functions such as $Z^*$, $Y^*$, $M^*$, ${\varepsilon}^*$, and $tan{\delta}$. More than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states could be identified in ZBCr($ZnO-Bi_2O_3-Cr_2O_3$). The grain boundaries of ZBCr could be electrochemically divided into two types: sensitive to ambient oxygen and thus electrically active one and oxygen-insensitive and thus electrically inactive one.