• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.9
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• pp.412-417
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• 2003

In this Paper, we propose a time-domain magnetic field integral equation (TD-MFIE) formulation for analyzing the transient electromagnetic response from three-dimensional (3-D) dielectric bodies. The solution method in this paper is based on the Galerkin's method that involves separate spatial and temporal testing procedures. Triangular patch basis functions are used for spatial expansion and testing functions for arbitrarily shaped 3-D dielectric structures. The time-domain unknown coefficients of the equivalent electric and magnetic currents are approximated tv a set of orthonormal basis function that is derived from the Laguerre polynomials. These basis functions are also used for the temporal testing. Numerical results computed by the proposed method are presented and compared.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.8
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• pp.874-883
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• 1988

A complete form of physical optics solution to the diffraction of electromagnetic waves by a dielectric wedge with arbitrary dielectric constant and general wedge angle is obtained for an incident plane wave with any angle. Based on the formulation of dual integral equation in the spectral domain, the physical optics solution is constructed by sum of geometrical optics term including multiple reflection inside the wedge and the edge diffracted field, of which diffraction functions are represented in a quite simple form as series of cotangent functions weighted by the Fresnel reflection coefficients. Since diffraction patterns of physical optics are discontinous at dielectric interfaces, Part II and III of these three companion papers will be concerned with correction to the error of the physical optics approximation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.5
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• pp.458-465
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• 2003

In this paper, we analyze the transient electromagnetic response from three-dimensional(3-D) dielectric bodies using a time-domain electric field integral equation formulation. The solution method in this paper is based on the Galerkin＇s method that involves separate spatial and temporal testing procedures. Triangular patch basis functions are used for spatial expansion and testing functions for arbitrarily shaped 3-D dielectric structures. The time-domain unknown coefficients of the equivalent electric and magnetic currents are approximated as an orthonormal basis function set that is derived from the Laguerre functions. These basis functions are also used as the temporal testing. Numerical results involving equivalent currents and far fields computed by the proposed method are presented.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1096-1103
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• 2003

In this paper, we analyze the transient electromagnetic response from three-dimensional(3-D) dielectric bodies using a time-domain PMCHW(Poggio, Miller, Chang, Harrington, Wu) formulation. The solution method in this paper is based on the Galerkin's method that involves separate spatial and temporal testing procedures. Triangular patch basis functions are used for spatial expansion and testing functions for arbitrarily shaped 3-D dielectric structures. The time-domain unknown coefficients of the equivalent currents are approximated by a set of orthonormal basis functions that are derived from the Laguerre polynomials. These basis functions are also used as the temporal testing. Numerical results involving equivalent currents and far fields computed by the proposed method are presented.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.20-24
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• 2003

We Performed the modeling of the dielectric functions of InGaAs by using the parametric semiconductor model. Parametric model describes the analytic dielectric function as the summation of several energy-bounded Gaussian-broadened polynomials and provides a reasonably well parameterized function which can accurately reproduce the optical constants of InGaAs materials. We obtained the values of fitting parameters of an arbitrary composition $\chi$ through the parametric model. And then, from these parameters we could obtain the unknown dielectric functions of InGaAs alloy films ($0\leq\chi\leq1$).

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.753-756
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• 2019

Orthorhombic dysprosium manganite DyMnO₃ with single phase is synthesized using solid-state reaction technique and the crystal structure and dielectric properties as functions of temperature and frequency are investigated. Thermally activated dielectric relaxations are shown in the temperature dependence of the complex permittivity, and the respective peaks are found to be shifted to higher temperatures as the measuring frequency increases. In Arrhenius plots, activation energies of 0.32 and 0.24 eV for the high- and low-temperature relaxations are observed, respectively. Analysis of the relationship between the real and imaginary parts of the permittivity and the frequencies allows us to explain the dielectric behavior of DyMnO₃ ceramics by the universal dielectric response model. A separation of the intrinsic grain and grain boundary properties is achieved using an equivalent circuit model. The dielectric responses of this circuit are discerned by impedance spectroscopy study. The determined grain and grain boundary effects in the orthorhombic DyMnO₃ ceramics are responsible for the observed high- and low-temperature relaxations in the dielectric properties.

• ETRI Journal
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• v.20 no.1
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• pp.46-54
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• 1998

An analysis method of electromagnetic scattering from periodic patch array of double-dipole elements on a grounded dielectric substrate in case of oblique incident and arbitrary polarization is considered. The basis functions are chosen to be entire consinusoidal functions are chosen to be entire consinusoidal functions covering the rectangular shaped domain in which the original dipoles are inscribed, unlike the conventional method in which basis functions are defined only for the conducting element region. To confirm the validity of the proposed analysis method, we calculate the normalized scattered power for two propagating modes and compare the results with those obtained by the previous numerical method for the double dipole elements of rectangular type and parallelogram type which have the property of frequency scanned reflection and polarizer. Good correspondence has been observed between them. Some numerical results such as variation of power and axial ratio of first-order diffracted wave by a periodic array of double-dipole elements are compared with previous results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.936-941
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• 2010

In this study, we have investigated the effects of Mn dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;\varepsilon^*$, and $tan\delta$). Admittance spectra and dielectric functions show two bulk traps of $Zn_i^{..}$ (0.20 eV) and $V^{\bullet}_o$ (0.29~0.33 eV) in ZnO-$Bi_2O_3-Mn_3O_4$ (ZBM). The barrier of grain boundaries in ZBM could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.79 eV at lower temperature to 1.08 eV at higher temperature. The grain boundary capacitance $C_{gb}$ was decreased slightly with temperature as 1.3~1.8 nF but resistance $R_{gb}$ decreased exponentially. The relaxation time distribution can result from the heterogeneity of the barriers constituting the varistor. It is revealed that Mn dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.368-373
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• 2010

In this study, we have investigated the effects of Cr dopant on the bulk trap levels and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) varistor using admittance spectroscopy and dielectric functions (such as $Z^*,\;Y^*,\;M^*,\;{\varepsilon}^*$, and $tan{\delta}$). Admittance spectra show more than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states in ZnO-$Bi_2O_3-Cr_2O_3$ (ZBCr) system. Three kinds of temperature-dependant activation energies ($E_{bt}'s$) were calculated as 0.11~0.14 eV of attractive coulombic center, 0.16~0.17 eV of $Zn_{\ddot{i}}$, and 0.33 eV of $V_o^{\cdot}$ as dominant bulk defects. The grain boundaries of ZBCr could be electrochemically divided into two types as a sensitive to ambient oxygen i.e. electrically active one and an oxygen-insensitive i.e. electrically inactive one. The grain boundaries were electrically single type under 460 K (equivalent circuit as parallel $R_{gb1}C_{gb1}$) but separated as double one ($R_{gb1}C_{gb1}-R_{gb2}C_{gb2}$) over 480 K. It is revealed that the dielectric functions are very useful tool to separate the overlapped bulk defect levels and to characterize the electrical properties of grain boundaries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.14-14
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• 2009

In this study, we investigated the effects of Cr dopant on the bulk trap level and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) using dielectric functions such as $Z^*$, $Y^*$, $M^*$, ${\varepsilon}^*$, and $tan{\delta}$. More than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states could be identified in ZBCr($ZnO-Bi_2O_3-Cr_2O_3$). The grain boundaries of ZBCr could be electrochemically divided into two types: sensitive to ambient oxygen and thus electrically active one and oxygen-insensitive and thus electrically inactive one.