• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.267-270
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• 1999

We measured the dielectr~c constant of undoped GaN thin films grown on (0001) sapphire substrates In 0.8 - 4.5 eV energy (276 - 1550 nm wavelength) range by spectroscopic ellipsometry. For more accurate data analysis we also performed X-ray diffraction, photolurninescence and Rutherford backscattering spectroscopy on samples. Data were analyzed with a four-phase model. The dielectric constant of GaN thin films was obtained not only in the transparent region but also around the absorption edge. Absorption edge energy, $3.3992{\pm}0.002$eV was determined from the obtained dielectric function.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.625-629
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• 1999

In this study, in order to develop high sensitivity and low noise acoustic emission sensor, we manufactured the Pb(Zr, Ti)O$_3$ ceramics with the addition of WO$_3$ wt% to search for its required characteristics. Dielectric constant was increased as a function of the increase of WO$_3$ wt%. The Pb(Zr, Ti)O$_3$ (EC-65) ceramics added with 0.1lwt% WO$_3$ showed excellent dielectric constant and piezoelectric constants of 1931 and 199.55$\times$10$^{-12}$ (C/N), respectively. Accordingly It was shown as the composition ceramics suitable for AE sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.178-183
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• 2004

PBT thin film was known to be a representative for the FeRAM devices because of its good ferroelectric proporties and the ease in fabricating the thin film. However, there have been several problems such as polarization fatigue and leakage current in memory devices with a PZT thin film. In this study, Sm-dolled PZT thin films were fabricated by the so1-gel method, and their ferroelectric and dielectric proportrics were compared as a function of Sm content. We investigated the effect of the Sm dopant on structural and electrical properties of PZT film. Sm-doped PZT thin films on the Pt/Ti/SiO$_2$/Si substrates have been prepared by a sol-gel method. The remanent polarization and coercive field decreased with increasing the concentration of Sm. The dielectric constant and dielectric loss decreased with Increasing Sm content. Sm-doped PZT thin films showed improved fatigue characteristics compared to the undoped PZT thin film.

• Journal of the Korean Ceramic Society
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• v.26 no.3
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• pp.297-304
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• 1989

The dielectric properties of SrTiO3 GBL Capacitor have been investigaetd as a function of the second heat treatment time and the amount of Ta. The grain size of semiconductive SrTiO3 after sintering at 1,46$0^{\circ}C$ for 4 hours in N2/H2 atmosphere increased as the amount of Ta increased, and then decreased as the amount of Ta exceed 0.01 mole. Also, the dielectric constant after the second heat treatment showed the same tendency. When the semiconductive SrTiO2 was second heat treated at 1,10$0^{\circ}C$ in air with varying time, the dielectric constant increased as the second heat treatment time increased up to 60 minutes, and then decreased as the time became longer than 60 minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.441-444
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• 2000

In this paper, dielectric properties of XLPE sheets of 22kV cable with semiconducting and water were investigated. The breakdown strength of XLPE under rod/needle electrode were measured at without oil. It is found that the dielectric properties such tan$\delta$ of XLPE sheet dependence on semiconducting and water layer and are decreased much lower increase with temperature. The breakdown strength and the electrode effect are obtained as a function of thickness, and a equation for the sheet thickness dependent breakdown strength is also discussion.

• Journal of Radiation Industry
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• v.4 no.3
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• pp.285-288
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• 2010

Polyimide films have excellent thermal stability, reliable mechanical properties and low dielectric constant. Therefore, this material is widely used in many industrial fields such as microelectronics, flexible circuits, semiconductor products and aerospace materials. In space applications, earth-orbiting hardware operates in environments that generally include neutral particles, charged particles such as trapped protons and electrons, solar protons, and cosmic rays. Under these conditions, polyimide films were changed in the optical, electrical and mechanical properties. Therefore, in this study, we evaluated the effects of electron beam irradiation on polyimide. The O-H functional groups were created on the polyimide film surface in the results of FT-IR spectra. And it was found that the dielectric constants were changed as a function of electron beam dose.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.788-793
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• 2002

The glass-electroceramics were composed of glass composition(CaO, $SiO_2$, $B_2$ $O_3$) and electroceramic composition(BaO, N $d_2$ $O_3$, B $i_2$ $O_3$ and Ti $O_2$) Their dielectric properties have been investigated as a function of sintering temperature and glass contents. In the ceramics composed of 0.16BaO-0.15(N $d_{0.87}$,B $i_{0.13}$)$_2$ $O_3$-0.69Ti $O_2$with glass ［EG-2782］ 3wt% addition and sintered at 108$0^{\circ}C$ for 2h, we could obtain microwave properties of dielectric constant $\varepsilon$$_{r}$ = 80.1, quality factor Q $\times$f = 810(at 3.5 GHz) and temperature coefficient of resonant frequency $\tau$$_{f}$ = -1.3 ［ppm/$^{\circ}C$］. These experimental results show that dielectric constant and temperature coefficient of resonant frequency could be estimated by empirical equations involving the rule of mixture.e.

• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.25-28
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• 2002

In this study, microstructural, dielectric and electrical properties of (Pb$\sub$0.83/) (La$\sub$0.2/Ce$\sub$0.8/)$\sub$0.08/TiO$_3$(PCT) ceramics as a function of MnO$_2$ addition and electrode size variation were investigated for 30 MHz high frequency ceramic resonator application. Grain size was gradually increased according to the increase of MnO$_2$ addition amount. Moreover, the density showed a constant value with increasing MnO$_2$ addition amount. Dielectric constant was decreased with increasing MnO$_2$ addition amount. Curie temperature of all the composition ceramics was nearly constant around 330$^{\circ}C$. The maximum D.R.of 50.5 dB and maximum Q$\sub$mt3/ of 1842 in the 3$\^$rd/ overtone vibration mode were appeared at the composition of 0.3wt% MnO$_2$, respectively.

• Advances in nano research
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• v.1 no.4
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• pp.183-192
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• 2013

One-dimensional multiferroic nanostructured composites have drawn increasing interest as they show tremendous potential for multifunctional devices and applications. Herein, we report the synthesis, structural and dielectric characterization of barium titanate ($BaTiO_3$)-bismuth ferrite ($BiFeO_3$) composite fibers that were obtained using a novel sol-gel based electrospinning technique. The microstructure of the fibers was investigated using scanning electron microscopy and transmission electron microscopy. The fibers had an average diameter of 120 nm and were composed of nanoparticles. X-ray diffraction (XRD) study of the composite fibers demonstrated that the fibers are composed of perovskite cubic $BaTiO_3$-$BiFeO_3$ crystallites. The magnetic hysteresis loops of the resultant fibers demonstrated that the fibers were ferromagnetic with magnetic coercivity of 1500 Oe and saturation magnetization of 1.55 emu/g at room temperature (300 K). Additionally, the dielectric response of the composite fibers was characterized as a function of frequency. Their dielectric permittivity was found to be 140 and their dielectric loss was low in the frequency range from 1000 Hz to $10^7$ Hz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.759-762
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• 2010

In this investigation, the effects of $N_2/(Ar+N_2)$ gas partial pressure on the structural, electrical, and thermal properties of AlN dielectric layers prepared on aluminum substrates using RF-magnetron sputtering method were analyzed. Among the films, the AlN dielectric film deposited under $N_2/(Ar+N_2)$ gas partial pressure of 75% exhibit the highest AlN (002) preferred orientation, which was grain size of about 15.32 nm and very dense structure. We suggest the possibilities of it's application as a dielectric layer for metal PCB because the AlN films prepared at optimized gas partial pressure can improving the insulating property, the thermal conductivity, and thermal diffusivity of the films.