• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1456-1458
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• 1998

The $(Sr_{1-x}Ca_x)TiO_3(SCT)$ thin films were deposited at various substrate temperature using rf magnetron sputtering method on optimized Pt-coated electrodes ($Pt/TiN/SiO_2/Si$). The dielectric constant changes almost linearly in the temperature region of $-80{\sim}+90[^{\circ}C]$, the temperature characteristics of the dielectric loss exhibited a stable value within 0.1. The capacitance characteristics appears a stable value within ${\pm}5$[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. Dielectric constant of SCT thin films deposited on Si wafer substrate are larger with the increase of deposition temperature.

• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.116-120
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• 2009

Ceramic-polymer composites have been investigated for their suitability as embedded capacitor materials because they combine the processing ability of polymers with the desired dielectric properties of ceramics. This paper discusses the dielectric properties of the ceramic ($BaTiO_3$)-polymer (Epoxy) composition as a function of ceramic particle size at a ceramic loading of 40 vol%. The dielectric constant of these ceramic-polymer composites increases as the powder size decreases. Results show that ceramic-polymer composites have a high dielectric constant associated with the $BaTiO_3$ powder with a 200 nm particle size, high insulation resistance, high breakdown voltage (> 22 KV/mm), and low dielectric loss (0.018-0.024) at 1 MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.119-122
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• 2003

This paper describes characteristics for insertion losses of Isolator have an effect on material parameter. One purpose of the paper is to present insertion loss on this resonator for magnetic loss, dielectric loss, magnetic field and saturation magnetization. Another is to study the effect of propeller resonator on response characteristics. In this paper, the analysis and measurement of the response characteristics were carried out for the isolator prototype. The measurement results agreed on the simulation results and acquire insertion loss $0.18\;{\sim}\;0.24dB$, return loss 27dB, isolation 27dB and bandwidth 500MHz on this condition saturation magnetization 550G, dielectric loss 0.0004, magnetic loss 20 and dielectric constant 14.

• 한국세라믹학회지
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• 제50권1호
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• pp.87-91
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• 2013

The doping effect of Sn on the microstructure evolution and dielectric properties was studied in $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals. Samples were produced by a conventional solid-state reaction method. Sintering was carried out at $1115^{\circ}C$ for 2-16 h in air. The dielectric constant and loss were examined at room temperature over a frequency range between $10^2$ and $10^6$ Hz. The microstructure was found to evolve into three stages. Addition of $SnO_2$ led to an increase in density and advanced formation of abnormal grains. The formation of coarse grains with a reduced thickness of the boundary brought about an enhanced dielectric constant and a lower dielectric loss below ~1 kHz. EDS data showed the Cu-rich phase along the grain boundary, which should contribute to the improved dielectric constant according to the internal barrier layer capacitor model. After all, $SnO_2$ was an effective dopant to elevate the dielectric characteristics of $CaCu_3Ti_{4-x}Sn_xO_{12}$ polycrystals as a promoter for abnormal grain growth.

• 대한기계학회논문집A
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• 제26권6호
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• pp.1001-1007
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• 2002

To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

• 대한전자공학회논문지
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• 제7권2호
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• pp.43-48
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• 1970

마이크로파주파수 대역에서 비자성체의 정밀한 유전상수를 구하는 방법을 서술하였다. 재래식 방법인 공동공진법이나 임피이던스 측정에 의한 방법보다 정밀한 결과를 얻을 수 있었고 간단한 계산식에 대입하여 비교적 적은 오차범위에서 쉽게 결과를 얻을 수 있음을 증명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1250-1251
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• 2008

In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.309-313
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• 1997

(Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.