• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.4
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• pp.393-400
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• 2012

In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.361-361
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• 2012

PZT (Pb(Zr,Ti)O3) thin films have been used widely in the MEMS application, due to their inherent ferroelectric and piezoelectric properties. Such ferroelectricity induces much higher dielectric constants compared to those of the nonperovskite materials. In this work, the PZT thin films were deposited onto Indium-Tin-oxide (ITO) substrates through the spin-coating of PZT sols. The deposited PZT thin films were characterized in terms of the electrical and optical properties with special emphases on conductivity and optical constants. The detailed analysis techniques incorporate the dc-based current-voltage characteristics for the electrical properties, spectroscopic ellipsometry for optical characterization, atomic force microscopy for surface morphology, X-ray Photoelectron Spectroscopy for chemical bonding, Energy-dispersive X-ray Spectrometry for chemical analyses and X-ray diffraction for crystallinity. The ferroelectric phenomena were confirmed using capacitance-voltage measurements. The integrated physical/chemical features are attempted towards energy-oriented applications applicable to next-generation high-efficiency power generation systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.661-664
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• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• Journal of the Korea Institute of Military Science and Technology
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• v.18 no.2
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• pp.139-145
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• 2015

In this paper, the flexible piezoelectric nanocomposite generator(NCG) device based on $BaTiO_3$ nanostructures was fabricated via simple and low-cost spin coating method. The $BaTiO_3$ nanostructures synthesized by self-assembly reaction showed dendrite morphologies. To produce the piezoelectric nanocomposite(p-NC layer) which acts as an electric energy source in NCG device, the piezoelectric nanopowders($BaTiO_3$) were dispersed in polydimethylsiloxane(PDMS). Sequently, the p-NC layer was inserted in two dielectric layer of PDMS; these layers enabled the NCG device flexibility as well as durability prohibiting detachment(exfoliation) for significantly mechanical bending motions. The fabricated NCG device shows average maximum open circuit voltage of 6.2 V and average maximum current signals of 300 nA at 20 wt% composition of $BaTiO_3$ nanostructures in p-NC layer. Finally, the flexible energy harvester generates stable output signals at any rate of frequency which were used to operate LCD device without any external energy supply.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.329-334
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• 2002

This study evaporates TiO$_2$ layer thickness differently with RF sputtering method on Si Wafer(n-100). Thin film is made with the structure of Si+TiO$_2$ and Si+TiO$_2$+Al by evaporating TiN which is used as Antireflection of superintegrated semiconductor integrated circuit with Photo Catalyst. The research is performed to increase the characteristics of photon energy according to TiO$_2$ thickness and the reliability and reproducibility of TiO$_2$ thin film. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant ($\varepsilon$$_1$, $\varepsilon$$_2$) has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Transactions on Electrical and Electronic Materials
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• v.12 no.5
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• pp.222-225
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• 2011

Lead zirconate titanate (PZT) films were fabricated on Pt/Ti/$SiO_2$/Si substrate by the sol-gel method using a sol containing poly(N-vinylpyrrolidone) (PVP). PVP in alkoxide solutions can suppress the condensation reaction in gel films during heat treatment, and increase the viscosity of alkoxide solutions. Single-phase PZT films as thick as 1 ${\mu}m$ were deposited by repetitive coating with successive third-step heat treatments at 150$^{\circ}C$, 350$^{\circ}C$ and 650$^{\circ}C$. After heat treatment, the films were crack free, and optically transparent. As a result, we demonstrated a PZT film with a PVP molar ratio of 0.5, which has a permittivity of 734, a dielectric loss of 0.042, a $P_r$ of 40.5 ${\mu}C/cm^2$ and an $E_c$ of 156 kV/cm.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.4
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• pp.123-130
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• 2013

Zirconia is well known in industrial applications for its mechanical characteristics. DLC (diamond-like carbon) have high elastic modulus, high electric resistivity, high dielectric constant, high wear resistance, low friction coefficient, bio compatibility, chemically inert and thermally stable. Because of all these physical and chemical properties these types of coatings have become key procedure for thin coating. Friction coefficient of DLC films is already evaluated and the current work is a further advancement by calculating the fracture toughness and wear resistance of these coatings. In the present study DLC thin film coatings are developed on $ZrO_2$ alloy surface using Plasma Enhanced Chemical Vapor Deposition (PECVD) method. Vicker hardness test is employed and it was concluded that, DLC coatings increase the Vickers hardness of ceramics.

• Journal of Korean Society for Atmospheric Environment
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• v.28 no.6
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• pp.675-687
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• 2012

Applying an external electric field across air filter media is one of methods to improve the filtration performance. Metal wire meshes have been commonly used as electrodes situated on both sides of a thick filter pad. For a thin filter medium a short circuit, known as the biggest drawback for applying an external electric field to air filter, can occur at the closest point between electrodes. In this study several types of insulated meshes were prepared by coating #50 meshes with a dielectric material, Nylon 66, and the filtration property of air filter was evaluated at the presence of external electric field using those insulated meshes as electrodes and compared with that of filters using bared meshes. The collection efficiency of tested filter was increased from 78% to 95% for singly charged 100 nm particles by application of external electric field. As a result, there was no significant difference in collection efficiency between filters with insulated and bared electrodes. Similar results could be also seen from the tests using polydisperse particles. Finally, through this study, we found that the insulation of mesh electrodes doesn't affect the filtration performance of fibrous air filter under external electric field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.339-342
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• 1998

Ferroelectric L $a_2$ $Ti_2$ $O_{7}$(LTO) thin films were prepared by chemical solution deposition processes. Acetylacetone was used as chelating agent and nitric acid was added in the stock solution to control hydrolysis and condensation reaction rate. The LTO thin films were spin-coated on Pt/Ti/ $SiO_2$/(100)Si and Pt/Zr $O_2$/ $SiO_2$/(100)Si substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. The role of acetylacetone in Ti iso-propoxide stabilization by possibly substituting $O^{i}$Pr ligand was studied by H-NMR. B site-rich impurity phase, i.e. L $a_4$ $Ti_{9}$ $O_{24}$, was found after annealing, where its appearance was dependent on process temperature indicating the possible reaction with substrate. Dielectric and other relevant electrical properties were measured and the results were compared between modified sol-gel and MOD processes.s.s.