• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.213-216
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• 1995

Strontium niobate, $Sr_2Nb_2O_{7}$ was prepared by the molten stilt synthesis (MSS) and the chemical coprecipitation method (CCP). Single phase $Sr_2Nb_2O_{7}$ was obtained by MSS and CCP at $750^{\circ}C$ and $800^{\circ}C$, respectively. An intermediate phase of composition, $Sr_{5}Nb_4O_{15}$, appeared at $700^{\circ}C$ when CCP method was employed. The resulting powder was observed to have finer particles and more uniform distribution of particle sizes, as compared to those obtained through the conventional method. Such powder characteristics allowed the use of a much lower sintering temperature of $1400^{\circ}C$. Grain-orientation along (0k0) direction, which is advantageous for improving dielectric properties, was also observed. The sintering characteristics and the dielectric properties prepared by MSS and CCP, were better than those by the conventional method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.42-45
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• 2001

The high permittivity are applied to DRAM and FRAM. (Ba,Sr)$TiO_3$ (EST) thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on $Pt/SiO_2/Si$ substrate at 4000 [rpm] for 10 seconds in a time coating. Coated specimens were dried at $90[^{\circ}C]$ for 5 minutes. Coating process was repeated from 3 times to 5 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about 2600-2800[$\AA$] in 3 times. Dielectric constant of thin films was little decreased at 1[KHz]~1[MHz]. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. The property of leakage current was stable When the applied voltage was 0~3[V] Leakage current was $10^{9}\sim10^{11}$[A] at 0~3[V].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.228-229
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• 2006

본 연구에서는 초음파 모터 등의 고출력 액츄에이터에 응용 가능한 $04Pb(Ni_{1/3}Nb_{2/3})O_3-6Pb(Zr_xTi_{1-x})O_3$ 조성시스템에 소결온도를 달리하여 압전, 유전특성 및 미세구조에 관해 고찰하였다. 본 조성을 $1200^{\circ}C$ 온도에서 2, 4, 6, 8시간 소결하여 시편을 제조하였으며 이의 결정구조 및 미세조직을 분석하였다. 소결시간 증가에 따라 전기기계결합계수와 기계적품질계수는 증가하였으며, 압전상수는 Zr(Zr+Ti)비 0.390까지 증가하였으나 그 이상 증가함에 따라 감소하였다. 압전특성은 $1200^{\circ}C$에서 4시간 소결한 Zr=0.390인 조성에서 ${\varepsilon}_r$ = 4487, $k_p$ = 0.72. $d_{33}$ = 710, $Q_m$ =109의 우수한 특성을 나타내었다.

• 마이크로전자및패키징학회지
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• 제8권2호
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• pp.9-13
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• 2001

$(Ba_{0.5}Pb_{0.5})Nd_2Ti_5O_{14}$(마이크로파 유전체 세라믹스에 borosilicate계 유리를 첨가하여 저온소결 특성과 마이크로파 특성을 조사하였다. Borosilicate계 유리가 2~3 wt% 첨가된 경우 $950^{\circ}C$의 소결 온도에서 소결성이 향상됨과 동시에 품질계수도 놀아지는 것을 확인할 수 있었다. BPNT에 3 wt%의 유리를 첨가함으로써 $950^{\circ}C$에서 유전율은 90에서 75 정도로 약간의 감소를 보였으나 마이크로파 품질계수 (Q$\times$f)는 4500 정도로 잘 유지되었고 공진주파수의 온도계수도 +10 $ppm/^{\circ}C$로서 잘 유지되는 결과를 나타내었다.

• 한국세라믹학회지
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• 제33권8호
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• pp.895-900
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• 1996

수산염볍으로 Ba(Ti1-xSnx)4O9 분말을 합성하였다. Ti자리에 Sn이 치환되면 생성된 BaTi4O9은 고용체를 형성하기 때문에 안정화되었다. BaTi4O9 결정상의 생성을 위한 최적 고용량은 0.16mole이었으며, 그 이상 첨가시는 BaTi4O9 결정 성장을 억제하였다. 0.16mole Sn을 첨가하여 135$0^{\circ}C$에서 30분 소결하였을 때 긴 막대형의 결정이 가장 잘 발달하였고, 이때 Q값이 가장 높았다. 그러나 Sn 첨가량이나 소결 유지시간을 변화시켜도 유전율은 거의 일정하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.677-680
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• 2003

The effect of $B_2O_3$ addition on the sintering behavior and microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ ceramic system were investigated. Highly dense samples were obtained at the sintering temperatures below $900^{\circ}C$. Temperature coefficient of resonance frequency(${\tau}_f$) changes to a positive value with increasing the amount of $B_2O_3$ because of the increased amount of rutile phase. The $Q{\times}f_o$ values were determined by the microstructures and sintering shrinkages which are affected by the rutile or second phase. When 6.19 mol.% of $B_2O_3$ added and sintered at $900^{\circ}C$ for 5h, it exhibits ${\epsilon}_r$ =23.5, $Q{\times}f_o$= 67,500 GHz, and ${\tau}f=-1.42ppm/^{\circ}C$.

• 한국세라믹학회지
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• 제42권7호
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• pp.449-454
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• 2005

A waveguide method is developed to study the materials with relatively large dielectric constants at microwave range. Basically, the method is similar to the previous waveguide methods represented by short-circuit line and transmission/reflection measurement methods. However, the complex permittivity is not determined by the shift in resonance frequencies, but by numerical analysis of measured scattering parameters. In order to enhance microwave penetration into the specimen with relatively large permittivity, a dielectric plate with lower permittivity is employed for impedance matching. The influences of air gap between the specimen and waveguide wall are evaluated, and the corresponding errors are estimated. The propagation of higher order modes is also considered. Experimental results for several reference ceramics are presented.

• 한국세라믹학회지
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• 제27권7호
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• pp.934-942
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• 1990

The quarternary system ceramics 0.5[yPb(Zn1/3Nb2/3)O3-(1-y)Pb(Ni1/3Nb2/3)O3]-0.5[xPbTiO3-(1-x)PbZrO3](PZN-PNN-PT-PZ) was fabricated by the columbite precursor method to obtain a stabilized perovskite structure and by conventional method to evaluate the efficiency of the former methd. Dielectric and piezoelectric properties were investigated and the stability of the perovskite phase was studied as a function of PZN and PT contents and firing temperature. In the samples prepared by the columbite precursor method, the pyrochlore phase, which is detrimental to both the dielectric and piezoelectric properties, was not observed in the absence of PZN, and electric properties were improved even when fabricated at low temperature. By adding PZN, some pyrochlore phase appeared and the morphotropic phase boundary of the samples shifted to more Zr-rich composition. The temperature dependence of piezoelectric constant decreased with the addition of PZN, due to the rising of the Curie point.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.213-225
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• 2002

Metal-Ferroelectric- Insulator- Silicon (MFIS) structured field effect transistor (FET) device was fabricated and characterized. Important issues to realize ferroelectric gate field effect transistor device were summarized in three sections. The choice of interlayer dielectric was made in the consideration of device functionality and chemical reaction between ferroelectric materials and silicon surface during fabrication process. Also, various ferroelectric thin film materials were taken into account to meet desired memory window and process compatibility. Finally, MFIS structured FET device was fabricated and important characteristics were discussed. For feasible integration of current device as random access memory array cell address schemes were also suggested.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.71-73
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• 2005

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(20/80) and PZT(80/20) paste were made and alternately screen-printed on the alumina substrates. The coating and drying procedure was repeated 4 times to form the heterolayered thick films. The thickness of the PZT heterolayered thick films was approximately 60 mm. All PZT thick films showed the typical XRD patterns of a perovskite polycrystalline structure. The relative dielectric constant and the dielectric loss of the PZT thick films sintered at $1050^{\circ}C$ were 1382 and 1.90%, respectively. The remanent polarization and coercive field of the PZT thick films sintered at $1050^{\circ}C$ were $14.15{\mu}C/cm^2$ and 19.13kV/cm, respectively.