• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.6
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• pp.843-850
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• 1990

A numerical method is presented for determining the static charge distribution and the capacitance of a round disk capacitor. In the employed numerical scheme annular patch subdomains are introduced to reduce the matrix size and to mprove the accuracy of the numerical calculations. The method of moments is utilized to calculate the charge distribution, and the capacitance and equipotential lines are also found from the numerically computed charge distributions. To show the validity of the results the proposed method is applied to the round disk and the dielectric filled capacitor.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.586-589
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• 2012

In this paper, a tunable capacitor like an interdigital one is presented for low-voltage applications. In order to reduce operation voltage by enhancing fringing electric fields, two finger-patterned electrodes are vertically separated by employing a multi-layer thin film dielectric of a para-/ferro-/para-electrics without spacing between electrodes. The proposed tunable capacitor was fabricated on a quartz wafer and its characteristics are analyzed in terms of effective capacitance and tunability with a function of applied voltages, compared to the conventional interdigital capacitor (IDC). At 8V and 2 GHz, the proposed tunable capacitor shows the tunability of 18 % that is 10.3 % higher than that of the compared one.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.318.1-318.1
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• 2016

Hafnium Oxide (HfOx) has been attracted as a promising gate dielectric for replacing SiO2 in gate stack applications. In this paper, Metal-Oxide-Semiconductor (MOS) capacitor with solution processed HfO2 high-k material as a dielectric were fabricated. The solvent using $HfOCl2{\cdot}8H2O$ dissolve in 2-Methoxy ethanol was prepared at 0.3M. The HfOx layers were deposited on p-type silicon substrate by spin-coating at $250^{\circ}C$ for 5 minutes on a hot plate and repeated the same cycle for 5 times, followed by annealing process at 350, 450 and $550^{\circ}C$ for 2 hours. When the annealing temperature was increased from 350 to $550^{\circ}C$, capacitance value was increased from 337 to 367 pF. That was resulted from the higher temperature of HfOx which have more crystallization phase, therefore dielectric constant (k) was increased from 11 to 12. It leads to the formation of dense HfOx film and improve the ability of the insulator layer. We confirm that HfOx layer have a good performance for dielectric layer in MOS capacitors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.129-132
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• 1992

Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10～150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.30-36
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• 2009

The effects of $HfO_2$ film thickness on electrical, optical, and structural properties were investigated. We fabricated ITO/$HfO_2$/ITO metal-insulator- metal (MIM) capacitor using transparent conducting oxide. When $HfO_2$ film thickness increase from 50 nm to 300 nm, dielectric constant of $HfO_2$ was decreased from 20.87 to 9.72. The transparent capacitor shows an overall high performance, such as a dielectric constant about 21 by measuring the ITO/$HfO_2$/ITO capacitor structures and a low leakage current of $2.75{\times}10^{-12}\;A/cm^2$ at +5 V. Transmittance above 80% was observed in visible region.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.182-186
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• 2013

We studied the possibility that an air capacitor can be used as a humidity sensor by measuring capacitance change. In order to investigate the possibility, the change of capacitance of an air capacitor due to moisture in air was first considered theoretically, and was then experimentally verified. The capacitance was measured by an LCR impedance meter with a 100-kHz and 1-V ac. The results revealed that the changes in the experimentally measured capacitances were greater than those in the theoretically calculated values. Based on this fact, we knew that an air capacitor could be used as part of a humidity sensing device. We expect the humidity sensor with an air capacitor has characteristics of fast response time, high reliability, and high durability compared with other conventional methods.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.137-143
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• 2008

High voltage MLCCs with C0G temperature coefficient characteristics could apply DC-DC invertor were investigated for its dielectric properties. Also we manufactured MLCC through various process and studied the characteristics of dielectric break down voltage [BDV] and dielectric property as the variation of thickness in the green sheet and how to pattern the internal electrode. As the thickness of green sheet is increase, the dielectric BDV per unit thickness is decreased. But as the pattern of internal electrodes were floated we could manufacture the high voltage MLCC maintained its dielectric BDV a unit.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.216-221
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• 2010

Employing statistical design of experiments, the difference in doping behaviors of rare-earth ions and their effects on the dielectric property and microstructure of $BaTiO_3$-MgO-$MnO_2$-($Ba_{0.4}Ca_{0.6}$) $SiO_3-Re_2O_3$ (Re = $Y_2O_3$, $Er_2O_3$) system were investigated. Through the statistical analysis we have found that the amount of $Re_2O_3$ are significantly affecting on the dielectric properties. The $Re_2O_3$ improved the dielectric constant, dielectric loss and R*C constant, so the appropriate contents of $Y_2O_3$ and $Er_2O_3$ were 0.8 ~ 1.2 mol% and 0.8 ~ 1.3 mol%, respectively. The MLCC(mutilayer chip capacitor) with $2.0{\times}1.2{\times}1.2mm$ size and 475 nF was also suited for X7R with the above composition. It showed that the dielectric constant and RC constant were 2,839 and 3,675 ${\Omega}F$, respectively in the sintering condition at $1250^{\circ}C$ in $Po_2$ $10^{-7}$ Mpa.