• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.75-80
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• 2006

In this paper, to detect and observation the void discharges pulse signal, AE signals and tree growth characteristics in case the high voltage is applied to a XLPE sample for a power cable. We also examined the partial discharge current pulse and AE signals with the increase of the applied voltage in XLPE insulation. The experimental results show that a branch-type tree grows in the presence of the voids, and a bush-type tree grows in the absence of the voids in both samples. A rate of tree growth increases abruptly in proportional to the deterioration time in the presence of the of the voids, but in the absence of the voids, a rate of tree growth decreases as time goes by and finally a breakdown occurs. The frequency band of AE signals that are generated from the partial discharges in a XLPE sample, one of solid dielectric materials, is about 1.0[MHz].

• Journal of the Korean institute of surface engineering
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• v.54 no.1
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• pp.30-36
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• 2021

In this study, double-layered anodizing films were formed on Al 5052 and Al 6061 alloys consecutively first in sulfuric acid and then in oxalic acid, and hardness, withstand voltage, surface roughness and acid resistance of the anodizing films were compared with single-layered anodizing films in sulfuric acid and oxalic acid electrolytes. Hardness of the double-layered anodizing film decreased with increasing ratio of inner layer to outer layer for both Al 5052 and Al 6061 alloys, suggesting that outer anodizing film formed in sulfuric acid electrolyte is damaged during the second anodizing in oxalic acid electrolyte. Withstand voltage of the double-layered anodizing films increased with increasing the thickness ratio of inner layer to outer layer. Surface roughness of the double-layered anodizing films were comparable with that of single-layered anodizing film formed in sulfuric acid but higher than that of single layer anodizing film formed in oxalic acid electrolyte. In acid resistance test, all of the double-layered and single-layered anodizing films showed good acid resistance more than 3 h without any visible gas evolution, which is attributable to sealing of pores. Based on the experimental results obtained in this work, it is possible to design a double-layered anodizing film with cost-effectiveness and improved physical and electrical properties by combining two consecutive anodizing processes of sulfuric acid anodizing and oxalic acid anodizing methods.

• Journal of Advanced Marine Engineering and Technology
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• v.38 no.1
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• pp.48-55
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• 2014

These Xenon flashlamp power supply for Ultra Violet has converter with high voltage conversion ratio. General model is composed of transformer with high voltage conversion ratio and voltage doubler rectifier circuit. Purpose of power supply leads dielectric breakdown of Xenon flashlamp and passes current rapidly. When passing current, it has to limit current to avoid over-heat, damage of electrode and acceleration of gas oxidation which are cause of performance degradation of lamps. Generally, inductors and resistors, which are called as "Ballast," are used to limit currents. Generally, Transformer has high turn ratio to make high voltages. But we can get high voltages using the transformer with low turn ratio which is driven with self resonance. Also, an advantage of self resonance is to make a circuit simply through impedance of transformer in resonance frequency which filters output voltage. As using an unique impedance of transformer, the circuit does not need other impedance elements like the ballast. So the power supply assures high efficiency of the arc discharge.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Applied Chemistry for Engineering
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• v.2 no.3
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• pp.253-261
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• 1991

Polyamic acids, precursor polymers of polyimides have been obtained by the solution polycondensation of benzophenone tetracarboxylic dianhydride (BTDA) with 4, 4'-diamino diphenyl methane (MDA) and/or 3, 3'-dimethyl benzidine (OTB). The reaction was carried in two solvent systems such as m-cresol and m-cresol/xylene mixture. The results of TGA analysis showed that the polyimide films had good thermal stability with the initial decomposition temperature ranging from $540^{\circ}$ to $590^{\circ}$. According to DSC analysis of polymers, the glass transition temperature was over $340^{\circ}$. Polyimide film samples, showed good mechanical and electrical properties, had over $16Kg/mm^2$ of tensile strength and about 200 KV/mm of dielectric breakdown voltage. The properties of the copolymer from MAD/OTB were better than those of the homopolymer from MDA. And the polymer synthesized in m-cresol had lower properties than that obtained in m-cresol/xylene.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.10 no.5
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• pp.94-100
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• 1996

Criteria for insulating oil condition of pole transformer were suggested by applying the UV-Visible spectrophotometric method. Aging of insulating oil caused the change in absorbances of oil as well as the deterioration of electrical properties of oil. By comparing the electrical properties such as tan$\delta$ and dielectric breakdown voltage with the UV-Visible absorbances of oil, following criteria for absorbance values determining oil condition were established, fair condition is below 0.580, need attention is 0.580-0.900 and poor condition is above 0.900. This W-Visible spectrophotometric method may be applied in aging analysis of oil and expected to replace the current visual method. It is necessary to develop cheap, light and portable UV-Visible spectrophotometer in near future for field application.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.117-123
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• 2018

Recently, aqueous method has attracted lots of attention because it enables the solution-processed metal oxide thin film with high electrical properties in low temperature fabrication condition to various flexible devices. Focusing the development of aqueous route, many researchers are only focused on metal oxide materials. However, for expansive application of the aqueous-based metal oxide films, the systematic study of performance change with process variables for the development of aqueous-based metal oxide insulator film is urgently required. Here, we propose importance of process variables to achieve high electrical-performance metal oxide insulator based on the aqueous method. We found that the significant process variables including precursor solution temperature and humidity during the spincoating process strongly affect chemical, physical, and electrical properties of $AlO_x$ insulators. Through the optimization of significant variables in process, an $AlO_x$ insulator with a leakage current value approximately $10^5$ times smaller and a breakdown voltage value approximately 2-3 times greater than un-optimized $AlO_x$ was realized. Finally, by introducing the optimized $AlO_x$ insulators to solutionprocessed $InO_x$ TFTs, we successfully achieved $InO_x/AlO_x$ TFTs with remarkably high average field-effect mobility of ${\sim}52cm^2V^{-1}\;s^{-1}$ and on/off current ratio of 106 at fabrication temperature of $250^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.17 no.3
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• pp.175-182
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• 2008

This study is concerned with the evaluation of the corrosion resistance of coated semiconductor equipment parts with various processes. To select the appropriate basis for evaluation, replacement parts were observed during the semiconductor manufacturing process. This study also ran a dry corrosion test using $Al_2O_3$, which is mostly used as a coating material. This test quantitatively measured the efficiency of coated parts. Surface morphology, leakage current and breakdown voltage were also evaluated. This study showed that a dry corrosion process led to the drop of electrical properties, for example, the leakage current increase and the dielectric strength decrease. The surface morphology test displayed that surface damage is largely dependent on the exposure time to corrosive environments. By using the values that changed during the corrosion process, it may be possible to contrive a method to evaluate the efficiency of coated parts with various processes.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.