• 한국표면공학회지
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• 제28권4호
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• pp.236-242
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• 1995

This paper describes a study of electrical tree growth in DGEBA/MDA/SN system subjected to ac high electric field. The dielectric breakdown process, which consists of tree initiation, tree propagation and the complete puncture of the system was investigated. Dielectric breakdown always initiated from the needle tip where the electric field reinforcement is the highest. Higher temperature and voltage accelerated the tree growth and reduced the time to breakdown.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.477-479
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• 1987

An understanding of dielectric breakdown characteristics in cryogenic liquids is of importance in the development of various cryogenic and superconducting electrical equipments. This investigation describes measurements of pulse breakdown voltage, polarity effect, conditioning effect and time lag characteristics of cryogenic liquids.

• 한국정보전자통신기술학회논문지
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• 제16권4호
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• pp.173-179
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• 2023

본 논문에서는 4세대 VNAND 공정으로 만들어진 Peri 소자의 스트레스 영역 별 time-dependent dielectric breakdown(TDDB) 열화 메커니즘을 분석하고, 기존의 수명 예측 모델보다 더 넓은 신뢰성 평가 영역에서 신속성과 정확성을 향상시킬 수 있는 수명 예측 보완 모델을 제시하였다. SiON 절연층 nMOSFET에서 5개의 Vstr 조건에 대해 각 10번의 constant voltage stress(CVS) 측정 후, stress-induced leakage current(SILC) 분석을 통해 저전계 영역에서의 전계 기반 열화 메커니즘과 고전계 영역에서의 전류 기반 열화 메커니즘이 주요함을 확인하였다. 이후 Weibull 분포로부터 time-to-failure(TF)를 추출하여 기존의 E-모델과 1/E-모델의 수명 예측 한계점을 확인하였고, 각 모델의 결합 분리 열화 상수(k)를 추출 및 결합하여 전계 및 전류 기반의 열화 메커니즘을 모두 포함하는 병렬식 상호보완 모델을 제시하였다. 최종적으로 실측한 TDDB 데이터의 수명을 예측할 시, 기존의 E-모델과 1/E-모델에 비해 넓은 전계 영역에서 각 메커니즘을 모두 반영하여 높은 스트레스에서 신속한 신뢰성 평가로 더 정확한 수명을 예측할 수 있음을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 하계학술대회 논문집
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• pp.275-278
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• 1990

This study investigated electrical characteristics of solid and liquid epoxy rosins by measuring dielectric breakdown and dielectric loss when epoxy resins were exposed to a mixing cure, i.e., Fusion Blend Method. It was found that mixing epoxy resins were superior to dielectric breakdown and has shorter curing time compare with those of pure liquid epoxy resins.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.95-97
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• 1990

This study investigated electrical characteristic of solids and liquid epoxy resins by measuring dielectric breakdown and dielectric loss when epoxy resins were exposed to a mixing cure. It was found that mixing epoxy resins were superior to dielectric breakdown and hardness and has shorter curing time compare with those of pure liquid epoxy resins.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 추계학술대회 논문집
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• pp.11-13
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• 1992

The dielectric reliability of the Thin $SiO_2$ films of wet oxidation on n-type Si substrates has been studied by using self-healing method of breakdown and according to injection time high frequence C-V tests. These experiments have been performed to investigate the dielectric breakdown mechanism of a thin film in which positive charge generation during high-field Fowler-Nordheim tunneling are considered. In addition, The weak spots and robust areas are distinguished so that the localized dielectric breakdown could be described.

• 대한안전경영과학회지
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• 제3권4호
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• pp.45-52
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• 2001

In order to Investigate water tree degradation behavior on XLPE cable, direct voltage of 200 to 800V has been applied to the material at 5$0^{\circ}C$~10$0^{\circ}C$, and the water tree property has been correlated with voltage and temperature. The leakage current was increase as temperature increased and the Ohm's law was generally satisfied in this experiment though some experimental errors were found. The leakage current was decreased and reached to the stable state with time. It was also shown that the time for the stabilization of leakage current was lessened as voltage increased

• 한국산업정보학회논문지
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• 제17권3호
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• pp.27-34
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• 2012

This paper presents the impact of time dependent dielectric breakdown (TDDB, also called as gate oxide breakdown) failure on nanoscale digital CMOS Circuits. Recently, TDDB for ultra-thin gate oxides has been considered as one of the critical reliability issues which can lead to performance degradation or logic failures in nanoscale CMOS devices. Also, leakage power in the standby mode can be increased significantly. In this paper, TDDB aging effects on large CMOS digital circuits in the 45nm technology are analyzed. Simulation results show that TDDB effect on MOSFET circuits can result in more significant increase of power consumption compared to delay increase.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 하계종합학술대회논문집
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.437-440
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• 2000

In this study, the interfacial dielectric breakdown phenomenon of interface between Epoxy and Rubber was discussed, which affects the stability of insulation system of power delivery devices. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long time breakdown life time can be evaluated.