1 |
C. Y. Park, J. H. Yeo, "A study on the characteristics of a rectifying circuit for wireless power transmission using a passive RAID system," Journal of the Korea Industrial Information System Society , V.16, No.4, pp. 1-7, 2011.
과학기술학회마을
|
2 |
C. Y. Park, "A CMOS Temperature Control Circuit for Direct Mounting of Quartz Crystal on a PLL Chip," Journal of the Korea Industrial Information System Society , V.12, No.2, pp. 79-84, 2007.
과학기술학회마을
|
3 |
A. B. Kahng, "Design challenges at 65nm and beyond," Proceeding of IEEE DATE Conference, pp.1-2, March 2007.
|
4 |
J. W. McPherson, "Reliability challenges for 45nm and beyond," Proceeding of IEEE Design Automation Conference, pp. 176-181, July 2006.
|
5 |
X. Li, J. Qin, J. B. Bernstein, "Compact modeling of MOSFET wearout mechanisms for circuitreliability simulation," IEEE Transactions on Device and Materials Reliability, Vol. 8, Issue 1, pp. 98-121, March 2008.
DOI
|
6 |
M. Choudhury, V. Chandra, K. Mohanram, R. Aitken, "Analytical model for TDDB- based performance degradation in combina- tional logic", Proceeding of IEEE DATE Conference, pp. 423-428, 2010.
|
7 |
T. Nigam et al., "Accurate model for timedependent dielectric breakdown of high-k metal gate stacks," International Reliability Physics Symposium, pp. 523-530, 2009.
|
8 |
B. Kaczer, R. Degraeve, "Gate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliability", Microelectronics Reliability, vol 47, pp. 559-566, May 2007.
DOI
|
9 |
H.C. Lin, D.Y. Lee, C.Y. Lee, T.S. Chao, T.Y. Huang, and T. Wang, "New insights into breakdown modes and their evolution in ultrathin gate oxide," International Symposium on VLSI Technology, pp. 37-40, 2001.
|
10 |
H. Wang et al.," Impact of random soft oxide breakdown on SRAM energy / delay drift," IEEE Transactions on Device and Materials Reliability, pp. 581-591, Dec. 2007.
|
11 |
B. Kaczer et al., "Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability," IEEE Transactions on Electron Devices, vol. 49, pp. 500-506, 2002.
DOI
|
12 |
R. Rodriguez et al., "Oxide breakdown model and its impact on SRAM cell functionality," International Conference of SISPAD, pp. 283-286, 2003.
|
13 |
S. S. Lombardo, J. H. Stathis, B. P. Linder, K. L. Pey, F. Palumbo and C. H. Tung, "Dielectric breakdown mechanisms in gate oxides," Journal of Applied Physics, 98(12), pp. 1-36, 2005.
|