• 제목/요약/키워드: Dielectric Structure

검색결과 1,497건 처리시간 0.035초

개방형 유전체 구조를 갖는 교류형 플라즈마 디스플레이의 방전 특성 연구 (Study on Discharge Characteristics in AC Plasma Display Panel with Open Dielectric Structure)

  • 조병권
    • 한국전기전자재료학회논문지
    • /
    • 제25권11호
    • /
    • pp.906-909
    • /
    • 2012
  • The address discharge characteristics of a open dielectric structure compared with the conventional panel structure are investigated by measuring the discharge firing voltage. The open dielectric structure could easily produce the discharge between the scan and the sustain electrodes by erasing the dielectric layer between two electrodes. Due to the changes in the discharge firing characteristics of the open dielectric structure between the two sustain electrodes, the conventional reset waveform including the address waveform needs to be modified. The modified driving waveform suitable for the open dielectric structure is proposed and examined in AC PDP.

플라즈마 디스플레이의 개방형 유전체 구조에서 기입방전특성을 향상시키기 위한 Vt 폐곡선 분석 (Vt Close Curve Analysis for Improving Address Discharge Characteristics in Open Dielectric Structure of AC PDP)

  • 조병권
    • 전자공학회논문지
    • /
    • 제51권1호
    • /
    • pp.179-184
    • /
    • 2014
  • 교류형 플라즈마 디스플레이에서의 Vt 폐곡선 측정에 기초하여 개방형 유전체 구조에서 방전 전압과 내부 벽전압 등의 방전 특성이 종래의 구조와 비교되어 조사되었다. 일반적인 교류형 플라즈마 디스플레이의 구조에서 상판은 유리, 전극, 유전체 등으로 이루어져 있는데, 개방형 유전체 구조는 상판 전극사이에 있는 유전체를 제거하여 상판에 있는 유지 전극간의 방전이 더욱 쉽게 발생하도록 하는 구조이다. 개방형 유전체 구조는 종래의 구조와 다르기 때문에 종래의 구동파형으로 구동시에 여러 가지 문제가 발생한다. 특히 상판의 두 전극인 주사와 유지전극 간 방전 개시전압이 달라지기 때문에 종래의 기입 파형을 포함한 초기화 파형도 수정되어야 한다. 본 연구에서는 종래와 개방형 유전체 구조에서 3 전극의 방전개시전압을 비교하기 위하여 Vt 폐곡선을 측정하였고 분석에 기초하여 개방형 유전체 구조에 적합하도록 구동파형이 수정되었다.

The Performance of AC PDP with Grooved Dielectric Structure in High Xe Contents

  • Kim, Tae-Jun;Bae, Hyun-Sook;Jeong, Dong-Cheol;Whang, Ki-Woong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2003년도 International Meeting on Information Display
    • /
    • pp.88-90
    • /
    • 2003
  • We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.

  • PDF

탄소나노튜브와 ZnS:Cu,Cl 형광체 무기 EL

  • 김진영;정동근;유세기
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
    • /
    • pp.68-68
    • /
    • 2010
  • Electroluminescence (EL) characteristics of green-emission ZnS:Cu,Cl-based ac-type inorganic powder electroluminescent structures were examined by inserting carbon nanotubes (CNTs) into or next to the dielectric layer. For the top-emission type EL structure, where the luminescent light was emitted from the top of the structure, was fabricated by assembling in order, a top electrode, an emitting layer, a dielectric layer, and a bottom electrode from the top. $BaTiO_3$ powder mixed with CNTs was used as a dielectric layer or CNTs were deposited between the bottom electrode and $BaTiO_3$ dielectric layer in order to improve the role of the dielectric layer in the structure. Luminance of an EL structure with CNTs inclusion was greatly enhanced possibly due to the high dielectric constant in the dielectric layer of $BaTiO_3$/CNTs, which is one of hot research topics utilizing nano-objects for intensifying dielectric constant and reducing dielectric loss at the same time. A variation on the CNTs themselves and their inclusion methods in the dielectric layer has been exhorted, and the underlying mechanism for the role of CNTs in the EL structure will be explained in the poster. In order to extend the flexibility of EL devices, EL devices were fabricated on the paper substrate and their performance was compared other EL devices on the plastic-based substrate.

  • PDF

PCW-PNN-PZT계 세라믹의 유전 특성에 관한 연구 (A Study on Dielectric Properties of PCW-PNN-PZT ceramics)

  • 신혜경;이성호;정보람;배선기
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
    • /
    • pp.51-53
    • /
    • 2005
  • This study was to measure the minuteness structure, dielectric properties of 0.03PCW-0.07PNN-0.9PZT ceramics according to sintering temperature manufacture the specimens with a general method. The results of this study were gotten such as follows. The crystal structure of ceramic changed the rombohedral structure into teteragonal structure according to rising sintering temperature in XRD. Dielectric constant at $20^{\circ}C$ showed its maximum value 510.599 in specimens sintered at $1100^{\circ}C$ and dielectric loss showed its minimum value 7.43% in specimens sintered at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of frequency showed its minimum value 0.029/kHz at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of temperature showed its minimum value $1.40/^{\circ}C$ at $1500^{\circ}C$.

  • PDF

Ni, Mn가 첨가된 PMN-PSS-PZT 세라믹스의 유전 특성에 관한 연구 (A Study on Dielectric Properties of PMN-PSS-PZI ceramics with Ni, Mn)

  • 신혜경;김현철;성낙진;배선기
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
    • /
    • pp.764-767
    • /
    • 2004
  • This study was to measure the minuteness structure, dielectric properties of (0.3-x)PMN - XPSS-0.7PZT+0.5wt%NiO+0.5wt%$MnO_2$(x=0.05, 0.10, 0.15, 0.20, 0.25)ceramics according to sintering temperature and PSS moi percentage after manufacturing the specimens with a general method. the results of this study were gotten such as follows. The crystal structure of ceramic has the rombohedral structure in XRD. it appeared that addition of Ni, Mn additive was helpful to the formation of stable structure. Dielectric constant at $20^{\circ}C$ showed its maximum value 890.001 in specimens sintered at $1000^{\circ}C$, x=0.15mol. and dielectric loss showed its minimum value 6.95[%] in specimens sintered at $1000^{\circ}$, x=0.05mol. The variation rate of dielectric constant according to the change of frequency was decreased by increasing frequency, The variation rate of dielectric constant according to the change of temperature was increased by increasing temperature.

  • PDF

전기 기기용 봉지 및 함침 에폭시 복합 재료의 내열성 및 절연파괴 특성 개선에 관한 연구 (A study on the improvement of thermostability and dielectric breakdown strength for packaging and impregnating epoxy composite materials for electrical machines and apparatus)

  • 김명호;김재환
    • E2M - 전기 전자와 첨단 소재
    • /
    • 제7권6호
    • /
    • pp.527-533
    • /
    • 1994
  • In this study, it was studied on dielectric breakdown strength and thennostability properties due to the structure variation of matrix resin and treatment of coupling agent of epoxy insulating materials. The interpenetrating network structure was formed by simultaneous heating curing the epoxy resin with single network structure and the methacrylic acid resin. Also inner structure was observed and the glass transition temperature was measured on these three type specimens. Dielectric breakdown properties were investigated by applying DC, AC and impulse voltage. As a result, the glass transition temperature and the dielectric breakdown strength of specimen with interpenetrating network structure was more higher than another two type specimens.

  • PDF

$(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$의 온도변화에 따른 유전특성과 구조 상전이의 관계 (The relation of dielectric properties and structure change with temperature for $(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$)

  • 정훈택
    • 한국결정성장학회지
    • /
    • 제5권4호
    • /
    • pp.394-399
    • /
    • 1995
  • 산소 팔면체의 tilting에 의한 초격자 구조를 하고 있는 $(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$의 온도 변화에 다른 유전 특성 및 X-선 회절에 의한 구조의 변화를 살펴보았다. 유전 손실 측정에서 관측되는 380 K 부근의 peak는 primitive cell이 정방정에서 입방정으로 변화함에 따라 생기는 peak임을 알 수 있었으며 이 때 유전율의 변화는 관측되지 않았다. 따라서 유전 손실이 재료 내의 구조적 변화를 인지하는데 유전율보다 민감하다는 것을 알 수 있었다. Primitive cell 이 입방정으로 변화한 후에도 산소 팔면체의 tilting에 의한 초격자 회절선은 여전히 관측되었으며 500 K 정도에서 완전히 사라짐을 알 수 있었다. 하지만 이때 유전 특성의 변화는 관측되지 않았다.

  • PDF

구축함에 탑재되는 통합마스트의 RCS 저감 구조 설계 (Design of RCS Reduction Structure of Integrated Mast on the Destroyer)

  • 이종학;라영은;이건민;장주수
    • 전기전자학회논문지
    • /
    • 제24권1호
    • /
    • pp.238-242
    • /
    • 2020
  • 본 논문에서는 구축함에 탑재되는 통합 마스트의 RCS(Radar Cross Section) 값을 저감시키기 위해 다층 구조로 되어있는 유전체 코팅을 이용한 기법을 제시한다. 제시된 다층 구조는 특별히 고유전율을 요구하거나 전자기파 흡수 차단에 많이 사용되는 자성체성분을 포함하지 않은 일반적인 유전체를 사용할 수 있도록 유전율의 범위를 정했기 때문에 제작에 용이하다는 장점이 있다. 제시된 다층 유전체 구조를 통합 바스트 형상에 적용시킨 후 시뮬레이션을 진행한 결과 다층 구조가 없는 구조물과 비교하여 6GHz에서 10.9dB, 12GHz에서 11.95dB, 18GHz에서 11.63dB의 RCS 저감 성능이 있는 것을 확인하였다.

일체형 유전체 대역 통과 필터의 공진기 결합용 인버터 해석 (Analysis of inverters for coupling resonators of monoblock dielectric band-pass filter)

  • 강종윤;최지원;심성훈;윤석진;김현재;박창엽
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 1999년도 추계학술대회 논문집
    • /
    • pp.191-194
    • /
    • 1999
  • Recently, with the rapid development and demand for compactness of portable communications, the requirement for compact and low-cost filter is increasing. One of the methods for reducing size and cost is to use high dielectric constant and low loss dielectric material in filter. The other is new monoblock dielectric band-pass filter (BPF) which has holes in a single dielectric body without additional coupling elements. This structure effectively reduces the size and cost of the filters. For previous conventional coaxial type dielectric BPF, dielectric substrates were used for coupling between adjacent resonators and additional input and output ports were needed. Coupling between adjacent resonators of monoblock BPF can be otained via electrode pairs. Capacitances of electrode pair structure for coupling are intensively investigated by 3-D FEM. The BPF for PCS has been designed to have a 30 MHz pass-bandwidth with center frequency of 1855 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.

  • PDF