• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제25권11호
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• pp.906-909
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• 2012

The address discharge characteristics of a open dielectric structure compared with the conventional panel structure are investigated by measuring the discharge firing voltage. The open dielectric structure could easily produce the discharge between the scan and the sustain electrodes by erasing the dielectric layer between two electrodes. Due to the changes in the discharge firing characteristics of the open dielectric structure between the two sustain electrodes, the conventional reset waveform including the address waveform needs to be modified. The modified driving waveform suitable for the open dielectric structure is proposed and examined in AC PDP.

• Journal of the Institute of Electronics and Information Engineers
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• 제51권1호
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• pp.179-184
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• 2014

The discharge characteristics of an open dielectric structure were investigated, especially such as a firing voltage and related wall voltage, compared with conventional panel structure based on the Vt close curve measurement in AC plasma display panel. While the front panel of the conventional structure in AC plasma display panel was composed of the glass, electrodes, and dielectric, the open dielectric structure could easily produce the discharge between the scan and the sustain electrodes by erasing the dielectric layer between two electrodes. As the open dielectric structure differ from the conventional structure, various problems were produced when driving with the conventional driving waveform. Especially, due to the changes in the discharge firing characteristics of the open dielectric structure between the scan and the sustain electrodes on the front panel, the conventional reset waveform including the address waveform needed to be modified. In this study, the Vt close curves were measured to compare the discharge firing voltages on three electrodes in the conventional and open dielectric structure and based on the Vt close curve analysis, the modified driving waveform suitable for the open dielectric structure was proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.88-90
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• 2003

We reported an AC PDP structure with grooved front panel dielectric layer. The structure exhibits low breakdown voltage, better luminance, and better endurance to crosstalk in high Xe contents. It also shows less luminous efficacy then conventional structure because of the thinner dielectric layer, but we can apply the higher Xe contents to the grooved dielectric structure, which results in the higher luminous efficacy. We made experiments with the Xe contents from 4 to16% and total gas pressure from 400 to 600Torr. The grooved dielectric structure shows the improvement of 20% luminous efficacy and 17% luminance. The firing voltages lower about 40V at 600Torr and Xe 12, 16%. The discharge characteristics of grooved dielectric structure are verified also with 2D simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.68-68
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• 2010

Electroluminescence (EL) characteristics of green-emission ZnS:Cu,Cl-based ac-type inorganic powder electroluminescent structures were examined by inserting carbon nanotubes (CNTs) into or next to the dielectric layer. For the top-emission type EL structure, where the luminescent light was emitted from the top of the structure, was fabricated by assembling in order, a top electrode, an emitting layer, a dielectric layer, and a bottom electrode from the top. $BaTiO_3$ powder mixed with CNTs was used as a dielectric layer or CNTs were deposited between the bottom electrode and $BaTiO_3$ dielectric layer in order to improve the role of the dielectric layer in the structure. Luminance of an EL structure with CNTs inclusion was greatly enhanced possibly due to the high dielectric constant in the dielectric layer of $BaTiO_3$/CNTs, which is one of hot research topics utilizing nano-objects for intensifying dielectric constant and reducing dielectric loss at the same time. A variation on the CNTs themselves and their inclusion methods in the dielectric layer has been exhorted, and the underlying mechanism for the role of CNTs in the EL structure will be explained in the poster. In order to extend the flexibility of EL devices, EL devices were fabricated on the paper substrate and their performance was compared other EL devices on the plastic-based substrate.

• Proceedings of the KIEE Conference
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.51-53
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• 2005

This study was to measure the minuteness structure, dielectric properties of 0.03PCW-0.07PNN-0.9PZT ceramics according to sintering temperature manufacture the specimens with a general method. The results of this study were gotten such as follows. The crystal structure of ceramic changed the rombohedral structure into teteragonal structure according to rising sintering temperature in XRD. Dielectric constant at $20^{\circ}C$ showed its maximum value 510.599 in specimens sintered at $1100^{\circ}C$ and dielectric loss showed its minimum value 7.43% in specimens sintered at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of frequency showed its minimum value 0.029/kHz at $1100^{\circ}C$. The variation rate of dielectric constant according to the change of temperature showed its minimum value $1.40/^{\circ}C$ at $1500^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.764-767
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• 2004

This study was to measure the minuteness structure, dielectric properties of (0.3-x)PMN - XPSS-0.7PZT+0.5wt%NiO+0.5wt%$MnO_2$(x=0.05, 0.10, 0.15, 0.20, 0.25)ceramics according to sintering temperature and PSS moi percentage after manufacturing the specimens with a general method. the results of this study were gotten such as follows. The crystal structure of ceramic has the rombohedral structure in XRD. it appeared that addition of Ni, Mn additive was helpful to the formation of stable structure. Dielectric constant at $20^{\circ}C$ showed its maximum value 890.001 in specimens sintered at $1000^{\circ}C$, x=0.15mol. and dielectric loss showed its minimum value 6.95[%] in specimens sintered at $1000^{\circ}$, x=0.05mol. The variation rate of dielectric constant according to the change of frequency was decreased by increasing frequency, The variation rate of dielectric constant according to the change of temperature was increased by increasing temperature.

• Electrical & Electronic Materials
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• 제7권6호
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• pp.527-533
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• 1994

In this study, it was studied on dielectric breakdown strength and thennostability properties due to the structure variation of matrix resin and treatment of coupling agent of epoxy insulating materials. The interpenetrating network structure was formed by simultaneous heating curing the epoxy resin with single network structure and the methacrylic acid resin. Also inner structure was observed and the glass transition temperature was measured on these three type specimens. Dielectric breakdown properties were investigated by applying DC, AC and impulse voltage. As a result, the glass transition temperature and the dielectric breakdown strength of specimen with interpenetrating network structure was more higher than another two type specimens.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제5권4호
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• pp.394-399
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• 1995

Dielectric properties and crystal structure changes with temperature were observed on $(Na_{0.5}Sr_{0.5})(Ti_{0.5}Nb_{0.5})O_{3}$ which had a superstructure due to oxygen octahedron tilting. Dielectric loss peak observed at 380 K was found to have a relation with a primitive cell change from tetragonal to cubic, however, in this case, dielectric constant variation was not observed. Therefore it was found that the dielectric loss was more senstive than the dielectric constant for detecting the structure change. After the structure change of primitive cell from tetragonal to cubic, X-ray diffraction peaks of superstructure, which completely disappear above 500 K, were still observed. And no dielectric property variations were found with the disappearence of superstucture.

• Journal of IKEEE
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• 제24권1호
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• pp.238-242
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• 2020

This paper presents a technique using a multilayered dielectric coating to reduce the radar cross section (RCS) value of an integrated mast mounted in a destroyer. The proposed multilayer structure has the advantage of being easy to fabricate because the dielectric constant is defined so that a general dielectric that does not contain a magnetic component that requires high dielectric constant or is frequently used for blocking electromagnetic wave absorption can be used. After applying the proposed multi-layer dielectric structure to the integrated mast shape, the simulation results show that the RCS reduction performance is 10.9dB at 6GHz, 11.95dB at 12GHz, and 11.63dB at 18GHz compared to the structure without the multilayer structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.191-194
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• 1999

Recently, with the rapid development and demand for compactness of portable communications, the requirement for compact and low-cost filter is increasing. One of the methods for reducing size and cost is to use high dielectric constant and low loss dielectric material in filter. The other is new monoblock dielectric band-pass filter (BPF) which has holes in a single dielectric body without additional coupling elements. This structure effectively reduces the size and cost of the filters. For previous conventional coaxial type dielectric BPF, dielectric substrates were used for coupling between adjacent resonators and additional input and output ports were needed. Coupling between adjacent resonators of monoblock BPF can be otained via electrode pairs. Capacitances of electrode pair structure for coupling are intensively investigated by 3-D FEM. The BPF for PCS has been designed to have a 30 MHz pass-bandwidth with center frequency of 1855 MHz and an attenuation pole at below the passband using a commercial 3-D structure simulator.