• 조명전기설비학회논문지
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• 제29권8호
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• pp.49-54
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• 2015

Molded Circucit Breaker(MCCB) is a most widely used device to protect loads from the over-current in low power level distribution system. When the MCCB interrupts the over-current, the arc discharge occurred between fixed contact and moving contact to create hot gas. By the Lorentz force due to arc current, the occurred arc is bent to the grids. The grids extend and cool and divide it for arc extinguish. In the majority cases, the MCCB protects loads by interrupting the over-current successfully but in some cases the re-ignition is occurred by hot-gas created during process of interruption. The re-ignition arises when the recovery voltage(RV) is more higher than the recovery strength between contacts and it leads to interruption fault. Therefore to find out the dielectric recovery characteristics of protecting device has a great importance for preventing interruption fault. In this paper, we studies measurement method of the dielectric recovery characteristics considering inherent attribute of the MCCB. To measure the dielectric recovery characteristic of MCCB, we makes an experiment circuit for applying the over-current and the randomly recovery voltage. The measurement methode to find out the dielectric recovery voltage of the MCCB was established and the result was based on experiment results.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제54권11호
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• pp.519-526
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• 2005

This paper presents computer simulation results for developing new type of SF$_{6}$ Circuit Breaker in terms of cold gas flow after small current interruption. This cold gas flows down a nozzle into the chamber of a circuit breaker. There are many difficult problems in analyzing the gas flow due to complex geometry, moving boundary, shock wave and so on. When predicting the dielectric capability of a gas circuit breaker after interruption, the gas pressure and density distributions due to the cold gas must be considered in addition to the electrical field imposed across the gas. A self-coded computational fluid dynamics (CFD) program is used for the simulation of cold gas flow in order to evaluate the electrical field characteristic across open contacts and transient characteristics of insulations after small current interruption.

• 한국전기전자재료학회논문지
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• 제24권3호
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.