• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.565-570
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• 2016

In this work, the complex permittivity of epoxy resins is measured. Epoxy resins, epoxy with micro size fillers and epoxy with micro+nano alumina composites have been evaluated for dielectric properties according to frequency variation. The dielectric spectroscopy measurement and analyses are carried out in the frequency range of $10^{-2}Hz$ to 1MHz and constant to room temperature. The results of dielectric loss suggest that significant improvement in the electrical performance can be expected by using samples containing nano and micro fillers mixture when compared to materials containing only microfillers. As the result, we verified the specific characteristics of dielectric permittivity and dielectric loss namely, relative permittivity become low with improving dispersibility of nano+micro mixture composites and become rise with agglomerate of nano particles.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1615-1617
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• 1996

In this study, epoxidized bisphenolic resins laminated with glass fiber mat(GFRP) are ivestigated on surface, bulk aspect and dielectric constant(${\varepsilon}'$ and ${\varepsilon}''$) vs. frequency characteristics with temperature. The investigation shows the different characteristics accordig to the attachments of fiber surface, filler content, matrix properties, and the others. Especially, dielectric properties of this sample are highly increased above $100^{\circ}C$ and decreased with the rise of frequency. There is a resonance at the high frequency region ($1MHz{\sim}10MHz$). So, dielectric properties show the shift with frequency and temperature. Dielectric properties of EGL 10 are higher than those of EGL 40 with the frequency. Generally, dielectric properties of EGL 10 are more unstable than those of EGL 40 on the shift of frequency and temperature.

• Bulletin of the Korean Chemical Society
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• v.30 no.6
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• pp.1267-1273
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• 2009

The correlation between the sintering temperature and dielectric properties in the $Nb^{5+}\;and\;Ta^{5+}$ doped BaTi$O_3$ solid solutions have been investigated. The samples were sintered at temperatures ranging from 1250 to 1350 ${^{\circ}C}$ for 4 h in air. SEM, XRD and SEM/EDS techniques were used to examine the structure of the samples with particular focus on the incorporation of $Nb^{5+}\;and\;Ta^{5+}$ ions into the BaTi$O_3$ crystal lattice. The X-ray diffraction peaks of (111), (200) and (002) planes of BaTi$O_3$ solid solution doped with different fractions of $Nb^{5+}\;and\;Ta^{5+}$ were investigated. The dielectric properties were analyzed and the relationship between the properties and structure of doped BaTi$O_3$ was established. The fine-grain and high density of the doped BaTi$O_3$ ceramics resulted in excellent dielectric properties. The dielectric properties of this solid solutions were improved by adding a small amount of dopants. The transition temperature of the 1.0 mole% $Ta^{5+}$ doped BaTi$O_3$ solid solution was $\sim$110 ${^{\circ}C}$ with a dielectric constant of 3000 at room temperature. At temperatures above the Curie temperatures, the dielectric constant followed the Curie-Weiss law.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.743-745
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• 2002

Pyroelectric and dielectric properties of modified PZT thin film and bulk ceramics were studied. In case of bulk specimens were prepared by conventional ceramic process and thin films with same composition and (111) preferred orientation were prepared by the sol-gel process. Their crystal structure, pyroelectric and dielectric properties were investigated after poling at $150^{\circ}C$ for 30 min for bulk ceramics and no poling treatment, respectively. Dielectric constants and losses of bulk and thin film were 600, 875 and 0.028, 0.025, respectively. Pyroelectric coefficients obtained were $50nC/cm^2K$ and $30nC/cm^2K$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.439-442
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• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.33-34
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• 2008

Barium titanate (BaTiO3) is one of the most important dielectric materials for the electronic devices, such as MLCC (Multilayer Ceramic Capacitor). The thickness of the dielectric thin film in MLCC has become thinner and reached about 0.8 ${\mu}m$. Further down sizing is required for the higher performance. For this reason, we should take into account for the size effect of Barium titanate powders. In this study, we demonstrated that size effect for BaTiO3 (0.2 ~ 0.5 ${\mu}m$, hydrothermal BT) could be estimates by using dielectric properties analysis together with the powder properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.6
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• pp.550-553
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.613-619
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• 2016

The aim of this study is to improve of dielectric properties using epoxy/nano alumina composites with adding glycerol diglycidyl ether (GDE:1,2 g). This paper deals with the effects of dielectric properties(${\epsilon}^{\prime}_r$ and $tan{\delta}$) for epoxy/nano alumina contents (1,3 phr) and GDE addition (1,2 g)composites. 5 kinds specimen were prepared with containing epoxy resins, epoxy nano alumina composites. Average particle size of nano used were 30 nm. The nano alumina used were gamma phase particles of spherical shape. The suppression of epoxy chain motion by addition of nano alumina+GDE decreased dielectric loss and relative permittivity magnitude.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.397-400
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• 1996

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.155-158
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• 2002

Eu-doped lead zirconium titanate $Pb_{1.1}(Zr_{0.3}Ti_{0.7})O_{3}$ thin films on the Pt/Ti/$SiO_2$/Si substrates prepared by a metalorganic decomposition (MOD) method. The effect on the structural and electrical properties of the films measured according to Eu content. Eu-doping altered significantly the dielectric and ferroelectric properties. The remanent polarization and coercive field decreased with increasing the concentration of Eu content. The dielectric constant and dielectric loss of the film decreased with increasing Eu contents. The 3 mol% of Eu-doped PZT thin film showed large remanent polarization and the fatigue characteristic of the film did not change up to $10^9$ switching cycles.