• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.772-775
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• 2003

The development of new improved type of dielectric materials on the conception of multiphase structure has been carried out in this paper. Metal alkoxides solutions were used for application of thin film by electrophoretic deposition technique. We succeeded in preparation of amorphous and composite dielectric films from Al alkoxides. Specific features of the preparation technique were considered. Microstructure of the films was examined as well as their dielectric properties. TEM analyses reveals that films deposited from aging sols and heat-treated at temperatures as low as $400^{\circ}C$ contain small whiskers of ${\delta}-Al_2O_3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.896-900
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• 2008

A measurement method of the dielectric constant of materials whose standard sample is not prepared easily is proposed. The unprepared sample of the material is placed in a cavity, and the resonant frequency is measured. A commercial software simulates the same sample and the cavity leading to find the correct dielectric constant. The measured samples include a ceramic, a forced glass, and a powdered enamel. The measured dielectric constant of a ceramic, a forced glass, and a powdered enamel are 11-j0.0033(${\epsilon}_{\gamma}=11,\;tan{\delta}=0.0003$), 4.15-j0.053(${\epsilon}_{\gamma}=4.15,\;tan{\delta}=0.0128$), and 3.9-j0.042(${\epsilon}_{\gamma}=3.9,\;tan{\delta}=0.0108$) respectively.

• Journal of Information Display
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• v.11 no.3
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• pp.95-99
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• 2010

A series of new dielectric polymers with phenyl, epoxy, and carboxylicacid functional groups was prepared via free-radical polymerization. The effect of such dielectric polymers with various functional groups on the performance of OTFT was investigated. The nonpolar groups of terpolymer made the surface of the dielectric layer more hydrophobic and improved the crystal growth of pentacene on the gate insulator, resulting in higher mobility. By controlling the functional group, the electric characteristics of OTFT performance was varied, with $0.00017-0.15\;cm^2/V{\cdot}s$ mobility.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.773-777
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• 1998

This paper presents the results of measured permittivity of PCB sheet material in the frequency range of 0.1 ~ 2[㎓] and temperature range of 25~ 85[>$^{\circ}C$]. Microstrip lines with different physical length are implemented to measure the attenuation and phase shift of the signals through these lines. The loss factor of glass-epoxy and teflon could by calculated with the measured dielectric constant and the attenuation. From the experiment, the glass-epoxy was more influenced by temperature and frequency than teflon. The average dielectric constants of glass-epoxy and teflon within the measured frequency range are 4.48 and 2.18, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.224-225
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• 2007

The Low dielectric properties of epoxy/Annealing $SiO_2$ composites using Annealing new material of nanosized amorphous particles were investigated as function frequency, temperature and filler contents composition. The dielectric constant decrease with increasing frequency and also increase with increasing ambient temperature. The dielectric constant decrease with increase annealing filler contents for epoxy base. The result of x-ray diffraction could obtained single crystal of annealing $SiO_2$ from 500nm amorphous $SiO_2$ powder.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.946-948
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• 2006

It is important to keep a constant transmittance of dielectric during firing. To control the shrinkage and fusion stage of frits in firing, we used a hot stage microscope (HSM) to analyze the thermal properties of the lead and bismate glass frits by the in-situ method. This research would be useful for improving the reliability of transmittance of dielectric during firing in industry using a large furnace with temperature deviation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.114-118
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• 2005

In this study, the DC dielectric breakdown of epoxy composites used for molding material was experimented and then its data were simulated by Weibull distribution equation. From the analysis of Weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1[%], the applied field value needed to be under 21.5[kV/mm].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.941-946
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• 2001

The fundamental study on HTV silicone for insulation material has been performed. In order to estimate the chemical behavior of siloxane under high voltage, H-NMR, GPC and vinyl contents measurement were used. As an experimental results, after high voltage stress, the molecular weight of siloxane are increased, the vinyl contents of siloxane are decreased. The dielectric strength of vinyl group containing siloxane was lower than only methyl containing siloxane.

• Journal of the Korea Institute of Military Science and Technology
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• v.25 no.6
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• pp.580-585
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• 2022

In this study, the high-temperature dielectric constant of Si₃N₄ ceramics, a representative non-oxide-based radome material, was evaluated and the cause of the dielectric constant change was analyzed in relation to the oxidation behavior. The dielectric constant of Si₃N₄ ceramics was 7.79 at room temperature, and it linearly increased as the temperature increased, showing 8.42 at 1,000 ℃. As results of analyzing the microstructure and phase for the Si₃N₄ ceramics before and after heat-treatment, it was confirmed that oxidation did not occur at all or occurred only on the surface at a very insignificant level below 1,000 ℃. Based on this, it is concluded that the increase in the dielectric constant according to the temperature increase of Si₃N₄ ceramics is irrelevant to the oxidation behavior and is only due to the activation of charge polarization.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.625-628
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• 1998

This paper presents the design method of a temperature stable stepped-impedance resonator using composite material. In this method temperature coefficient of dielectric constant $(\tau\varepsilon)$ and thermal expansion coefficient $(\alpha1)$ of dielectric material were considered. Ba(Zn1/3Nb2/3)O3 and CaZrO3 as composite material having opposite signs of temperature coefficient of dielectric constant were selected. The length of this resonator for the temperature stability of resonance frequency was calculated at 900MHz, 1.4㎓ and 1.9㎓. It was found that the ratio of the length of positive $\tau\varepsilon$ materal to the length of negative $\tau\varepsilon$ material is constant at various resonance frequencies.