• Korean Journal of Food Science and Technology
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• v.18 no.3
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• pp.226-233
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• 1986

Myofibrillar proteins were prepared from red muscle and white muscle, and their thermostabilities were compared. Rate constants of inactivation of myofibrillar proteins were increased as the ionic strength of reaction mixture increased and also dielectric constant of reaction mixture decreased. Thermodynamic data forinactivation of myofibrillar proteins, such as $D-value,\;{\Delta}H^{\ddag},\;{\Delta}G{\ddag}\;and\;{\Delta}S^{\ddag$, revealed that thermostabilities of myofibrillar proteins from white muscle were higher than those from red muscle, and that myofibrillar proteins from chicken muscle were more heatlabile than from bovine muscle.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1777-1779
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• 1999

SMM is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. SNOAM is a new tool for surface imaging which was introduced as one application of AFM. Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. Here we report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• Structural Engineering and Mechanics
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• v.62 no.3
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• pp.325-344
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• 2017

The present paper investigates the propagation of Love-type wave in a composite structure comprised of imperfectly bonded piezoelectric layer with lower fiber-reinforced half-space with rectangular shaped irregularity at the common interface. Closed-form expression of phase velocity of Love-type wave propagating in the composite structure has been deduced analytically for electrically open and short conditions. Some special cases of the problem have also been studied. It has been found that the obtained results are in well-agreement to the Classical Love wave equation. Significant effects of various parameters viz. irregularity parameter, flexibility imperfectness parameter and viscoelastic imperfectness parameter associated with complex common interface, dielectric constant and piezoelectric coefficient on phase velocity of Love-type wave has been reported. Numerical computations and graphical illustrations have been carried out to demonstrate the deduced results for various cases. Moreover, comparative study has been performed to unravel the effects of the presence of reinforcement and piezoelectricity in the composite structure and also to analyze the existence of irregularity and imperfectness at the common interface of composite structure in context of the present problem which serves as a salient feature of the present study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.327-330
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• 2000

The scanning Maxwell-stress microscopy (SMM) is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. The Scanning near-field optical / atomic force microscopy (SNOAM) is a new tool for surface imaging which was introduced as one application of the atomic force microscope (AFM). Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. We report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• ETRI Journal
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• v.28 no.1
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• pp.9-16
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• 2006

In this paper, we analyzed and measured the electrical crosstalk characteristics of a 1.25 Gbps triplexer module for Ethernet passive optical networks to realize fiber-tothe-home services. Electrical crosstalk characteristic of the 1.25 Gbps optical triplexer module on a resistive silicon substrate should be more serious than on a dielectric substrate. Consequently, using the finite element method, we analyze the electrical crosstalk phenomena and propose a silicon substrate structure with a dummy ground line that is the simplest low-crosstalk layout configuration in the 1.25 Gbps optical triplexer module. The triplexer module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and an analog photodetector as a cable television signal receiver. According to IEEE 802.3ah and ITU-T G.983.3, the digital receiver and analog receiver sensitivities have to meet -24 dBm at $BER=10^{-12}$ and -7.7 dBm at 44 dB SNR. The electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the dummy line with $100\;{\mu}m$ space from the signal lines and 4 mm separations among the devices satisfies the electrical crosstalk level compared to a simple structure. This proposed structure can be easily implemented with design convenience and greatly reduce the silicon substrate size by about 50 %.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.226-229
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• 2003

Following the successful development of practical high temperature superconducting (HTS) wires, there has been renewed activity in the development of superconducting power equipments. HTS equipments must be operated in the coolant, such as liquid nitrogen (L$N_2$) or cooled by cooler, such as GM-cryocooler to maintain the temperature below critical temperature. In this paper, dielectric strength of some insulating materials, such as epoxy, teflon, and glass fiber reinforced plastic (GFRP) in L$N_2$was measured. Surface breakdown voltage of GFRP which is basic property in design of HTS solenoid coil was measured. Epoxy is a goof insulating material but it is fragile at cryogenic temperature. The multi-layer insulating method of current lead is suggested to compensate this fragile property. It consists of teflon tape layer and epoxy layer fixed with texture. Based on these measurements, the 6.6㎸ class HTS magnet for DC reactor type high-T$_{c}$ superconducting fault current limiter (SFCL) was successfully fabricated and tested.d.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.263-264
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• 2006

For practical electrical insulation design of high temperature superconducting (HTS) power apparatuses, knowledge of the dielectric behavior of insulators in cryogenic liquid such as liquid nitrogen ($LN_2$) is essential. So in this paper, we discussed experimental investigations of breakdown and V-t characteristics of several insulators such as Kapton and glass fiber reinforced plastic (GFRP) that are candidates of insulator for HTS apparatus in cryogenic liquid. And we investigated the degradation of these insulation samples after breakdown with the microscope and SEM photograph. Moreover, survival and hazard analysis were performed.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.1-7
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• 1996

Optical intensity-type pressure sensor was fabricated by coupling optical fiber with a micromachined thin dielectric diaphragm, which consists of a 300 nm thick $SiO_{2}$ layer sandwiched between 150 nm thick top and bottom $Si_{3}N_{4}$ layers. At the wavelength of the sensor light source near $1.3\;{\mu}m$, the optical transmittance of the diaphragm was about 50 %, but it was decreased to a few percents by depositing $1,000\;{\AA}$ thick gold(Au) layer on the diaphragm, which is sufficient enough to be used as a light reflection layer of the sensor. From the optical output power-pressure characteristics of the sensors, it was found that the output power linearly decreased with increasing applied pressure from 0 to 77 torr regardless of the diaphragm size. The respective sensitivities were 0.52, 0.65, and 0.77 nW/torr for the diaphragm sizes of $3{\times}3$, $4{\times}4$, and $5{\times}5\;mm^{2}$, indicating that the sensitivity increases as diaphragm size decreases.

• Applied Chemistry for Engineering
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• v.22 no.5
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• pp.551-554
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• 2011

One of the key issues in the research of organic field-effect transistors (OFETs) is the low-voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross-linking. The pentacene FETs based on the 34 nm-thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of $0.25cm^2/Vs$, a threshold voltage of -2 V, an sub-threshold slope of 400 mV/decade, and an on/off current ratio of ${\sim}10^5$. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.