• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.168-168
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• 2006

Low-operating voltage organic field-effect transistors (OFETs) have been realized with high dielectric constant (${\kappa}$) polymer such as cyanoethylated poly vinyl alcohol (CR-V, ${\kappa}=12$). Since the $high-{\kappa}$polymers are likely to contain water and ionic impurities, large hysteresis and considerable leakage current are frequently observed in OFETs. To solve these problems, we cross-linked the CR-V by using a cross-linking agent. Cross-linked CR-V dielectrics showed high dielectric constant of 11.1 and good insulating properties, resulting in a high capacitance ($81nF/cm^{2}$ at 1MHz) at 120 nm of dielectric thickness. Pentacene FETs with cross-linked CR-V dielectrics exhibited high carrier mobility ($0.72\;cm^{2}/Vs$), small subthreshold swing (185 mV/dec) and little hysteresis at low-operating voltage (${\Leq}-3V$).

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.185-187
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• 1993

0.15BaO-$0.15Sm_2O_3-0.7TiO_2$, ceramics were fabricated by mixed-oxide method. Microwave dielectric properties were investigated with sintering temperature and annealing time. In the specimen sintered at 1350[$^{\circ}C$], dielectric constant, quality factor and temperature coefficient of resonant frequency had a good values of 80.19, 2006 (at 4.6851[GHz]), -27.54[ppm/$^{\circ}C$], respectively. Increasing the annealing time, dielectric constant was almost constant and quality factor was increased. Temperature coefficient of resonant frequency was minimum value (-1.28[ppm/$^{\circ}C$]) at 4 [hr] annealed.

• 전기의세계
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• v.18 no.2
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• pp.15-20
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• 1969

The main focus of this paper is on the study of the .gamma. ray irradiation effect upon the electrical properties of a B-kind insulator which is one of the inorganic insulators. The mica is so typical of the B kind insulators as to be selected for a sample. DC, AC, and Impulse voltage is applied to the variable .gamma. ray irradiated dose samples with the constant time duration and the time variable samples with the .gamma. ray irradiated dose. The dielectric breakdown voltage and dielectric constant are measured from the samples and we get the experimental data that the dielectric breakown voltage variations are relatively large, but the dielectric constants are almost constant. The above conclusion is useful for the selection and application of the inorganic insulators under the irradiation effects, and we expect that the conclusion can apply to not only B-kind insulators but also the inorganic insulators.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.254-255
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• 2008

In this study, electrical properties of polyethylene of raised temperature resistance (PE-RT) have been studied through an examination of AC conductivity, dielectric constant, and space charge distributions. A dielectric constant was investigated by Dielectric Analyzer (DEA). Measurements of space charge distributions for PE-RT were carried out using Pulsed Electroacoustic (PEA) techniques, and it was possible to observe the negative charge near the cathode overlapped with the positive induced charge peak, the polarity of which remains unchanged after a short circuit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.331-334
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• 1998

The solid solutions of the Pb(Sc$\_$0.5/Nb$\_$0.5/)$\_$0.57/Ti$\_$0.43/O$_3$ system were prepared. In the PSNT system, it had been known that two-phase region between the rhombohedral and tetragonal phases was observed between 0.425 of PT at room temperature. In this paper, Fe$_2$O$_3$-doped 0.57PSN-0.43PT composition was prepared by conventional method. The dielectric and strain properties were examined using an computerized measuring apparatus, and the resonance characteristics were measured using an impedance gain phase analyzer. We got the data of dielectric constant, dielectric loss, piezoelectric coefficient, piezoelectric voltage coefficient, frequency constant strain constant mechanical quality factor and electromechanical coupling factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.625-629
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• 1999

In this study, in order to develop high sensitivity and low noise acoustic emission sensor, we manufactured the Pb(Zr, Ti)O$_3$ ceramics with the addition of WO$_3$ wt% to search for its required characteristics. Dielectric constant was increased as a function of the increase of WO$_3$ wt%. The Pb(Zr, Ti)O$_3$ (EC-65) ceramics added with 0.1lwt% WO$_3$ showed excellent dielectric constant and piezoelectric constants of 1931 and 199.55$\times$10$^{-12}$ (C/N), respectively. Accordingly It was shown as the composition ceramics suitable for AE sensor.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.208-213
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• 2008

In this study, helical antenna with microwave ZST ceramics was designed using finite element method and developed. Studied parameters are relative dielectric constant of the dielectric core and the width of the conduction metal band of the antenna. As shown in the results, the center frequency of the antenna was decreased as the dielectric constant increased. Also beam width of the antenna increased as both the dielectric constant and the conduction band width increased. Based on the designed optimal shape, the manufactured antenna has the good beam width at center frequency 1.58 GHz.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.461-461
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• 2010

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.439-444
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• 1996

0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.642-645
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• 2002

Microwave dielectric properties of $ZnWO_4$ ceramic were investigated with calcination and sintering temperatures. The dielectric properties required for such application are high dielectric constant$(\varepsilon_r)$, high $Q{\times}f_o$ value and low temperature coefficient of resonant frequency$(\tau_f)$. These requirement correspond to necessities for size reduction, excellent frequency selectivity, good temperature stability of devices. $ZnWO_4$ ceramics could be sintered at low $1075^{\circ}C$, which was comparatively low temperature for microwave dielectrics. As a result, $ZnWO_4$ showed the dielectric constant of 13, quality factor($Q{\times}f_o$ value) of 22000 and 'temperature coefficient of resonant frequency$(\tau_f)$ of $-65{\pm}5ppm/^{\circ}C$.