• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.960-966
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• 2004

On the bases of the results from "Additive Coating of BaTiO$_3$ Powder using Sol Coating Method I", experimental condition was defined. Representative additives for BaTiO$_3$, that is to say, Mg, Ca and Mn were experimented. The sources of the metal ion were used by organometal complex. As added it, the stability of BaTiO$_3$ sol was evaluated. Mg and Ca were stable, however, The solubility limit of Mn-ATH was 0.05 mol ratio in Mn-ATH/sol. The solubility limit of Mg ion in BaTiO$_3$ was lower than 2 mol%. From the x Ray diffraction patterns, lattice parameters were different with temperature and additives, because the solubility of metal ion was varied in BaTiO$_3$. The dielectric constant of BaTiO$_3$ powders which coated with the 1.5 mol% Mg and calcined at 1200$^{\circ}C$ was increased with 20%.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.312.2-312.2
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• 2016

본 연구에서는 $HfO_2$와 $ZrO_2$의 구조적 차이를 통한 Dielectric layer의 특성 변화에 대한 분석을 진행하였다. $HfO_2$와 $ZrO_2$ layer는 용액 공정을 통해 만들고, 용액의 농도는 0.2 M로 제작하여 Spin Coating으로 소자를 제작하였다. 각 소자들의 구조적인 차이를 위해 $HfO_2$/$HfO_2$, $ZrO_2$/$HfO_2$, $HfO_2$/$ZrO_2$, $ZrO_2$/$ZrO_2$ 층 순서로 제작되었다. 각 소자들의 Capacitance 값은 245.72, 259.81, 294.23, $312.12nF/cm^2$으로 측정 되었고, Leakage current 값은 1.01, 1.79, 0.09, $0.0910-1A/cm^2$으로 다소 높은 값으로 확인되었다. 또한 dielectric constant, k 값이 16.6, 17.6, 19.9, 21.2로 각각의 측정값들 모두 substrate쪽의 dielectric layer에 따라 비슷한 특성을 갖게 되는 것을 확인했다. 이를 통해 Electrode 쪽의 layer보다 Substrate 쪽의 layer의 영향이 더 큰 것을 알 수 있다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.504-510
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• 2002

Recently, thin film capacitors of high dielectric constant and low leakage current are applied to integrated devices. In this study, (Ba, Sr)$TiO_3$ (BST) thin films for low cost were prepared by Sol-Gel method. BST solution was spin-coated on Pt/$SiO_2$/Si substrate at 4,000 rpm for 10 seconds. Coating process was repeated 3 times and then sintered at $700^{\circ}C$ for 30 minutes. Structural and electrical characteristics of each specimen were analyzed by TG-DTA, SEM, fractal phenomenon, voltage-current and dielectric factor. Thickness of BST ceramics thin films are about 2,600~2,800 ${\AA}$ at depositing 3 times. Dielectric constant of thin films was decreased in 1 kHz~1 MHz. Dielectric constant and loss to frequency were 250 and 0.02 in $(Ba_{0.7}Sr_{0.3})TiO_3$ (BST3). Leakage current of BST3 was $10^{-9}\sim10^{-11}$/ A under 3 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.35-40
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• 2007

The new PEI(poly(epoxy-imide))-nano Silica film has been synthesized via in situ CS sol process, and the chemical bonding and microstructure of nano silica dispersed in resin were examined by FT-IR, TAG and SEM. The dielectric properties of these hybrid films over a given temperature and frequency ranges have been studied in a point of view of stable chemical bonding of nano Silica filler. The results from IR spectra and SEM photograph indicated that PEI-Silica hybrid film prepared with nano CS sol process has been synthesized in uniform and chemical bonding. The decrease property of dielectric constant with CS content, tangent loss consistent of given frequency and temperature has been explained in terms of the chain movement of polymer through chemical bonging and size effect of nano silica. The new PEI-CS sol hybrid film with such stable chemical and dielectric properties was expected to be used as a high functional coating application in ET, IT and electric power products.

• Applied Microscopy
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• v.47 no.1
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• pp.36-42
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• 2017

Field electron emission measurements were performed on dielectric-coated tungsten emitters, with apex radii in the nanometer and micrometer range, which were prepared by electrochemical etching in NaOH solution. Measurements were performed in a field electron microscopy (FEM) with a base pressure <$10^{-6}$ Pascal ($10^{-8}$ mbar). Four different types of dielectric were used, namely: (1) Clark Electromedical Instruments epoxylite resin, (2) Epidian 6 produced by Ciech Sarzyna S. A., (3) a Radionox solution of colloidal graphite; and (4) Molyslip 2001 E compound ($MoS_2$ and MoS). Current-voltage measurements and FEM images were used to investigate the characteristics of these composite emitters, and to assess how the different types of dielectric coating affect the suitability of the composite emitter as a potential electron source.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.895-899
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• 2011

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.335-337
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• 1995

In this study, $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramic thin films were fabricated from an alkoxide-based by Sol-Gel method. $Pb(Zr_{0.52}Ti_{0.48})O_3$ stock solution was made and spin-coated on the $Pt/SiO_2/Si$ substrate at 4000[rpm] for 30[sec]. Coated specimens were dried at 400[$^{\circ}C$] for 10 [min]. The coating process was repeated 4 times and then heat-treated at 500$\sim$800[$^{\circ}C$], 1 hour. The final thickness of the thin films were about 3000[A]. The crystallinity and microstructure of the thin films were investigated for varing the sintering condition. The ferroelectric perovskite' phases precipitated under the sintering of 700[$^{\circ}C$] for 1 hours. In the $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin films sintered at 700[$^{\circ}C$] for 1 hour, dielectric constant and dielectric loss were 2133, 2.2[%] at room temperature, respectively. $Pb(Zr_{0.52}Ti_{0.48})O_3$ thin film capacitors having good dielectric and electrical properties are expected for the application to the dielectric material of DRAM.

• Bulletin of the Korean Chemical Society
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• v.28 no.9
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• pp.1463-1466
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• 2007

Single phases of multi-component oxides films, ZrTiO4 and Ta2Zr6O17, could be synthesized by using the combinatorial approach through surface sol-gel route, coating the appropriate mole ratio of 100 mM zirconium butoxide, tantalum butoxide and titanium butoxide precursors on Pt/Ti/SiO2/Si (100) substrate, following pyrolysis at 450 oC, and annealing them at 770 oC. Both the films and bulks of ZrTiO4 and Ta2Zr6O17 showed very stable dielectric properties in temperature range, ?140 to 60 oC, and frequency range, 100 Hz to 1 MHz, promising their applications in wide range of temperatures and frequencies. The dielectric constants of the films were lower and a little more dependent on frequency than those of the bulks. The reduction of dielectric property in the film was mainly due to the interfacial effects that worked as series and parallel-connected capacitances toward the substantial film capacitance.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.115-116
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• 2006

Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the $Pt/Ti/SiO_2/Si$ substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 kHz were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.

• Journal of Industrial Technology
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• v.30 no.A
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• pp.127-132
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• 2010

We analyzed the effects of several process variables on the $SO_2$ removal and particle growth by the dielectric barrier discharge - photocatalysts hybrid process. In this process, $SO_2$ was converted into the ammonium sulfate ($(NH_4)_2SO_4$) particles. The size and crystallinity of ammonium sulfate particles were examined by using TEM and XRD analysis. The dielectric barrier discharge reactor consisted of two zones: the first is for plasma generation and the second is for ammonium sulfate particles formation and growth. The first zone of reactor was filled with glass beads as a dielectric material. To enhance $SO_2$ removal process, the $TiO_2$ photocatalysts were coated on glass beads by dip-coating method. As the voltage applied to the plasma reactor or the pulse frequency of applied voltage increases, the $SO_2$ removal efficiency increases. Also as the initial concentration of $SO_2$ decreases or as the residence time increases, the $SO_2$ removal efficiency increases. $(NH_4)_2SO_4$ particles continue to grow by particle coagulation and surface reaction, moving inside the reactor. Larger particles in site are produced according to the increase of residence time or $SO_2$ concentrations.