• Journal of Information Display
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• v.11 no.3
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• pp.95-99
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• 2010

A series of new dielectric polymers with phenyl, epoxy, and carboxylicacid functional groups was prepared via free-radical polymerization. The effect of such dielectric polymers with various functional groups on the performance of OTFT was investigated. The nonpolar groups of terpolymer made the surface of the dielectric layer more hydrophobic and improved the crystal growth of pentacene on the gate insulator, resulting in higher mobility. By controlling the functional group, the electric characteristics of OTFT performance was varied, with $0.00017-0.15\;cm^2/V{\cdot}s$ mobility.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.391-396
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• 2011

The tracking pattern formed on the dielectric surface due to a surface electrical discharge exhibits fractal structure. In order to quantitatively investigate the fractal characteristics of the surface tracking pattern, the dielectric breakdown model has been employed to numerically generate the surface tracking pattern. In dielectric breakdown model, the pattern growth is determined stochastically by a probability function depending on the local electric potential difference. For the computation of the electric potential for all points of the lattice, a two-dimensional discrete Laplace equation is solved by mean of the successive over-relaxation method combined to the Gauss-Seidel method. The box counting method has been used to calculate the fractal dimensions of the simulated patterns with various exponent $\eta$ and breakdown voltage $\phi_b$. As a result of the simulation, it is found that the fractal nature of the surface tracking pattern depends strongly on $\eta$ and $\phi_b$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.397-400
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• 1996

We investigated electric and dielectric properties of MIM device using Maleate Copolymer LB films. The thickness of maleate copolymer LB film by ellipsometry measurements and X-ray diffraction pattern was about 27~30[ ]. The maleate copolymer 13 film have the property of insulator like organic ultra-thin film. The electric conduction was Schottky current measured by I-V characteristics, and the conductivity was 10$^{-15}$ ~10$^{-14}$ [S/cm]. Dielectric constant was about 5.0~6.0 by various measurement: I-V, frequency-depenent dielectric properties. Schottky barrier was about 0.9 ~1.0(eV). By relation between log I and 1/T, activation energy baa 0.74(eV). Frequency-depenent dielectric properties wart orientational polarization by the dipole.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1537-1539
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• 1997

In this study, the dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbTiO_3$ Ceramics have been investigated as a addition of the amount of $MnO_2(0{\leq}x{\leq}0.9wt%)$. The Temperature-dependant dielectric characteristics of 0.9PMN-0.1PT relaxor ferroelectric system were improved by enhencing the extent of the diffuse phase transition(DPT). The maximum dielectric permittivity decreased by substitution $MnO_2$ and the dielectric loss decreased with increasing $MnO_2$ substitution amount. It is expected decreasing in inner heat energy for temperature with increasing $MnO_2$ substitution.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.173-176
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• 1998

We experimentally investigated the dielectric relaxation phenomena of a liquid crystal monolayers by the Displacement current techique and displacement current flowing across monolayers is analyzed using rod-like molecular model. It is revealed that the dielectric reaxation time $\tau$ of monolaters in the isotropic polar orientational phase is determined using a linear relashionship between the monolayers compression speed $\alpha$ and the molecular area. The dielectric relaxation time of phospholipid monolayers was examined on the basis of the analysis developed here.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.107-110
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• 2003

In this paper, We introduced that the method for determing the dielectric relaxation time $\tau$ of floating monolayers on water interface. Displacement current flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$of monolayers in the isotropic polar orientational phase is determined using a linear relationship between the monolayer compression speed $\alpha$ and the molecular area Am. here Displacement current gives a peak at A = Am. The dielectric relaxation time $\tau$ of organic monolayers was examined on the basis of the analysis developed here.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.926-929
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• 2012

The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.1-23
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• 2019

Dielectric materials with inherently high power densities and fast discharge rates are particularly suitable for pulsed power capacitors. The ongoing multifaceted efforts on developing these capacitors are focused on improving their energy density and storage efficiency, as well as ensuring their reliable operation over long periods, including under harsh environments. This review article summarizes the studies that have been conducted to date on the development of high-performance dielectric ceramics for employment in pulsed power capacitors. The energy storage characteristics of various lead-based and lead-free ceramics belonging to linear and nonlinear dielectrics are discussed. Various strategies such as mechanical confinement, self-confinement, core-shell structuring, glass incorporation, chemical modifications, and special sintering routes have been adopted to tailor the electrical properties and energy storage performances of dielectric ceramics. In addition, this review article highlights the challenges and opportunities associated with the development of pulsed power capacitors.