• Transactions on Electrical and Electronic Materials
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• 제11권6호
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• pp.261-265
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• 2010

In this paper, we attempt to improve the electrical characteristics of epoxy resin at high temperature (above $80^{\circ}C$) by adding magnesium oxide (MgO), which has high thermal conductivity. Scanning electron microscopy (SEM) of the dispersion of specimens with added MgO reveals that they are evenly dispersed without concentration. The dielectric breakdown characteristics of $SiO_2$ and MgO nanocomposites are tested by measurements at different temperatures to investigate the filler's effect on the dielectric breakdown characteristics. The dielectric breakdown strength of specimens with added $SiO_2$ decreases slowly below $80^{\circ}C$ (low temperature) but decreases rapidly above $80^{\circ}C$ (high temperature). However, the gradient of the dielectric breakdown strength of specimens with added MgO is slow at both low and high temperatures. The dielectric breakdown strength of specimens with 0.4 wt% $SiO_2$ is the best among the specimens with added $SiO_2$, and that of specimens with 3.0 wt% and 5.0 wt% MgO is the best among those with added MgO. Moreover, the dielectric strength of specimens with 3.0 wt% MgO at high temperatures is approximately 53.3% higher than that of specimens with added $SiO_2$ at $100^{\circ}C$, and that of specimens with 5.0 wt% of MgO is approximately 59.34% higher under the same conditions. The dielectric strength of MgO is believed to be superior to that of $SiO_2$ owing to enhanced thermal radiation because the thermal conductivity rate of MgO (approximately 42 $W/m{\cdot}K$) is approximately 32 times higher than that of $SiO_2$ (approximately 1.3 $W/m{\cdot}K$). We also confirmed that the allowable breakdown strength of specimens with added MgO at $100^{\circ}C$ is within the error range when the breakdown probability of all specimens is 40%. A breakdown probability of up to 40% represents a stable dielectric strength in machinery and apparatus design.

• 조명전기설비학회논문지
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• 제27권1호
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• pp.85-91
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• 2013

This paper studied surface discharge characteristics by a dielectric constant and diameter of solid dielectrics in $N_2/O_2$ mixture gas. Applied electric field strength at $N_2/O_2$ mixture gas was changed from the dielectric constant and diameter of the solid dielectrics, and insulation performance of the $N_2/O_2$ mixture gas determined surface discharge voltage. In each of the diameter at the solid dielectrics, the surface discharge voltage was increased by lengthening surface distance, whereas increasing rate of the surface discharge voltage was different from gas pressure. Thus, In this paper, main factors of surface discharge are as follows. 1) Insulation performance of $N_2/O_2$ mixture gas, 2) Dielectric constant of solid dielectrics, 3) Surface discharge path. It was clear that the surface discharge voltage depend on the main factors. These results will be applied to useful data for an eco-friendly composite insulation design.

• 한국전기전자재료학회논문지
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• 제27권11호
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• pp.730-735
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• 2014

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film which is degradated at the $120^{\circ}C{\sim}200^{\circ}C$ temperature range in the oven for 10 hours has been measured in through the applied frequency range of 0.1 kHz~4,800 kHz at temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Also, in the same conditions, the frequency characteristics of electrostatic capacity and dielectric loss for the sample of Teflon film has been measured in through the applied temperature range of $30^{\circ}C{\sim}70^{\circ}C$ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are as follows. When the frequency range of 0.1 kHz~4,800 kHz applied to the sample of Teflon film, the electrostatic capacity has been measured at the temperature of $50^{\circ}C$, $90^{\circ}C$, $130^{\circ}C$, $170^{\circ}C$. Through this measurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding this result, may be it is because the electromagnetic coupling is degraded by thermal degradation. When the sample of Teflon film heated at $280^{\circ}C$ for 10 hours in oven, the dielectric loss has changed from unstable status to stabilizing status with increasing the degradation temperature in the $120^{\circ}C$, $160^{\circ}C$, $200^{\circ}C$ range. In this measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum of dielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Through this study, It found that the electrostatic capacity decreased with increasing frequency and temperature, and there is no change in dielectric loss, although the frequency increases.

• 조명전기설비학회논문지
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• 제29권8호
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• pp.49-54
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• 2015

Molded Circucit Breaker(MCCB) is a most widely used device to protect loads from the over-current in low power level distribution system. When the MCCB interrupts the over-current, the arc discharge occurred between fixed contact and moving contact to create hot gas. By the Lorentz force due to arc current, the occurred arc is bent to the grids. The grids extend and cool and divide it for arc extinguish. In the majority cases, the MCCB protects loads by interrupting the over-current successfully but in some cases the re-ignition is occurred by hot-gas created during process of interruption. The re-ignition arises when the recovery voltage(RV) is more higher than the recovery strength between contacts and it leads to interruption fault. Therefore to find out the dielectric recovery characteristics of protecting device has a great importance for preventing interruption fault. In this paper, we studies measurement method of the dielectric recovery characteristics considering inherent attribute of the MCCB. To measure the dielectric recovery characteristic of MCCB, we makes an experiment circuit for applying the over-current and the randomly recovery voltage. The measurement methode to find out the dielectric recovery voltage of the MCCB was established and the result was based on experiment results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.388-389
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• 2005

In this paper, the electric properties of mercury Iodide multi-layer samples has been investigated. We measured and analyzed their performance parameters such as the X-ray sensitivity and dark-current for a mercury Iodide multi-layer X-ray detector with a dielectric layer. The digital X-ray image detector can be constructed by integrating photoconduction multi-layer that dielectric layer has characteristics of low dark-current, high X-ray sensitivity. However this process has found to have complexity on the performance of the sample. We have investigate dielectric layer that it substitute dielectric layer for HgO(Mercury Oxide). We have employed two approaches for producing the mercury Iodide sample : 1) Physical Vapor Deposition(PVD) and 2) Particle-In-Binder(PIB). In this paper fabricated by PIB Method with thicknesses ranging from approximately 180um to 240um and we could produce high-quality samples for each technique particular application. As results, the dielectric materials such as HgO between the dielectric layer and the top electrode may reduce the dark-current of the samples. Mercury Iodide multi-layer having HgO has characteristics of low dark-current, high X-ray sensitivity and simple processing. So we can acquired a enhanced signal to noise ratio. In this paper offer the method can reduce the dark-current in the X-ray detector.

• 반도체디스플레이기술학회지
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• 제8권3호
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• 한국방재안전학회논문집
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• 제10권1호
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• pp.61-66
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• 2017

지표투과레이다 탐사에 있어서 지하매질의 전기적 특성 파악은 매우 중요하다. 지하매질의 전기적 특성에 따라 전자기파의 에너지가 상대적으로 작아져 경계면으로부터 반사가 어려워 질수 있다. 이 연구에서는 다양한(느슨하고 조립한) 조건의 모래지반에 대한 전기적 특성을 분석 한 결과, 마른모래에서는 상대밀도가 증가할수록 유전상수는 증가하였으며, 모래의 함수율이 증가할수록 유전상수와 전기전도도의 값은 증가 하였다.

• 정보저장시스템학회논문집
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• 제4권1호
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• pp.13-18
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• 2008

Scratches are observed on a polymer cover-layer of near-field recording (NFR) media after a servo test with rotating disc. The scratches are formed by the collision of a solid immersion lens (SIL)-media. One of the possible ways to avoid the scratch problem is to coat a dielectric protective film on the polymer cover-layer which enhances the hardness of the surface. The surface with hard characteristics in the surface reduces the scratch problem in the cover-layer. Not only the mechanical properties but also the optical properties should be controlled. Specifically, the refractive index of the dielectric protective film should be matched with the polymer cover-layer not to lose light at the interface due to the difference of the refractive index. The refractive index of the dielectric film can be tailored by controlling process parameters during sputtering and matched with that of the polymer cover-layer.

• 한국안전학회지
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• 제6권3호
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• pp.12-20
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• 1991

The dielectric properties that effect to electric safety for unsaturated Pelvester resin were studied over the temperature range of 30-40［$^{\circ}C$］ and the frequency range of 110~3$\times$10$^{6}$ ［Hz］. According to the results of the study, it has been observed that two kinds of dielectric losses in electric safety were existed by the molecular movement of C-H and OH group. When the ,adio of hardener was 1.5［%］, the characteristics of specimens were excellent in view of the electrical materical. In the range of measuring frequency the dielectric constants and the dielectric losses were 3.5~5.5 and 10$^2$~10$^3$ respectly. The activation energy of loss spectrum in aspect of electric safety and the entropy appeared at the 30［$^{\circ}C$］ were 33.4［Kacl/mole］ and 54.9［cal/mole.deg］ respectly.

• 한국안전학회지
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• 제6권4호
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• pp.5-12
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• 1991

The dielectric properties of natural rubbers for electric safety are very important to investigate the molecular structure. The electric safety characteristics of the dielectric absorption in aging vulcanized natural rubber were studied in the range of frequency from 1$\times$10$^3$［Hz］to 3.2$\times$10$^3$［Hz］l at the temperature of 23［$^{\circ}C$］. As the results, it has been confirmed that in the case of aging natural rubber of above 2 phr the specimens exhibit two kinds of dielectric losses due to the dipole polarization by impurities and sulfurs, and of raw rubber exhibit the kind of losses due to the dipole polarization. Rurthermore, dielectric loss maximum tansspectrum in high freguency region for electric safety, which removed to the low freguency according to increasing sulfur, depends greatly on sulfur.