• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권4호
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• 한국정보통신학회논문지
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• 제6권5호
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• pp.689-695
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• 2002

막질의 조성은 공정 개발과 고품질 생산 적용을 위한 반도체 소자의 제조에 있어서 풍요한 요소의 하나 이다. 막의 표면과 계면의 조성은 기본적으로 AES측 통하여 알 수 있다. 본 연구에서는 온도, DCS post flow, shower head life time 등과 같은 공정조건으로 LPCVD법을 이용한 tungsten suicide 박막을 증착하고 이들의 구조적, 전기적 특성과 조성비를 측정하며 WSix박막을 해석하였고 이로부터 Si/W의 조성비를 비교하였다. Si와 W의 조성비는 DCS post flow에 의하여 WSix박막의 표면에서 증가하였으며, 폴리실리콘과 tungsten silicide 계면에서는 온도의 증가에 따라 조성비가 증가함을 알 수 있었다. 이 결과는 메모리 소자 제조의 WSix 박막 증착의 공정조건 최적화에 적용될 수 있다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권9호
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• pp.371-377
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• 2003

We perform the physical analysis such that Si/W composition ratios and phosphorus distribution change in the W/S $i_{x}$ thin films according to phosphorus concentration of polysilicon and W $F_{6}$ flow rate for the formation of WS $i_{x}$ polycide used as a gate electrode. We report that these physical characteristics have effects on the contact resistance between word line and bit line in DRAM devices. RBS measurements show that for the samples having phosphorus concentrations of 4.75 and 6.0${\times}$10$^{2-}$ atoms/㎤ in polysilicon, by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, Si/W composition ratio has increases to 2.05∼2.24 and 2.01∼2.19, respectively. SIMS analysis give that phosphorus concentration of polysilicon for both samples have decreases after annealing, but phosphorus concentration of WS $i_{x}$ thin film has increases by applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm. The contact resistance between word line and bit line in the sample with phosphorus concentration of 6.0 ${\times}$ 10$^{20}$ atoms/㎤ in polysilicon is lower than the sample with 4.75 ${\times}$ 10$^{20}$ atoms/㎤ After applying W $F_{6}$ flow rates decreases from 4.5 to 3.5 sccm, the contact resistance has been improved dramatically from 10.1 to 2.3 $\mu$ $\Omega$-$\textrm{cm}^2$.