• Title/Summary/Keyword: Diaphragm thickness

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Fabrication of a Pressure Difference Type Gas Flow Sensor using ICP-RIE Technology (ICP-RIE 기술을 이용한 차압형 가스유량센서 제작)

  • Lee, Young-Tae;Ahn, Kang-Ho;Kwon, Yong-Taek;Takao, Hidekuni;Ishida, Makoto
    • Journal of the Semiconductor & Display Technology
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    • v.7 no.1
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    • pp.1-5
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    • 2008
  • In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator($SiO_2$) layer of SOI(Si/$SiO_2$/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is $1000{\times}1000{\times}7\;{\mu}m^3$ and overall chip $3000{\times}3000{\times}7\;{\mu}m^3$. We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.

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Role of Bedside Ultrasonography in Assessment of Diaphragm Function as a Predictor of Success of Weaning in Mechanically Ventilated Patients

  • Elshazly, Mostafa Ibrahim;Kamel, Khaled Mahmoud;Elkorashy, Reem Ibrahim;Ismail, Mohamed Said;Ismail, Jumana Hesham;Assal, Hebatallah Hany
    • Tuberculosis and Respiratory Diseases
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    • v.83 no.4
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    • pp.295-302
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    • 2020
  • Background: Weaning failure is common in mechanically ventilated patients, and if ultrasound can predict weaning outcome remains controversial. The purpose of this study was to evaluate the diaphragmatic function (thickness and excursion) measured by ultrasound as a predictor of the extubation outcome. Methods: We included 62 mechanically ventilated patients from the chest intensive care unit in this study. Sixty-two patients who successfully passed the spontaneous breathing trial (SBT) were enrolled. The transthoracic ultrasound of the diaphragm was performed during an SBT to the assess diaphragmatic function (excursion and thickness), and they were classified into the successful extubation group and the failed extubation group. Results: There was a statistically significant increase in the successful extubation group in the diaphragmatic excursion and thickness fraction (p<0.001), a statistically significant negative correlation between the diaphragmatic function and the duration of the mechanical ventilation, and a statistically significant negative correlation between the diaphragmatic excursion and the Acute Physiology and Chronic Health Evaluation II. The diaphragmatic excursion cut-off value predictive of weaning was 1.25 cm, with a specificity of 82.1% and a sensitivity of 97.1% respectively, and the diaphragmatic thickness cut-off value predictive of weaning was 21.5%, with a specificity of 60.7% and a sensitivity of 91.2%, respectively. Conclusion: The diaphragmatic ultrasonography was found to be a promising tool for predicting the extubation outcome for mechanically ventilated patients.

Formation of Silicon Diaphragm Using Silicon-wafer Direct Bonding / Electrochemical Etch-stopping and Its Application to Silicon Pressure Sensor Fabrication (실리콘 직접 접합 / 전기화학적 식각정지를 이용한 실리콘 다이아프램의 형성과 실리콘 압력센서 제조에의 응용)

  • Ju, B.K.;Ha, B.J.;Kim, K.S.;Song, M.H.;Kim, S.H.;Kim, C.J.;Tchah, K.H.;Oh, M.H.
    • Journal of Sensor Science and Technology
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    • v.3 no.3
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    • pp.45-53
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    • 1994
  • A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.

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The Etching Characteristics of TMAH/AP for the Diaphragm Fabrication of Pressure Sensors (압력센서용 다이아프램 제작을 위한 TMAH/AP 식각특성)

  • 윤의중;김좌연
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.4
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    • pp.19-22
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    • 2003
  • In this paper, Si anisotropic etching characteristics of tetramethylammonium hydroxide (TMAH)/ammonium persulfate (AP) solutions were investigated to realize the optimum structure of a diaphragm for the piezoresistive pressure sensor application. Due to its low toxicity and its high compatibility with the CMOS processing, TMAH was used as Si anisotropic etchants. The variations of Si etch rate on the etching temperature, TMAH concentration, and etching time were obtained. With increasing the etching temperature and decreasing TMAH concentrations, the Si etch rate is increased while a significant non-uniformity exists on the etched surface because of formation of hillocks on the <100> surface. With the addition of AP to TMAH solution, the Si etch rate is increased and an improvement in flatness on the etching front is observed. The Si etch rate is also maximized with increasing the number of addition of AP to TMAH solution per one hour. The Si square diaphragms of 20$\mu\textrm{m}$ thickness and 100-400 $\mu\textrm{m}$ one-side length were fabricated successfully by adding AP of (5/6)g to 800 ml TMAH solution every 10 minutes.

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Finite Element Analysis of Air Springs with Fiber-Reinforced Rubber Composites Using 3-D Shell Elements (3차원 셸 요소를 이용한 섬유보강 고무모재 공기 스프링의 유한요소해석)

  • Lee, Hyoung-Wook;Huh, Hoon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.4
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    • pp.602-609
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    • 2001
  • This paper is concerned with the orthotropic problem of diaphragm-type air springs which consist of rubber linings, nylon reinforced rubber composite and bead ring. The analysis is carried out with a finite element method developed to consider the orthotropic properties, geometric nonlinearity using four-node degenerated shell element with reduced integration. Physical stabilization scheme is used to control the zeroenergy mode of the element. The analysis includes an inflation analysis and a lateral analysis of an air spring for the deformed shape and the spring load with respect to the vertical and l ateral deflection. Numerical results demonstrate the variation of the outer diameter, the fold height, the vertical force and the lateral force with respect to the inflation pressure and the lateral deflection.

Diaphragm-Type Pressure Sensor with Cu-Ni Thin Film Strain Gauges-I: Development of Cu-Ni Thin Film Strain Gauges (Cu-Ni 박막 스트레인 게이지를 이용한 다이어프램식 압력 센서-I: Cu-Ni 박막 스트레인 게이지 개발)

  • 민남기;이성래;김정완;조원기
    • Electrical & Electronic Materials
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    • v.10 no.9
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    • pp.938-944
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    • 1997
  • Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

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Finite Element Analysis of Capctive Silicon Pressure Sensors (용량형 실리콘 압력 센서의 유한요소 해석)

  • Roh, Yong-Ae
    • The Journal of the Acoustical Society of Korea
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    • v.14 no.2E
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    • pp.12-18
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    • 1995
  • Capactive miro pressure sensor is simulated with finite element methods to analyze the effect of geometrical variation on its performace. Sensor material is th silicon single crystal. The sensor consists of a disk type diaphragm and several bridges connected to a rigid frame. Structural variables in consideration are the thickness of the diaphragm and the bridges, radius of the circular plate, and the number of bridges. Results of static, dynamic and sensitivity analyses reveal the best structure of the sensor among the fifteen cases under investigation.

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Application of Electrochemical Etch-stop in TMAH/IPA/pyrazine Solution to Pressure Sensors (TMAH/IPA/pyrazine용액에 있어서 전기화학적 식각정지법의 압력센서에의 응용)

  • 박진성;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.423-426
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    • 1998
  • Piezoresistive pressure sensors have fabricated using electrochemical etch-stop technique. Si diaphragm having thickness of n-epi. layer was fabricated and used to detect pressure range from 0 to 1 kg/$\textrm{cm}^2$. Piezoresistors were diffused 3${\times}$10$\^$18/ cm$\^$-3/ and placed at diaphragm edge for maximum pressure detection. The characteristics of electrochemical etch-stop in TMAH/lPA/pyrazine solution were also discussed. I-V curves of n and p-type Si in TMAH/lPA/pyrazine solution were obtained. Etching rate is highest at optimum etching condition, TMAH 25wt.%/IPA 17vo1.%/pyrazine 0.1/100m1, thus the elapsed time of etch-stop was reduced.

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Silicon Strain Gauge Load Cell for Weighting Disdrometer

  • Lee, Seon-Gil;Moon, Young-Soon;Son, Won-Ho;Sohn, Young-Ho;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.22 no.5
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    • pp.321-326
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    • 2013
  • In this paper, the usability of a compact silicon strain gauge load cell in a weighting disdrometer for measuring the impact load of a falling raindrop is introduced for application in a multi-meteorological sensor. The silicon strain gauge load cell is based on the piezoresistive effect, which has a high linearity output from the momentum of the raindrop and the simplicity of signal processing. The weighting disdrometer shows a high sensitivity of 7.8 mV/g in static load measurement when the diaphragm thickness of the load cell is $250{\mu}m$.