• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.760-763
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• 2004

We studied the nematic liquid crystaL(NLC) aligning capabilities using the new alignment material of a nitrogenated diamond-like carbon(NDLC) thin film. The NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about 9.9$^{\circ}$ by ion beam(IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin films surface at annealing temperature of 200 $^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of 250 $^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.25-34
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• 2003

Deposition behavior of hard amorphous carbon film was investigated by molecular dynamic simulation using Tersoff potential which was suggested for the interaction potential between carbon atoms. When high energy carbon atoms were collided on diamond (100) surface, dense amorphous carbon film could be obtained. Physical properties of the simulated carbon film were compared with those of the film deposited by filtered cathodic arc process. As in the experimental result, the most diamond-like film was obtained at an optimum kinetic energy of the incident carbon atoms. The optimum kinetic energy was 50 eV, which is comparable to the experimental observation. The simulated film was amorphous with short range order of diamond lattice. At the optimum kinetic energy condition, we found that significant amount of carbon atom were placed at a metastable site of distance 2.1 $\AA$. By melting and quenching simulation of diamond lattice, it was shown that this metastatic peak is Proportional to the quenching rate. These results show that the hard and dense diamond-like film could be obtained when the localized thermal spike due to the collision of high energy carbon atom can be effectively dissipated to the lattice.

• Corrosion Science and Technology
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• v.4 no.6
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• pp.226-230
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• 2005

Si incorporated diamond-like carbon (Si-DLC) films ranging from 0 to 2 at.% contents were deposited on STS 316L substrates for orthopedic implants by means of r.f. plasma-assisted chemical vapor deposition (r.f. PACVD) technique, using mixtures of benzene ($C_6H_6$) and silane ($SiH_4$) as the precursor gases. This study provides the reliable and quantitative data for assessment of the effect of Si incorporation on corrosion property in the simulated body fluid environment through the electrochemical test. It was found that corrosion to resistance of Si-DLC coatings with increasing Si content are improved owing to high $sp^3$ bonding.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.403-409
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• 1999

We fabricated diamond like carbon (DLC) thin films using pulsed laser deposition (PLD) method. Among many deposition parameters, the effects of the deposition temperature and the laser energy density were investigated. Structural properties of the films were studied by Raman spectroscopy. The surface morphologies and cross-section imagies of the films were investigated by atomic force microscopy (AFM) and scanning electron microscopy (SEM) respctively. DLC thin films fabricated at $12 J/cm^2$ of a laser energy density and $300^{\circ}C$ of a deposition temperature showed the best quality.

• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.1-5
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• 2002

Alignment effects for nematic liquid crystal (NLC) and electro-optical (EO) characteristics of the ion beam (IB) aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the diamond-like carbon (DLC) thin film surface were studied. A high pretilt angle of 3.5$^{\circ}$ in NLC by ion beam exposure on the DLC thin film layer can be measured. An excellent voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for 1 min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.9-14
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• 1998

Diamond-like carbon(DLC) films were deposited on buffer-layered ZnS substrates by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Ge and GeC buffer layera were used between DLC and ZnS substrates to promote the adhesion of DLC on ZnS substrates. Ge buffer layers were sputter deposited by RF magnetron sputtering and $GeC^1$ buffer layers were deposited by same method except using acetylene reactive gas. The relatinship between film properties and deposition conditions was investigated using gas pressure, RF power and dc bias voltage as PECVD parameters. The hardness of DLC films were measured by micro Vickers hardness test and the adhesion of DLC films on buffer-layered ZnS substrates were studied by Sebastian V stud pull tester. The optical properties of DLC films on butter-layered ZnS substrates were characterized by ellipsometer and FTIR spectroscopy.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1999.11a
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• pp.42-48
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• 1999

An experimental study was performed to discover the effect of environment on the tribological behavior of Si-incorporated diamond-like carbon(Si-DLC) film slid on a steel ball. The films were deposited on Si(100) wafers from radio-frequency glow discharge of mixtures of benzene and dilute silane gases. Experiments using a ball-on-disk test-rig was performed under vacuum, dry air and ambient air conditions. It was observed that coefficient of friction was decreased as the environmental condition changes from vacuum, to dry air. It was also observed that the coefficient of friction decreased with increasing silicon concentration in the film. Chemical analyses of debris suggested that the low and stable friction coefficient is closely related to the silicon rich oxide debris and the rolling action.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1010-1013
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• 2006

Hydrogenated Diamond-like carbon (DLC) films were Prepared by the radio frequency plasma enhanced chemical vapor deposition (RF PECVD) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas for the application to solid lubricant of MEMS devices. We have checked the influence of varying RF power on tribological properties of DLC film. We have checked their performance as two kinds of method such as FFM (Friction Force Microscope) and BOD (Ball-on Disk) measurement. The friction coefficients and the contact number of cycles to steady state decreased as the increase of RF power with FFM and BOD measurement, respectively.

• Journal of Industrial Technology
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• v.32 no.A
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• pp.119-123
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• 2012

Diamond-like carbon(DLC) thin films with interlayer were deposited on silicon substrate using a reactive sputtering method. The thermal stability of the films was investigated by annealing the films for 1hr in air in the range of 100 to $500^{\circ}C$. The $I_D/I_G$ ratio increased with increasing temperature as related to the $sp^3-to-sp^2$transition. Accordingly, G-position shifting started from $150^{\circ}C$ in the DLC films and from $270^{\circ}C$ in the a-Si/DLC films. Moreover, in the case of the a-Si/DLC films the film still observed even after annealing at $500^{\circ}C$. The thermal stability of the reactive sputtered DLC films appeared to be improved by the a-Si interlayer.